PT88 Search Results

PT880

Abstract: AGP Host to PCI Bridge CY28326
Contextual Info: CY28326 FTG for VIA PT880 Serial Chipset Features • • • • • • Supports P4 CPUs 3.3V power supply Ten copies of PCI clocks One 48 MHz USB clock Two copies of 25 MHz for SRC/LAN clocks One 48 MHz/24 MHz programmable SIO clock • Three differential CPU clock pairs

Contextual Info: MP88-PT88 Lo-Henry Metallized Polypropylene and Polypropylene & Foil Constructions Snubber capacitors - Key dual element design with no internal wires lowers inductance up to 70%, with higher reliability. ESR as low as 0.0019OHMS; less than 15nH; ripple current to 46.2amps; dv/dt to 13,174v/µs.

6ae diode

Abstract: 2NS773 2SC971 b0173 KT807AM KT934A KT934 MRF8003 kt807 MSP100
Contextual Info: POWER SILICON NPN Item Number Part Number I C S 10 20 2N10S0 2N1613A 2NS914 PT8890 PT8871 PT8871A MRF402 MRF402 ~~~~~~ 2S 30 2NS687 2NS688 2N2234 2N2234 2N2234 2NS710 2N6206 2N6206 ~~~~g~ 35 40 2N1092 MRF8003 2SC971 2N6202 2N6202 2N6202 2NS773 TIP61 ~g~~~~:~

Contextual Info: MP88-PT88 Lo-Henry Metallized Polypropylene and Polypropylene & Foil constructions Snubber capacitors - Key dual element design with no internal wires lowers inductance up to 70%, with higher reliabilty. ESR as low as 0.0019OHMS; less

Ferroxcube core

Abstract: PT8864 PT8864A VK21107-3B C3-250
Contextual Info: 15E O I fc,3b72S4 000013^ S I MO TOR OLA SC MOTOROLA r- XSTRS/R F SEMICONDUCTOR TECHNICAL DATA PT8864 PT8864A The RF Line NPN Silicon VHF Pow er Transistors . . . designed for 12,5 Volt, mid-band large-signal amplifier applications in industrial and com m ercial FM equipm ent operating in the 40 to 100 MHz range.

MP 1007

Contextual Info: MP88-PT88 Lo-Henry Metallized Polypropylene and Polypropylene & Foil constructions Snubber capacitors - Key dual element design with no internal wires lowers inductance up to 70%, with higher reliability. ESR as low as 0.0019OHMS; less than 15nH; ripple current to 46.2amps; dv/dt to 13,174v/µs.

VK211-073B

Abstract: PT8852 PT8852A CASE211-07
Contextual Info: 12E D I MOTOROLA b3t.72S4 0DÛÛ133 4 | MOTORCLA SC X S T R S /R -f-5 3 -jJ F SE M IC O N D U C T O R TECHNICAL DATA PT8852 PT8852A The RF Line V H F P o w e r T r a n s isto rs . .de signed for 12.5 Volt low band VH F large-signal power amplifier applications in

Contextual Info: MP88-PT88 Lo-Henry Metallized Polypropylene and Polypropylene & Foil constructions Snubber capacitors - Key dual element design with no internal wires lowers inductance up to 70%, with higher reliability. ESR as low as 0.0019OHMS; less than 15nH; ripple current to 46.2amps; dv/dt to 13,174v/µs.

Contextual Info: MP88-PT88 Lo-Henry Metallized Polypropylene and Polypropylene & Foil constructions Snubber capacitors - Key dual element design with no internal wires lowers inductance up to 70%, with higher reliabilty. ESR as low as 0.0019OHMS; less

PT9847

Abstract: ESM752A ESM952 sm2160 ESM952A PT9785 esm752 idd1313
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max hFE fT ON) Min (HZ) Max toN Max (A) (s) 'CBO r (CE)sat Toper Max (Ohms) Max (°C) Package Style ~ Devices 20 Watts or More, (Cont'd) 5 10 PT8854 PT8854A S G S F 6 6 2 (A)

PT8809

Abstract: PT8809A 244c-01
Contextual Info: 1EE D I Qüflaia? 1 I b3b?ES4 MOTOROLA SC XSTRS/R F MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA PT8809A A dvance Inform ation The RF Line U H F P o w e r T ra n sisto r 2 W — 470 MHz UHF POW ER T RAN SIST O R . designed for 12.5 Volt UHF large-signal amplifier applications in industrial and com­

PT8810

Abstract: case 244c-01 7-V2004 transistor Pout 5W
Contextual Info: 12E D I b3b?2SM GOôôieT 2 I " MOTORCLA SC XSTRS/R F T'33-1| MOTOROLA SEMICONDUCTOR TECHNICAL DATA PT8810 Advance Information The RF Line UHF P o w er T ran sisto r 5 W — 470 MHz UHF POWER TRANSISTOR . . . designed for 12.5 Volt UHF large-signal amplifier applications in industrial and com­

MP88-PT88

Contextual Info: MP88-PT88 Lo-Henry Metallized Polypropylene and Polypropylene & Foil constructions Snubber capacitors - Key dual element design with no internal wires lowers inductance up to 70%, with higher reliability. ESR as low as 0.0019OHMS; less than 15nH; ripple current to 46.2amps; dv/dt to 13,174v/µs.

