PT372 Search Results

Contextual Info: SHARP PT370/ PT371/PT372 PT370/PT371 PT372 Compact, Stem Type Phototransistor • Features ■ Oulflne Dimensions U nit : m m 1. <£3mm com pact, resin stem type 2. A cceptance PT370 A O '. TY P. ±45° PT371 A 6 : T Y P. ± 65” PT372 A 6 : T Y P. ±70°

PT370

Abstract: PT371 PT372 c 4161
Contextual Info: SH ARP ELEK/ M ELEC D IV 15E D I f l i a G 7 t1à Q Q Q 2 ?5 a M Phototransistors T370/PT371/PT372 PT370/PT371/PT372 S • 1. 2. '3. ■ F e a tu re s ■ Ä A p p lica tio n s optoelectronic T a=25’C A bso lu te M axim um R a tin g s P aram eter C ollector-em itter voltage

Contextual Info: PT370/PT371/PT372 SHARP Com pact, Stem Type Phototransistor P T 370/P T 371 PT372 • Features 1. <£3mm compact, resin stem type 2. Acceptance PT370 A 0: TYP. ±45° PT371 A e: TYP. ±65” PT372 A 6: TYP. ±70“ 3. Single phototransistor o u tp u t: PT370/PT371

PT370

Abstract: PT371 PT372
Contextual Info: PT370/PT371/PT372 Compact, Stem ~pe Phototran~tor PT370/PT371 PT372 Unit : mm Faatures 1. d 3mm compact, resin stem type 2. Acceptance PT370 A 8: TYP. f4Y PT371 AO : TYP. i6T PT372 A 0: TYP. f 7W 3. Single phototransistor output : PT370/PT371 Darlington phototransistor output : PT372

PAKAGE 5PIN SMD

Abstract: SPC817 PC8052 PC113 SHARP P1S29 S22MD1V "cross reference" PC817AC GL528V GP1U78R 664 6-pin sensor
Contextual Info: SHARP Quick Reference Guide Quick Reference Guide • Infrared Emitting Diodes Features Metal Outline mm Oramic Resin BastM old <f>3 ()53.2 GL360 Com pact QL371 Com pact o GL372 Com pact GL380 C om pact H ig h o u tp u t C om pact H ig h o u tp u t Arch type package

S202DS2

Abstract: S202DS4 S102DS2 SHARP S202DS4 s201s01 SHARP S201S02 s201s02 S202DS4 SHARP IS1621 pc111ys
Contextual Info: Obsolete Optoelectronics Products and Replacement Part Numbers Subcategory Model SHARP Replacement Part Detector BS100D BR100C Detector BS100G1 BR100C Detector BS120R BR120 Detector BS521 BR520 Detector GA100T802MZ GA100T802MZ1 Detector GA100T8R1MZ GA100T8R2MZ

PC923 equivalent

Abstract: ST ZO 103 TRIAC triac zo 109 ma triac ZO 109 st triac ZO 109 PC922 equivalent S202S02 application S216S02 Application note PC851 equivalent TRIAC ZO 103 MA
Contextual Info: General Description of Optoelectronic Devices 2-1 General Description of Optoelectronic Devices 2-1-1 Infrared Emitting Diode LED * 1-24 , =— (1 ) Operating principle The infrared L E D utilizes the PN junction of gallium arsenide (G aA s) crystals.

PT36

Abstract: PT4110 PT493 PT361 PT361F PT370 PT371 PT372 PT380 PT380F
Contextual Info: - ft ^ £ it it fc M, ^ -T' — 7" ¥ Ö'j W 3^77-x; ft. M iO iifâ iX = 2 5 ‘C n a l& w m 'i Ev lx VCE (V> Id max ¡¡A Vcic (Vi E sat max \’ m\Y cnr E r •lx) / c: f.mAi k S k I,. E min mA m\V cnv PT361 ■ % Bi m i t :<fi # t, Ap u typ -nm typ '/¿s1 imA'1

gp1u58x

Abstract: pc906 PC12KI PT4800 PC111L 1 928 403 736 PC101 SHARP GL453 PC8520 PC849 SHARP
Contextual Info: SHARP Model No. List Model No. List Model No. Page • PIN Photodiodes Model No. ■ Phototransistors Page Model No. Page GL360 116 PD49PI GL371 119 PD410PI GL372 119 PD412PI G L380 122 PD480PI 178 PT461F 234 GL381 122 PD480PI1 178 PT465F 234 PD481PI 170 PT480