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mosfet 2807 Abstract: pt8822 Contextual Info: PT8822 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS ON , Vgs@1.8V, Ids@2A = 50mΩ RDS(ON), Vgs@2.5V, Ids@5.5A = 32mΩ RDS(ON), Vgs@4.5V, Ids@6.6A = 24mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance	Original	pt8822 300us mosfet 2807	PDF

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mosfet 2807

Abstract: pt8822
Contextual Info: PT8822 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS ON , Vgs@1.8V, Ids@2A = 50mΩ RDS(ON), Vgs@2.5V, Ids@5.5A = 32mΩ RDS(ON), Vgs@4.5V, Ids@6.6A = 24mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance

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pt8822 300us mosfet 2807

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