PT 4001 Search Results

D4148

Abstract: OA91 OA91 DIODES oa47 diode in4007 IN 4004 diodes OA47 OA79 IN 4007 OA90 diode
Contextual Info: Diodes and Rectifiers M in ia tu re D iod es in glass package M ax im u m ratings Case D 03 D3 O A 91 O A 90 O A 47 O A 79 IN 4148 D 59 D542 D 4148 C o n s tru c tio n y RM V Pt. C o n ta c t Ge Pt. C o n ta c t Ge G o ld B onded Ge Pt. C o n ta ct Ge Si_ D iffused_

2sc9014

Abstract: SS9015 2Sc9014+equivalent
Contextual Info: Transistors 2SC9014 USHA INDIA LTD PRE-AMPLIFIER, LOW LEVEL & LOW NOISE • High total power dissipation. (PT=450mW) •High hFE and good linearity • Complementary to SS9015 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage

Contextual Info: PJ2N9015 PNP Epitaxial Silicon Transistor PRE-APLIFIER, LOW LEVEL&LOW NOISE • High total power dissipation PT=450mW • High hFE and good linearity • Complementary to PJ2N9014 TO-92 SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Symbol Rating

transistor ss9014

Abstract: ss9014 SS9014 equivalent SS9015 transistor SS9015
Contextual Info: SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE TO-92 • High total power dissipation. PT=450mW • High hFE and good linearity • Complementary to SS9015 Î) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Symbol Collector-Base Voltage

4002T

Abstract: 4004T 4008T 4001T 4006T DBF81
Contextual Info: KBPC40005T THRU KBPC4010T Birdge Rectifier YENYO Voltage Range 50 to 1000 V Current 40.0 Ampere Features ¬ Plastic package has Underwriters KBPC-PT Laboratory Flammability Classification 94V-0 Metal Heat Sink ¬ High surge current capability ¬ Ideal for printed circuit boards

SS9014

Contextual Info: SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE TO-92 • High total power dissipation. PT=450mW • High hFE and good linearity • Complementary to SS9015 ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Symbol Collector-Base Voltage

transistor 33

Abstract: PJ2N9014CX PJ2N9014 PJ2N9014CT PJ2N9015 NPN 100A high gain low voltage NPN transistor sot23 pt45
Contextual Info: PJ2N9014 NPN Epitaxial Silicon Transistor PRE-APLIFIER, LOW LEVEL&LOW NOISE • High total power dissipation PT=450mW • High hFE and good linearity • Complementary to PJ2N9015 TO-92 SOT-23 ABSOLUTE MAXIMUM RATINGS (T a= 25 °C ) Rating Symbol Value Uint

Contextual Info: PJ2N9014 NPN Epitaxial Silicon Transistor PRE-APLIFIER, LOW LEVEL&LOW NOISE • High total power dissipation PT=450mW • High hFE and good linearity • Complementary to PJ2N9015 TO-92 SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta= 25 °C) Rating Symbol Value Uint

SS9014

Contextual Info: SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE TO-92 • High total power dissipation. PT=450mW • High hFE and good linearity • Complementary to SS9015 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol Collector-Base Voltage

Contextual Info: Transmitters: ST130 Series ST131 RTD input head-mount transmitter INPUT CONNECTIONS USB Configured DIMENSIONS Dimensions in millimeters inches INPUT TERMINALS PT RTD OR RESISTANCE 4-WIRE 3-WIRE 2-WIRE IN – 3 4 Ø T2 2 + IN 1 USB 33.00 (1.299) – 3 T3

PJ2N9014

Abstract: PJ2N9015 PJ2N9015CT PJ2N9015CX
Contextual Info: PJ2N9015 PNP Epitaxial Silicon Transistor PRE-APLIFIER, LOW LEVEL&LOW NOISE • High total power dissipation PT=450mW • High hFE and good linearity • Complementary to PJ2N9014 TO-92 SOT-23 ABSOLUTE MAXIMUM RATINGS (T a= 25 °C ) Symbol Rating Uint Collector Base Voltage

Contextual Info: FLLIOIME L-Bcind Medium & High Power GaAs FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs •5 V 4.16 w Total Power Dissipation Pt Tc = 25°C Storage Temperature

Contextual Info: SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE T O -9 2 • High total pow er dissipation. PT=450mW • High hpE and good linearity • C om plem entary to S S 9015 ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol

