PSPI Search Results

alessi

Abstract: E4 mark 200VA 500VA EN50081-1 EN50082-1 EN60335-1
Contextual Info: Technische Daten Beschreibung Alessi 200i-12 Alessi 200i-24 Alessi 200i-48 175VA 200VA 400VA 175VA 200VA 500VA 175VA 200VA 500VA Ausgangsleistung.1 : @ Ta = 25°C Pnominell P30minute Pspitze Ausgangsspannung Ausgangsfrequenz Ausgangswellenform Zulässige cos ϕ der last

L055

Abstract: EPCOS 800 395 l0551 1180.500 Pspice metal oxide varistor LS50k550p EPCOS 500 04
Contextual Info: Strap Varistors HighE Series Construction • Round varistor element ■ Coating: epoxy resin, flame-retardant to UL 94 V-0 ■ Bolt-holed strap terminals for screw fixing or soldering Features ■ Maximum load capacity with minimum size ■ PSpice models

FD3055

Abstract: Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs • 12A, 60V Formerly developmental type TA49082. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve

RFP70N03

Abstract: RF1S70N03SM RF1S70N03SM9A RF1S70N03
Contextual Info: RFP70N03, RF1S70N03, RF1S70N03SM S E M I C O N D U C T O R 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 70A, 30V SOURCE DRAIN GATE • rDS ON = 0.010Ω • Temperature Compensating PSPICE Model

AN9321

Abstract: HUFA75831SK8 HUFA75831SK8T MS-012AA TB370
Contextual Info: HUFA75831SK8 Data Sheet November 2000 File Number 4967 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER

IRF530N

Abstract: AN7254 AN7260 AN9321 AN9322 TB334
Contextual Info: IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

MOSFET 640N

Abstract: IRF640NS irf640* spice irf640n circuit using irf640n
Contextual Info: IRF640N/IRF640NS/IRF640NL N-Channel Power MOSFETs 200V, 18A, 0.15Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.102Ω (Typ), VGS = 10V • UIS Rateing Curve • Simulation Models - Temperature Compensated PSPICE and SABER

ISL 2651

Abstract: 630n
Contextual Info: IRF630N/IRF630NS/IRF630NL N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER

Contextual Info: IRFP140N Data Sheet March 2000 File Number 4841 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Title FP1 N bt A, 0V, 40 m, Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

Contextual Info: HUF75831SK8 Data Sheet August 2000 File Number 4796.2 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER

Contextual Info: HUF76132SK8 Data Sheet September 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 32S bt .5A 0V, 115 m, an, gic vel raF wer OST) utho • Logic Level Gate Drive • 11.5A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER∏

Contextual Info:  MACROMODELS USER MANUAL PRELIMINARY The macromodels contained in this databook operate with the Pspice and SPice simulators and with the ELDO simulator. For most of the macromodels enclosed, no specific precautions are required for use. They are only valid in the supply voltage and temperature conditions defined for each macromodel.

irf540n

Abstract: MOSFET IRF540n power 22E Datasheet IRF540n IRF540NT AN7254 AN7260 AN9321 AN9322 TB334
Contextual Info: IRF540N Data Sheet January 2002 33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE IRF540N • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

75852G

Abstract: AN7254 AN7260 AN9321 AN9322 HUF75852G3 TB334
Contextual Info: HUF75852G3 Data Sheet April 2000 File Number 4846 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER

VIP10is

Abstract: LMH6622 PSPICE Orcad dsae00144 RG-450 LMH6643 LMH6672 RF1200 VIP10 VLMH6622
Contextual Info: Application Brief VIP10 高速オペアンプ用OrCAD PSPICEライブラリ Barry Yuen アプリケーション概要 115 SPICEシミュレーションを行うにはSPICEモデルを用 意しなければなりませんがオペアンプのモデルをゼ

GX414

Abstract: GX414A GX424 GX434
Contextual Info: Modelling and PSpice Analysis of 4x1 Video Multiplexers by J. Ian Ridpath, Senior Applications Engineer, Video/Broadcast Products APPLICATION NOTE INTRODUCTION 75 Ω 37.5 Ω In order to assist the video design engineer in using Gennum's 4 x 1 video multiplexers, AC equivalent circuits have been

HUF75631SK8

Abstract: HUF75631SK8T MS-012AA TB334 AN7254 AN7260 AN9321 AN9322
Contextual Info: HUF75631SK8 Data Sheet October 1999 File Number 4785 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance - rDS ON = 0.039Ω, VGS = 10V BRANDING DASH 5 1 2 3 • Simulation Models - Temperature Compensated PSPICE and SABER

AN7254

Abstract: AN9321 AN9322 HUF75531SK8 HUF75531SK8T MS-012AA TB370
Contextual Info: HUF75531SK8 TM Data Sheet April 2000 File Number 4848 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER

Contextual Info: Si1002R_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in PSpice,

D75E60

Abstract: idw75e60 PG-TO-247-3 power recovery diode fast recovery diode 600v 120a
Contextual Info: IDW75E60 A Features: • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • 175 °C junction operating temperature • Easy paralleling • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models:

HA4741

Abstract: HA-4741 Pspice 4741
Contextual Info: HA-4741 SPICE Macromodel Application Note September 1997 MM4741.1 Introduction This application note describes the SPICE macromodel for the HA-4741, a general purpose op amp. The macromodel for the HA-4741 is PSPICE registered trademark of MicroSim Corp. compatible, and may be compatible with other

Spice 2 computer models for hexfets

Abstract: pspice high frequency mosfet n mosfet depletion pspice model parameters RFH75N05 datasheet Sharp amplifier SM30 Spice Model for TMOS Power MOSFETs an8610 RFH75N05 SM30 AN1043 Spice Model for TMOS Power MOSFETs
Contextual Info: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 Abstract accepted by users, and the ease of parameter extraction should be demonstrated. An empirical sub-circuit was implemented in PSPICE and is presented. It accurately portrays the vertical DMOS power

Spice 2 computer models for hexfets

Abstract: Spice Model for TMOS Power MOSFETs RFH75N05 datasheet Sharp amplifier SM30 NMOS depletion pspice model RFH75N05 Malouyans AN75 AN1043 Spice Model for TMOS Power MOSFETs SM30
Contextual Info: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 Abstract /Title AN75 0 Subect A ew spice ubciruit or he ower OSET eaturng lobal emeraure ption ) Autho () Keyords Interil orpoation, emionuctor accepted by users, and the ease of parameter extraction

HFA1109AMP

Abstract: 70216 C100 HFA1109 HFA1149 L100 L200 MM1149 R200 R850
Contextual Info: HFA1149 SPICE Macromodel CFA Application Note March 1997 MM1149 Introduction The HFA1149 is a high speed, low power current feedback amplifier with output Enable/Disable capability. The macromodel for the HFA1149 is PSPICE (registered trademark of MicroSim Corp.) compatible, and may be compatible with