PSPICE MODEL LIST TRANSISTOR Search Results

PSPICE Orcad

Abstract: ORCAD BD48G BD49 ORCAD PSPICE BOOK BD45 BD46 BD48 BD52 BD53
Contextual Info: SPICE Models: ROHM Voltage Detector ICs BD48□□G/FVE,BD49□□G/FVE,BD52□□G/FVE,BD53□□G/FVE, BD45□□□G,BD46□□□G,BU48□□G/FVE/F,BU49□□G/FVE/F, BU42□□G/FVE/F,BU43□□G/FVE/F,BD47□□G 1. No.10006EAY01 INTRODUCTION 1.1 SPICE

AN9321

Abstract: AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 TB334 F1S45N06
Contextual Info: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet January 2002 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

fd3055

Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

TC227

Abstract: irfu9220 IF9220 IRFR9220 TB334
Contextual Info: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching

TC227

Contextual Info: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching

FD3055

Abstract: IS433 Fp3055 RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

Contextual Info: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet Title FG4 06, P45 6, 1S4 06S bt A, V, 28 m, anwer OSTs utho July 1999 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

FD3055

Abstract: fp3055 TA49082 IS433 RFD3055
Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

Contextual Info: HRF3205, HRF3205S Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

HRF3205 equivalent

Abstract: HRF3205ST TB334 HRF3205 HRF3205S
Contextual Info: HRF3205, HRF3205S Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

AN9321

Abstract: AN9322 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334
Contextual Info: RFD3N08L, RFD3N08LSM Data Sheet 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs Features • 3A, 80V The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving

AN9322

Abstract: AN9321 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334
Contextual Info: RFD3N08L, RFD3N08LSM Data Sheet Title FD3 8L, D3 8LS bt A, V, 00 m, gic vel, Cha el wer OSTs utho July 1999 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs Features The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors

HRF3205 equivalent

Abstract: HRF3205 equivalent mosfet number DATASHEET hrf3205 HRF3205 data sheet mosfet HRF3205 HRF3205S HRF3205ST TB334
Contextual Info: HRF3205, HRF3205S Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

FD3055

Abstract: Fp3055
Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet Title FD3 5, D30 SM, P30 bt A, V, 50 m, anwer OSTs utho eyrds terrpoon, July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

transformer-less AC-DC converter

Abstract: SLAC audio compression transmission line model orcad pspice *74AS* spice models am79231 AMD AM3 Processor Functional AMD SLIC Am79202/03 PSPICE breakout 486DX
Contextual Info: WinSLAC Software User’s Guide 1999 The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make

TDA 9599 h

Abstract: TDA 9599 5101D3 tda 9567 TDA16822 siemens logo application examples STR F 9208 L simulation flyback converter TDA 9567 equivalent tda 4605 application note
Contextual Info: Version 1.0 , June 2001 Application Note AN-PSM-11 Switched and Averaged PSPICE Models Authors: Horst Edel Daniel Lindenmeyer Published by Infineon Technologies AG www.infineon.com/simulate www.infineon.com/coolset Support: simulate@infineon.com Power Management & Supply

SX3002

Abstract: NE555L ac DC supplies MEAN WELL schematic DIP28 DIP40 schematic diagram atom resistor hv pspice model list transistor block diagram the project automatic room power sx2005
Contextual Info: AsicAtoms User Manual January 28, 2005 Copyright 2005 Sigenics Inc. Page 1 Table of Contents Introduction . 3 “Installing” AsicAtoms . 4

f10p03l

Abstract: 10P03L 10p03 Logic Level p-Channel Power MOSFET TA49205 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L n097
Contextual Info: RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet January 2002 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET Features These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,

03n06

Abstract: MOSFET 60V 210A 03N06C RLD03N06CLE RLD03N06CLESM RLD03N06CLESM9A RLP03N06CLE TB334 65E6
Contextual Info: RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Data Sheet January 2002 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs Features • 0.30A, 60V These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener

RFG75N05E

Abstract: AN7254 AN7260 AN9321 AN9322 52E3 RS249
Contextual Info: RFG75N05E Data Sheet January 2002 75A, 50V, 0.008 Ohm, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

RS249

Contextual Info: RFG75N05E Data Sheet Title FG7 05E bt A, V, 08 m, an- 75A, 50V, 0.008 Ohm, N-Channel Power MOSFET Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

Logic Level p-Channel Power MOSFET

Abstract: 08E4 pspice ESD
Contextual Info: RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet Title FD8 6LE D8 6LE M, P8P LE bt A, V, 00 m, D ted, gic vel, an- July 1999 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET Features These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process,

RFD8P06LESM9A

Abstract: f8p6le Logic Level p-Channel Power MOSFET RFD8P06LE RFD8P06LESM RFP8P06LE KP115 bv164 45e4
Contextual Info: RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet January 2002 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET Features • 8A, 60V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,

f10p03l

Abstract: TC227 25e-2 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L
Contextual Info: RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet July 1999 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET Title FD1 03L, D10 3LS eyrds ter- 3515.2 Features • 10A, 30V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process,