PSOP 44 OF PA28F008SA Search Results

land pattern for TSOP 2-44

Abstract: Wells programming adapter TSOP 48 intel 44-lead psop land pattern for TSOP 56 pin F9232 E28F016SA70 tsop tray matrix outline wells 648-0482211 memory card thickness 29f200 tsop adapter
Contextual Info: D Small Outline Package Guide 1996 296514-006 8/19/97 5:26 PM FRONT.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions

pioneer PAL 007 A

Abstract: PAL 007 pioneer str 6654 PAL 008 pioneer pin details of str W 6654 sem 2106 Yamaichi Electronics ic197 648-0482211 TSOP56 jackson
Contextual Info: D Small Outline Package Guide 1999 3/25/99 4:28 PM cvrpg.doc Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions

TSOP-48 pcb LAYOUT

Abstract: str 6654 pin details of str f 6654 pin details of str W 6654 amd socket 940 pinout str W 6654 land pattern tsop 66 56-Lead TSOP Package 28F002BC 28F010
Contextual Info: D Small Outline Package Guide 1996 296514-006 8/19/97 5:26 PM FRONT.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions

PAL 007 pioneer

Abstract: pioneer PAL 007 A PAL 008 pioneer sn 7600 n 648-0482211 sem 2106 Trays tsop56 TSOP 86 land pattern amd socket 940 pinout Meritec 980020-56
Contextual Info: D Small Outline Package Guide 1999 3/25/99 4:28 PM cvrpg.doc Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions

allmax

Abstract: AS-44-40-03S-6YAM-GANG "Turpro 840" allpro 88 BP 1148 bytek GANgpro Programmer BP-1148 AS-44-40-03S-6YAM psop 1
Contextual Info: M1638 Specification Number: _ PROGRAMMING ADAPTER SPECIFICATION Item: Description: 444003S600YGNG AS-44-40-03S-6YAM-GANG Rev. B REPLACEMENT SOCKET: S-SOR-00-044-B Call Emulation Technology for a replacement socket price and delivery quote. CONNECTION TABLE:

mtbf intel

Abstract: 28F008SA intel PLD 29042 UG773
Contextual Info: ADVANCE INFORMATION i n U CORP MEMORY/PLD/ SbE D • 4ûEbl7b Q 07 732 2 O IT B I T L E 28F008SA-L 8 MBIT (1 MBIT x 8 FLASHFILE MEMORY High-Density Symm etrically Blocked Architecture — Sixteen 64 KByte Blocks Low-Voltage Operation — 3.3V ± 0.3V or 5.0V ± 10% V cc

Contextual Info: P R S ILD Q ilD liO A H V in t e J 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles

Contextual Info: ADVANCE INFORMATION 28F008SA 8 MBIT 1 MBIT x 8 FLASHFILE MEMORY High-Density Sym m etrically Blocked Architecture — Sixteen 64 KByte Blocks • Very High-Performance Read — 85/90/120 ns Maximum Access Time ■ SRAM-Com patible W rite Interface Extended Cycling Capability

Contextual Info: in te i 0 M F @ fà G $ A 7 0 M 28F008SA-L 8-MBIT (1 MBIT x 8 F L A S H F IL E T M MEMORY High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Low-Voitage Operation 3.3V ±0.3V or 5.0V ±10% Vcc Extended Cycling Capability — 10,000 Block Erase Cycles

28F008SA

Abstract: E28F008SA E0000 SmartDie TB28F008SA
Contextual Info: E PRELIMINARY 5 VOLT FlashFile MEMORY 28F008SA x8 n n n n High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles per Chip Automated Byte Write and Block Erase

28F008SAT

Contextual Info: inU PRELIMINARY 28F008SA 8-MBIT 1-MBIT X 8 FlashFile MEMORY Extended Temperature Specifications included High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles

6361A

Contextual Info: in te l 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F I L E t m MEMORY High-Performance Read — 200 ns Maximum Access Time High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Deep Power-Down Mode — 0.20 juA Ice Typical Low-Voltage Operation

Contextual Info: I P ^ iU ö Ä Ä f in te i 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Very High-Performance Read — 85 ns Maximum Access Time

Contextual Info: 28F008SA 8-MBIT 1-MBIT X 8 FlashFile MEMORY Extended Temperature Specifications Included • High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks ■ Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles

28F008SA

Contextual Info: 5 VOLT FlashFile MEMORY 28F008SA x8 • High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks ■ Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles per Chip ■ ■ Automated Byte Write and Block Erase

Contextual Info: in te l 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F IL E T M MEMORY High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Low-Voltage Operation 3.3V ±0.3V or 5.0V ±10% Vcc Extended Cycling Capability — 10,000 Block Erase Cycles — 160,000 Block Erase

Contextual Info: Â P M ftK K S S 0 M F ^ 5 M Y 0 ö [M in te i 28F008SA-L 8 MBIT (1 MBIT x 8) FLASH MEMORY High-Performance Read — 200 ns Maximum Access Time High-Density Symmetrically Blocked Architecture — Sixteen 64 KByte Blocks Deep-Powerdown Mode — 0.20 f iA Ice Typical

82360SL

Abstract: 29042
Contextual Info: in t e ! 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included u High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks • Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase

Contextual Info: ADVANCE INFORMATION 28F008SA-L 8 MBIT 1 MBIT x 8 FLASHFILE MEMORY H ig h -D e n s ity S y m m e trica lly B locked A rch itectu re — S ixteen 64 K B yte B locks L o w -V o ltag e O p eratio n — 3.3V ± 0.3V or 5.0V ± 10% V cc • H ig h -P erfo rm a n ce Read

E28F008SA-120

Abstract: E28F008SA 28F008SA
Contextual Info: • High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks ■ Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles per Chip n Automated Byte Write and Block Erase — Command User Interface — Status Register

Contextual Info: in t e i A O W A t M ! D M F @ I^ ß iflÄ ¥ D fiO 28F008SA-L 8-MBIT (1 MBIT x 8 FLASH FI LETM MEMORY • High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks ■ Low-Voltage Operation 3.3V + 0.3V or 5.0V ±10% Vcc ■ Extended Cycling Capability

SmartDie

Abstract: 271296 ALi Corporation M1431
Contextual Info: in te i 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F IL E T M High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Low-Voltage Operation 3.3V + 0.3V or 5.0V ±10% Vcc Extended Cycling Capability — 10,000 Block Erase Cycles — 160,000 Block Erase