PS 90 32 Search Results
PS 90 32 Price and Stock
Allegro MicroSystems LLC APS13290KLHALTBoard Mount Hall Effect / Magnetic Sensors HALL EFFECT LATCH |
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APS13290KLHALT | 4,724 |
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Allegro MicroSystems LLC APS13290KUAABoard Mount Hall Effect / Magnetic Sensors GENERAL PURPOSE HALL EFFECT LATCH |
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APS13290KUAA | 3,864 |
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Apacer Technology Inc APS297F032G-4BTM1GWFSolid State Drives - SSD Half Slim MO 297 SFD18S6-M 15nm 32G Extended Temperature 15nm /Replacement: APS297F032G-6BTM1GWF |
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APS297F032G-4BTM1GWF | 12 |
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Apacer Technology Inc APSDM032GS2AN-PTM1Solid State Drives - SSD SDM5A-M 7P/180D Slim2 Standard Speed MLC with Housing 32GB |
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APSDM032GS2AN-PTM1 | 4 |
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Apacer Technology Inc APSDM032GD2AN-PTM1WSolid State Drives - SSD SATA3 SDM5A-M Disk Module 7-Pin/90 Degree MLC Low Profile 32GB NO Housing Extended Temp 15nm |
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APSDM032GD2AN-PTM1W | 1 |
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PS 90 32 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: CY2302 Frequency Multiplier and Zero Delay Buffer Frequency Multiplier and Zero Delay Buffer Features Configuration Options • 90 ps typical jitter OUT2 ■ 200 ps typical jitter OUT1 FBIN FS0 FS1 OUT1 OUT2 ■ 65 ps typical output-to-output skew OUT1 2 x REF |
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CY2302 | |
P6150
Abstract: 06704 067-0422-XX
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P7380SMA RS-232-C, 1W-17350-0 P6150 06704 067-0422-XX | |
IRF 501Contextual Info: GATED MICROCHANNEL PLATE PHOTOMULTIPLIER TUBES MCP-PMT R5916U-50 SERIES FEATURES ●High Speed Gating by Low Supply Voltage (+10 V) Gate Rise Time : 1 ns A Gate Width : 3 ns ●Fast Rise Time : 180 ps Narrow T.T.S. B : 90 ps ●High Switching Ratio: 108 at 500 nm |
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R5916U-50 R5916U-50) TPMHB0244EA TPMHB0245EB SE-164 TPMH1102E10 B1201 IRF 501 | |
SH100E
Abstract: siemens SH100E elxr siemens Nand gate SH100E5 TRANSISTOR K 2191
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OCR Scan |
SH100E 10KH/100K M33S001 SH100E siemens SH100E elxr siemens Nand gate SH100E5 TRANSISTOR K 2191 | |
49F040Contextual Info: Features * Single Voltage Operation - 5V Read - 5V Reprogramming * Fast Read Access Time - 90 ns * Internal Program Control and Timer * 16K Bytes Boot Block With Lockout * Fast-Erase Cycle Time -1 0 seconds * Byte-By-Byte Programming - 50 ps/Byte * Hardware Data Protection |
OCR Scan |
AT49F040 AT49F040T 0998B 10/98/xM 49F040 | |
Dual Output
Abstract: fuse t6.3a 2502P0600T Landwin 2502P0600T CSA22 Landwin 2500S060
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MINT2270A EN/IEC/UL60601-1 100-240VAC 115VAC: 264VAC, 250VAC EN6100r 2500S060, 2503T012P Dual Output fuse t6.3a 2502P0600T Landwin 2502P0600T CSA22 Landwin 2500S060 | |
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Contextual Info: Features * Single Voltage Operation - 5V Read - 5V Reprogramming * Fast Read Access Time - 90 ns * Internal Program Control and Timer * 16K Bytes Boot Block With Lockout * Fast Erase Cycle Time -1 0 seconds * Byte-By-Byte Programming -1 0 ps/Byte Typical * Hardware Data Protection |
OCR Scan |
AT49F080 0584C 10/98/x | |
0a0c1Contextual Info: Features * Single Voltage Operation - 5V Read - 5V Reprogramming * Fast Read Access Tim e - 90 ns * Internal Program Control and Tim er * 8K Bytes Boot Block With Lockout * Fast Erase Cycle Tim e - 1 0 seconds * Byte-By-Byte Programming - 50 ps/Byte * Hardware Data Protection |
OCR Scan |
AT49F020 0567C-- 10/98/xM 0a0c1 | |