KT704

Abstract: MJ8501 2S0200 BU205 HITACHI 2sc935 MJE132 KT704A MJE1320 TIPL770 PT8851A
Contextual Info: POWER SILICON NPN Item Number Part Number >= I C 20 PT8851A MRF262 S01014•6 2N6081 MRF433 NA41UX NA41UG NA41UH ~~:~~r 25 30 2N6198 2N6198 2N6198 2S01077 2N2339 2N1701 2N6391 2N6391 ~~~J85 35 40 BLY15 BOY16 BOY16 MM3006 MM3007 2N4272 2N4273 2N6477 ~~~~~5

PT8811A

Contextual Info: 1SE D I b3b?2SM QDÖÖ131 0 | MO TOROLA SC MOTOROLA T-33-U XSTRS/R F SE M IC O N D U C T O R TECHNICAL DATA PT8811A Advance Information The RF Line U H F P o w e r T ra n sisto r 1 0 W — 470 MHz UHF POW ER T RAN SIST O R . designed for 12.5 Volt UHF large-signal amplifier applications in industrial and com­

PT880

Abstract: CY28326
Contextual Info: CY28326 FTG for VIA PT880 Serial Chipset Features • • • • • • Supports P4 CPUs 3.3V power supply Ten copies of PCI clocks One 48 MHz USB clock Two copies of 25 MHz for SRC/LAN clocks One 48 MHz/24 MHz programmable SIO clock • Three differential CPU clock pairs

FS DMO 365 RN

Abstract: mxj A1 connector LS 2027 audio amp MA81C WDA42 lx4 d09 st3pc 13T4 0601N D1661
Contextual Info: Model : F17P R:1 Intel Pentium 4 LGA775 +PT880+VIA8235 C E PCB STACK UP LAY1 LAY 2 LAY 3 LAY 4 LAY 5 LAY 6 LAY 7 LAY 8 LAY 9 LAY10 TOP GND INI IN2 GND1 VCC IN3 IN4 GND2 BOTTOM Revision History A O R IG IN A L RE LEA SE fe . cCL V?, o . ^ •Pff' j L

Contextual Info: LO-HEIMRY 88 SERIES snubber capacitors MP88 PT88 m e ta llize d p o lyp ro p ylen e p o lyp ro p ylen e & foil SUPERIOR ‘PRICE/PERFORMANCE" ALTERNATIVES FOR ACROSS-THE-BUSS POWER APPLICATIONS O ’ The LO -H E N R Y’ " 88 SER IES fills a critical need in the m arketplace fo r a "cost-effective" snubber

Contextual Info: PT8861 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)16 V(BR)CBO (V)36 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10mx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

CY28326

Abstract: PT880
Contextual Info: CY28326 FTG for VIA PT880 Serial Chipset Features • Supports P4 CPUs • Three differential CPU clock pairs • 3.3V power supply • Ten copies of PCI clocks • SMBus support with Byte Write/Block Read/Write capabilities • One 48 MHz USB clock • Spread Spectrum EMI reduction

PT8853A

Abstract: PT8853 145D-01
Contextual Info: 1EE D § fci3b7254 DOßölBb T | MOT OROL A SC XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA PT8853 PT8853A The RF Line VHF Pow er Transistors ,. designed for 12.5 Volt low band VH F large-signal power amplifier applications in commercial and industrial FM equipment.

Contextual Info: MP88-PT88 Lo-Henry Metallized Polypropylene and Polypropylene & Foil constructions Snubber capacitors - Key dual element design with no internal wires lowers inductance up to 70%, with higher reliability. ESR as low as 0.0019OHMS; less than 15nH; ripple current to 46.2amps; dv/dt to 13,174v/µs.

PT8874A

Abstract: is1145 PT8874
Contextual Info: 12E 0 I b3b?2S4 QDÛfllMl 3 | M O T OR OLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA PT8874 PT8874A The RF Line VHF Pow er Transistors . . . de sign ed for 12.5 Volt large-signal pow er am plifiers in com m ercial and industrial equipment. 5.2 d B

mosfet 2807

Abstract: pt8822
Contextual Info: PT8822 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS ON , Vgs@1.8V, Ids@2A = 50mΩ RDS(ON), Vgs@2.5V, Ids@5.5A = 32mΩ RDS(ON), Vgs@4.5V, Ids@6.6A = 24mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance