PS 90 32 Search Results

Contextual Info: CY2302 Frequency Multiplier and Zero Delay Buffer Frequency Multiplier and Zero Delay Buffer Features Configuration Options • 90 ps typical jitter OUT2 ■ 200 ps typical jitter OUT1 FBIN FS0 FS1 OUT1 OUT2 ■ 65 ps typical output-to-output skew OUT1 2 x REF

P6150

Abstract: 06704 067-0422-XX
Contextual Info: >8 GHz Differential Signal Acquisition System with SMA Inputs P7380SMA Features & Benefits >8 GHz Bandwidth typical <55 ps 10% to 90% Rise Time (guaranteed) <35 ps 20% to 80% Rise Time (typical) Dual SMA Inputs to Internal 50 Ω Termination Network High Bandwidth Differential

IRF 501

Contextual Info: GATED MICROCHANNEL PLATE PHOTOMULTIPLIER TUBES MCP-PMT R5916U-50 SERIES FEATURES ●High Speed Gating by Low Supply Voltage (+10 V) Gate Rise Time : 1 ns A Gate Width : 3 ns ●Fast Rise Time : 180 ps Narrow T.T.S. B : 90 ps ●High Switching Ratio: 108 at 500 nm

SH100E

Abstract: siemens SH100E elxr siemens Nand gate SH100E5 TRANSISTOR K 2191
Contextual Info: 7 1991 SIEMENS ASIC Product Description SH100E ECL/CML Gale Amy Family FEATURES • Gate complexities from 1,500 to 16,000 gates ■ 120 ps gate delay, 90 ps differential • 1.5 GHz D flip-flop, 1.7 GHz differential ■ Both ECL and CML macro families ■ TTL I/O available

49F040

Contextual Info: Features * Single Voltage Operation - 5V Read - 5V Reprogramming * Fast Read Access Time - 90 ns * Internal Program Control and Timer * 16K Bytes Boot Block With Lockout * Fast-Erase Cycle Time -1 0 seconds * Byte-By-Byte Programming - 50 ps/Byte * Hardware Data Protection

Dual Output

Abstract: fuse t6.3a 2502P0600T Landwin 2502P0600T CSA22 Landwin 2500S060
Contextual Info: MINT2270A 270W Dual Output Series Medical – Universal Input Power Supply 2 Year Warranty •270W Convection Cooled AC-DC Power Supply •Up to 90% Efficiency Typical •Natural Interleaving Technology for PFC •LLC Technology for DC Converter •Remote ON/OFF by PS-ON Signal

Contextual Info: Features * Single Voltage Operation - 5V Read - 5V Reprogramming * Fast Read Access Time - 90 ns * Internal Program Control and Timer * 16K Bytes Boot Block With Lockout * Fast Erase Cycle Time -1 0 seconds * Byte-By-Byte Programming -1 0 ps/Byte Typical * Hardware Data Protection

0a0c1

Contextual Info: Features * Single Voltage Operation - 5V Read - 5V Reprogramming * Fast Read Access Tim e - 90 ns * Internal Program Control and Tim er * 8K Bytes Boot Block With Lockout * Fast Erase Cycle Tim e - 1 0 seconds * Byte-By-Byte Programming - 50 ps/Byte * Hardware Data Protection

Contextual Info: 5 4 R1 VIN RUN1 2 20K E3 ON 1 REVISION HISTORY REV _ 2 DESCRIPTION APPROVED DATE PRODUCTION HAORAN W. 11-12-13 PHASMD1 JP2 INTVCC1 120 90 60 DEG DEG DEG 1 4 PLLIN RUN1 5 C1 OPT 2 VIN 3 2 RUN1 4 1 SW1 RUN1 R2 OPT 2 ECO 3 E1 3 MODE JP1 PS BM CCM 1 4 INTVCC1

Contextual Info: 4 INTVCC E1 1 2 20K E3 4 JP1 PHASMD 120 90 60 DEG DEG DEG 1 4 INTVCC PLLIN RUN1 2 C1 OPT 2 REV _ CLKOUT RUN1 ON 5 1 REVISION HISTORY ECO 4 1 SW1 RUN1 R2 OPT 2 3 RUN1 R1 VIN 3 MODE PS BM CCM 3 5 DESCRIPTION 2 APPROVED DATE JIAN L. 9-30-13 PRODUCTION E2 JP2

Contextual Info: 68 129-00 o co N° TES 1| L M a t e r i a l : NY66 UL94-V-0, GF 30°/ 2. P l a ti n g 3. P r o d u c t s Post Tin L e a d Specificatio n PlatingiSnPb 1 §0 □ g s If c 90 a ° PS-68 129-00 I B ENG NO. A B 68 129-02 11 2.5 68 129-03 1 5 68 129-04 1 7.5

835.8011.52

Abstract: hfa3424 HFA3524 HFA3524IA HFA3524IA96 HFA3724 HSP3824 prism 2 hp5385
Contextual Info: HFA3524 NS ESI G W D 90 4 E N 4 N te r a t OR ED F ps F n E ND II, 11 M b p ort Ce /ts c M M p O u M m C o S S I c E l R PR ca rs il. NO T ER TO T e ch ni Data .inteSheet w r F w u R E a ct o rw nt SI L o o r c o 8 -I N TE R 1 -8 8 itle b() tho yrds

Am29BDS323D

Contextual Info: Am29BDS323D: Ultra Performance Flash Application Note by Bushra Haque The Am29BDS323D burst mode flash memory device represents AMD’s unique solution to the customer’s high performance, low voltage needs. The Am29BDS323D is a 32 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode Flash memory device,

DDR3L-1066

Abstract: DDR3L-800 78-Ball TIS87
Contextual Info: 2Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C

thyristor BT 161

Contextual Info: I . I Bulletin127092 rev. A 09/97 International IG R Rectifier ir k .f i 32. s e r i e s FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules 130 A Features • Fast turn-off thyristor ■ Fast recovery diode ■ H igh surge capability

DDR3L-1866

Abstract: MT41K512M8RH-125 256M16
Contextual Info: 4Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C

DDR3L-1866

Abstract: MT41K256M16 MT41K1G4 MT41K512M8 901KB 96-ball FBGA 512M8 micron FBGA SDRAM
Contextual Info: 4Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C

MT41K512M8RH-125

Abstract: MT41K512M8RH 256M16 mt41k256m16 78ball 9mm x 12mm 140PS MT41K512M8RH125
Contextual Info: 4Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C

MT41K512M8RH-125

Abstract: 256M16
Contextual Info: 4Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C

DDR3L-1866

Abstract: MT41K512M4
Contextual Info: 2Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description • • • • The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Unless stated

MT41K64M16

Abstract: AC175 DDR3L-80 64M16 ac150
Contextual Info: 1Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K256M4 – 32 Meg x 4 x 8 banks MT41K128M8 – 16 Meg x 8 x 8 banks MT41K64M16 – 8 Meg x 16 x 8 banks Description • TC of 0°C to 95°C – 64ms, 8192-cycle refresh at 0°C to 85°C – 32ms at 85°C to 95°C

DDR3L-1600

Abstract: 78-Ball DDR3L-1066 TIS87 MT41K512M4
Contextual Info: 2Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description • • • • The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Unless stated

MT41K256M16

Contextual Info: Preliminary‡ 4Gb: x8, x16 DDR3Lm SDRAM Description 1.35V DDR3Lm SDRAM MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description Features DDR3Lm SDRAM 1.35V is a low current self refresh version, via a TCSR feature, of the DDR3L SDRAM

256M16

Abstract: MT41K512M smd code marking ID MT41k micron
Contextual Info: Preliminary‡ 4Gb: x8, x16 DDR3Lm SDRAM Description 1.35V DDR3Lm SDRAM MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description Features • • • • • Automatic self refresh ASR Write leveling Multipurpose register Output driver calibration