PS-4480 B Search Results

FAH diode

Abstract: D617 M/diode fah 23
Contextual Info: Bulletin 12063/A bitemational I»i]Rectifier SD153N/R SERIES FAST RECOVERY DIODES Stud Version Features • High pow er FAST recovery diode series ■ 1.0 to 1.5 ps recovery tim e ■ High voltage ratings up to 1600V ■ High current capability ■ O ptim ized turn on and turn o ff ch a ra cte ristics

Contextual Info: Bulletin 12063/A International ^R ectifier SD153N/R SERIES FAST RECOVERY DIODES Stud Version Features • H ig h p o w e r F A S T re c o v e ry d io d e s e r ie s ■ 1 .0 to 1 .5 |js re c o v e ry tim e ■ H ig h v o lta g e ra tin g s up to 1 6 0 0 V

18f2580

Abstract: PIC18F2480 PIC18XXX8 PIC18FX480 HD 4480 PIC18F4480 application example code PIC18F2580 PIC18F4480 PIC18F4580 E11H
Contextual Info: PIC18F2480/2580/4480/4580 Data Sheet 28/40/44-Pin Enhanced Flash Microcontrollers with ECAN Technology, 10-Bit A/D and nanoWatt Technology 2007 Microchip Technology Inc. Preliminary DS39637C Note the following details of the code protection feature on Microchip devices:

L512F

Abstract: ac202a AZ 280 chip AC-202A on line ups circuit schematic diagram E72445
Contextual Info: I E5HE537 55E » CRYD0 Ï1 co :_— □Ü0D7GÛ _ — , 1 Tb • CRY 'JM fô U W CLÛfôü@@ 0@@ffi)fi^0€/MQ Ki / î ' ' ; ' -, :j . - Series Type L-Case style - Ceramic Bas.e) , Current . 3 -15 Amps 5 - 25 Amps 6 - 42.5 Amps* Example: L512F

L512F

Abstract: gi diode A1525 E72445 cms diode
Contextual Info: CRYDOtl co 55E I E5H E537 » :_— _ — , □ □ 0 0 7 D fl 1 T b H i C R Y :m m smDffiOiBd o@@rom^o€/MQ Ki / Ì ' ' ; ' -, :j . - Series Type L-Case style - Ceramic Bas.e , Current . 3 -15 Amps 5 - 25 Amps 6 - 42.5 Amps* Example: L512F

Y51 h 85c

Abstract: 7377 y133 Y134 Y107 Y228 DI01 KS0606 Y239 transistor+Bc+542
Contextual Info: 240CH SOURCE DRIVER FOR TFT LCD KS0606 INTRODUCTION KS0606 is 240 output liquid crystal display LCD source driver. It is used in the liquid crystal display panel for pocket sized TV, CNS etc. After sampling and holding at the SAMPLE-HOLD circuit at the clock synchronized timing, the R,G,B, 3CH. video

Y51 h 85c

Abstract: 4560 opamp 7377 y133 KS0606 Y176 CTR CAPACITOR DATASHEET Y152 Y228 Y239
Contextual Info: 240CH SOURCE DRIVER FOR TFT LCD KS0606 INTRODUCTION KS0606 is 240 output liquid crystal display LCD source driver. It is used in the liquid crystal display panel for pocket sized TV, CNS etc. After sampling and holding at the SAMPLE-HOLD circuit at the clock synchronized timing, the R,G,B, 3CH. video

Contextual Info: QFET N-CHANNEL FQA30N40 FEATURES BV qss = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 90nC Typ. •

Contextual Info: QFET N-CHANNEL FQAF30N40 FEATURES BV qss = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 90nC Typ. •

1N4461-1N4496

Abstract: 1N1486 IN4484 IN4405 1N4465 1N4469 1N4475 IN449 1N4466 1N4467
Contextual Info: POWER ZENERS 1N4461-1N4496 JAN.JANTX &JANTXV 1.5 Watt, Military FEATURES • 5 Times Greater Surge Rating than JAN1N3016 Series • Low Reverse Current: to 50nA • V4 Size of Conventional 1 Watt Zeners DESCRIPTION Fused-in-glass, metallurgically bonded 1.5 watt zeners, qualified to MIL-S-19500/406.