2ss9014

Abstract: ss8015 A 671 transistor SS9013 SS9014 U007 transistor ss9014 SS9012 T-31-21 50nr
Contextual Info: IM E D SAMSUNG SEM ICONDUCTOR . INC I 7*^4142 " SS9012 4 I 00073*1 T - f i ~ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • High total power dissipation: PT=825mW High Collector Current. (Ic = -500mA) Complementary to SS9013

D40D5

Abstract: D40D7...8 D4001 D4102 tab ic D40D1 D40D2 D40D3 D40D4 D40D7
Contextual Info: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2

Contextual Info: PJ2N9014 NPN Epitaxial Silicon Transistor PRE-APLIFIER, LOWLEVEL&LOWNOISE • High total power dissipation PT=450mW • High hFE and good linearity • Complementary to PJ2N9015 TO-92 B ♦ A B SO L U T E M A X IM U M R A T IN G S (Ta= 25 °C) Symbol Rating

SR50CH50

Abstract: R502 sr50ch-50 R602 A177 A187 R503 FD250CH D0017t
Contextual Info: 72 94 62 1 POWEREX INC 75^41,51 00017t,3 1 7.1 Fast Recovery Rectifiers lF AV 5 OVo Duty Cycle, Half Sine 1KHz (Amps) 1.4 Tc = 65°C 50t Tc = 86°C 50t Tc = 86°C Pt Irrm for @ Vrru iFSH Fusing and TJ(Mbx) @ 8.3 ms (Amps) 50 Hz 60 Hz (A2sec x 10*) (mA) m

Contextual Info: PJ2N9015 PNP Epitaxial Silicon Transistor PRE-APLIFIER, LOWLEVEL&LOWNOISE • High total power dissipation PT=450mW • High hFE and good linearity • Complementary to PJ2N9014 TO-92 A B SO L U T E M A X IM U M R A T IN G S (Ta= 25°C) B • Symbol Rating

Contextual Info: 7294621 POWEREX INC Fast Recovery Rectifiers /ARM Pt fF AV @ Vrrm for Duty and Ifsm Fusing Cycle, Half @ 8.3 ms Tj(Uax) Sine 1KHz (Amps x 103) (Amps) 50 Hz 60 Hz (A*sec x 10*) (mA) 50% 250 Tc = 82°C 250 Tc=73°C 300 Tc=74°C 300 Tc=74°C 300 Tc = 74eC 400

MA208

Contextual Info: T OSHIBA { DI SC RE TE /O PT O} 9097250 T O S H IB A "5b »iJj'iQTTaSO 000700t, O 5öL D IS C R E T E /O P T O 07 8 0 6 O T - 3 A - J I SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit in mm COLOR TV HORIZONTAL OUTPUT APPLICATIONS. 025ÛMÀX. FEATURES: 0'21OMAX.

Contextual Info: 05 AM S/UNI 9953 ASSP Telecom Standard Product Data Sheet Released y, 14 Se pt em S/UNI® 9953 be r, 20 04 07 :1 2: PM5390 Data Sheet Proprietary and Confidential Released Issue 8 : March 2003 Do wn lo ad ed by Co nt e nt Te a m of P ar tm in er In co n

Contextual Info: IF-D92 P la st ic F iber O pt ic P h o t o t r a n sist o r DESCRIPTION The IF-D92 is a phototransistor in Industrial Fiber Optics’ family of low-cost, medium-frequency, short-distance fiber optic emitters and detectors. Each device consists of a PVC housing which retains the internal active element

fd500gv

Abstract: R603 FD500 Powerex r72 A397 A398 A432 DO-200AA R602 R622
Contextual Info: 7294621 POWEREX INC DDD17tiS S f~7~'~£> 3~z3 ß F J 72^4^21 Fast Recovery Rectifiers fF AV 5 0 % Duty Cycle, H alf Sine 1KHz (Amps) /ARM Pt @ Vrrm fo r and Ifsm Fusing Tj(U ax) @ 8.3 ms (Am ps x 103) (mA) 50 Hz 60 Hz (A*sec x 10*) Vr r m Range (Volts) Vfm @

Contextual Info: TOSHIBA { DI SCRE TE /O PT O} 9097250 TOSHIBA 5h DISCRETE/OPTO 56C DE I ^ D T T S S D 00D7Ö3G 07830 O T - 3 3 - / / 2SD870 SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit in ram COLOR TV H O R I Z O N T A L OUTPUT A P P L I C A T I O N S . 085OMAX. 081.OMAX