PTFA241301F Search Results

PTFA241301F Datasheets (3)

Filter by Manufacturer

Infineon Technologies

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
PTFA241301F		Infineon Technologies	2400 MHz to 2700 MHz; Package: PG: H-31260-2; Flange Type: Earless; Matching: I/O; Frequency Band: 2,420.0 - 2,480.0 MHz; P_1dB (typ): 130.0 W; Supply Voltage: 28.0 V;	Original	PDF	241.07KB	12
PTFA241301FV1		Infineon Technologies	RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 130W H-30260-2	Original	PDF		12
PTFA241301F V1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 130W H-30260-2	Original	PDF	243.06KB

PTFA241301F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA, CDMA2000,	Original	PTFA241301E PTFA241301F 130-watt, CDMA2000, H-30260-2 H-31260-2	PDF
Contextual Info: PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA and CDMA2000	Original	PTFA241301E PTFA241301F 130-watt, CDMA2000 PTFA241301F*	PDF
PTFA241301F Abstract: PTFA241301E LM7805 BCP56 A241301e H-30260-2 Contextual Info: PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA, CDMA2000,	Original	PTFA241301E PTFA241301F PTFA241301E PTFA241301F 130-watt, CDMA2000, CDMA2000 LM7805 BCP56 A241301e H-30260-2	PDF
PG-DSO-20 Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M Contextual Info: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test	Original	PG-DSO-20 PG-RFP-10 H-34265-8 H-33265-8 H-30248-2 H-36248-2 H-33288-2 H-31248-2 H-37248-2 H-34288-2 PG-DSO-20 a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M	PDF
PTFB182503FL Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503 Contextual Info: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production	Original	PTFA041501E PTFA041501F PG-DSO-20-63 PG-RFP-10 H-33265-8 H-34265-8 H-30260-2 H-36260-2 H-30265-2 H-30248-2 PTFB182503FL PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503	PDF