HMP45

Abstract: DDR2-667 DDR2-800 HMP451S6MMP8C h5ps4g83mmp DDR2 hynix
Contextual Info: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 2Gb version A This Hynix unbuffered Small Outline Dual In-Line Memory Module DIMM series consists of 2Gb version A DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 2Gb version A based

CD 5888

Abstract: Virtual Keyboard
Contextual Info: STPC Linux Xfree86 server Installation Guide Issue 1.0 August 30, 2000 STMicroelectronics 1/10 Information provided is believed to be accurate and reliable. However, ST Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringements of patents or other

HP8133

Abstract: SY89296L Tektronix 464 11801a SY89295L 9740 ECJ-0EF1C104Z ERJ-2RKF1002X
Contextual Info: 2.5V/3.3V 2.5GHz PROGRAMMABLE DELAY CHIP FEATURES Precision Edge SY89295L/296L EVALUATION BOARD DESCRIPTION • ■ ■ ■ ■ ■ ■ Maximum frequency > 2.5GHz Programmable range: 2.2ns to 12.43ns 10ps delay increments Low voltage 2.5/3.3V power supply operation

A0200-4

Abstract: ECH8602R
Contextual Info: ECH8602R Ordering number : ENA0200 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8602R General-Purpose Switching Device Applications Features • • • • Low ON-resistance. 2.5V drive. Best suited for LiB charging and discharging switch.

IRFP140R

Abstract: st3pf 142R
Contextual Info: HARRIS IRFP140R, IRFP141R IRFP142R, IRFP143R N-Channel Power MOSFETs Avalanche Energy Rated A u g u s t 1991 Features Package TO-247 TOP VIEW • 2 7 A and 31 A, 80 V - 1 0 0V • rDS on = 0 .0 7 7 ÎÏ and 0 .0 9 9 f i • Single Pulse A valanche Energy Rated

1754

Abstract: PI6C3991 PI6C39911 71713 39911-5
Contextual Info: 3545 North First St. • San Jose, CA 95134 • USA PRODUCT/PROCESS CHANGE NOTICE PCN PCN Number: 05-12-R* Means of Distinguishing Changed Devices: Date Issued: June 10, 2005 (Revised date June 24, 2005) Product(s) Affected: PI6C3991, 3991I, 3991-2, 3991-5, 3991-5I;

PAR/2900K

Contextual Info: DATA SHEET CLL042-1218A5-273M1A2 DATA SHEET 1/11 1. Scope of Application This data sheet is applied to the LED package, model CLL042-1218A5-273M1A2. 2. Part code CLL 042 - 12 18 A5 - 27 3 M1 A2 [1] [2] [3] [4] [5] [6] [1] Part Code [2] Dies in series quantity

K4H510438D-ZCB3

Abstract: K4H510438DZCCC tsop-ii 66PIN JEDEC TRAY "Material Declaration Sheet" tsop-ii 66 JEDEC TRAY k4h511638d
Contextual Info: K4H510438D K4H510838D K4H511638D DDR SDRAM 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

TMOS E-FET

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MTV16N50E TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 16 AMPERES 500 VOLTS RDS on = 0-40 OHM N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination

Contextual Info: DATA SHEET CLL042-1218A5-273M1A2 and are trademarks or registered trademarks of CITIZEN HOLDINGS CO., LTD. JAPAN. is a trademark or a registered trademark of CITIZEN ELECTRONICS CO., LTD. JAPAN. Ref.CE-P2327 03/13 R1 1013 DATA SHEET

Contextual Info: DATA SHEET CLL042-1218A5-273M1A2 and are trademarks or registered trademarks of CITIZEN HOLDINGS CO., LTD. JAPAN. is a trademark or a registered trademark of CITIZEN ELECTRONICS CO., LTD. JAPAN. Ref.CE-P2327 03/13 DATA SHEET 1/11 1. Scope of Application

Contextual Info: 4305271 D o s m a s STB • H a r r is HAS IRFP140R, IRFP141R IRFP142R, IRFP143R N -C hannel Power MOSFETs Avalanche Energy Rated August 1991 Features Package TO -247 TOP VIEW • 27A and 31 A, 80V - 100V • ros on = 0.0770 and 0.099ÎÎ DRAIN (TAB) • Single Pulse Avalanche Energy Rated

str 4479

Abstract: 3N204 3n206 3N204 equivalent 3N205
Contextual Info: T Y P ES 3N204, 3N205, 3N206 N -C H A N N E L D U A L-G A T E D EP LETIO N -TYP E IN S U LA T E D -G A T E F IE LD -E FF E C T TR A N S IS TO R S B U L L E T IN N O . D L -S 7 2 1 1 7 1 7 , M A Y 1 97 2 D EPLETIO N -TYPE MOS S ILIC O N TRAN SISTO RS • Monolithic Gate-Protection Diodes

HYMD512646A8J

Contextual Info: 128Mx64 bits Unbuffered DDR SDRAM DIMM HYMD512646A8J DESCRIPTION Preliminary Hynix HYMD512646A L 8J series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx64 high-speed memory arrays. Hynix HYMD512646A(L)8J series