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Contextual Info: 5 4 R1 VIN RUN1 2 20K E3 ON 1 REVISION HISTORY REV _ 2 DESCRIPTION APPROVED DATE PRODUCTION HAORAN W. 11-12-13 PHASMD1 JP2 INTVCC1 120 90 60 DEG DEG DEG 1 4 PLLIN RUN1 5 C1 OPT 2 VIN 3 2 RUN1 4 1 SW1 RUN1 R2 OPT 2 ECO 3 E1 3 MODE JP1 PS BM CCM 1 4 INTVCC1 |
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BSC010NE2LSI 100uF 330uF LTC3875EUJ | |
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Contextual Info: 4 INTVCC E1 1 2 20K E3 4 JP1 PHASMD 120 90 60 DEG DEG DEG 1 4 INTVCC PLLIN RUN1 2 C1 OPT 2 REV _ CLKOUT RUN1 ON 5 1 REVISION HISTORY ECO 4 1 SW1 RUN1 R2 OPT 2 3 RUN1 R1 VIN 3 MODE PS BM CCM 3 5 DESCRIPTION 2 APPROVED DATE JIAN L. 9-30-13 PRODUCTION E2 JP2 |
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220nF 100uF 330uF LTC3875EUJ | |
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Contextual Info: 68 129-00 o co N° TES 1| L M a t e r i a l : NY66 UL94-V-0, GF 30°/ 2. P l a ti n g 3. P r o d u c t s Post Tin L e a d Specificatio n PlatingiSnPb 1 §0 □ g s If c 90 a ° PS-68 129-00 I B ENG NO. A B 68 129-02 11 2.5 68 129-03 1 5 68 129-04 1 7.5 |
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UL94-V-0, PS-68 | |
835.8011.52
Abstract: hfa3424 HFA3524 HFA3524IA HFA3524IA96 HFA3724 HSP3824 prism 2 hp5385
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HFA3524 5GHz/600MHz HFA3524 600MHz 835.8011.52 hfa3424 HFA3524IA HFA3524IA96 HFA3724 HSP3824 prism 2 hp5385 | |
Am29BDS323DContextual Info: Am29BDS323D: Ultra Performance Flash Application Note by Bushra Haque The Am29BDS323D burst mode flash memory device represents AMD’s unique solution to the customer’s high performance, low voltage needs. The Am29BDS323D is a 32 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode Flash memory device, |
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Am29BDS323D | |
DDR3L-1066
Abstract: DDR3L-800 78-Ball TIS87
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MT41K512M4 MT41K256M8 MT41K128M16 8192-cycle 09005aef83ed2952 DDR3L-1066 DDR3L-800 78-Ball TIS87 | |
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thyristor BT 161Contextual Info: I . I Bulletin127092 rev. A 09/97 International IG R Rectifier ir k .f i 32. s e r i e s FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules 130 A Features • Fast turn-off thyristor ■ Fast recovery diode ■ H igh surge capability |
OCR Scan |
Bulletin127092 thyristor BT 161 | |
DDR3L-1866
Abstract: MT41K512M8RH-125 256M16
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MT41K1G4 MT41K512M8 MT41K256M16 8192-cycle 09005aef84780270 DDR3L-1866 MT41K512M8RH-125 256M16 | |
DDR3L-1866
Abstract: MT41K256M16 MT41K1G4 MT41K512M8 901KB 96-ball FBGA 512M8 micron FBGA SDRAM
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MT41K1G4 MT41K512M8 MT41K256M16 8192-cycle 09005aef84780270 DDR3L-1866 MT41K256M16 MT41K1G4 MT41K512M8 901KB 96-ball FBGA 512M8 micron FBGA SDRAM | |
MT41K512M8RH-125
Abstract: MT41K512M8RH 256M16 mt41k256m16 78ball 9mm x 12mm 140PS MT41K512M8RH125
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MT41K1G4 MT41K512M8 MT41K256M16 8192-cycle 09005aef84780270 MT41K512M8RH-125 MT41K512M8RH 256M16 mt41k256m16 78ball 9mm x 12mm 140PS MT41K512M8RH125 | |
MT41K512M8RH-125
Abstract: 256M16
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MT41K1G4 MT41K512M8 MT41K256M16 8192-cycle 09005aef84780270 MT41K512M8RH-125 256M16 | |
DDR3L-1866
Abstract: MT41K512M4
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MT41K512M4 MT41K256M8 MT41K128M16 78-ball 78-ball 09005aef83ed2952 DDR3L-1866 MT41K512M4 | |
MT41K64M16
Abstract: AC175 DDR3L-80 64M16 ac150
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MT41K256M4 MT41K128M8 MT41K64M16 8192-cycle 09005aef833b7221 MT41K64M16 AC175 DDR3L-80 64M16 ac150 | |
DDR3L-1600
Abstract: 78-Ball DDR3L-1066 TIS87 MT41K512M4
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MT41K512M4 MT41K256M8 MT41K128M16 78-ball 78-ball 09005aef83ed2952 DDR3L-1600 DDR3L-1066 TIS87 MT41K512M4 | |
MT41K256M16Contextual Info: Preliminary‡ 4Gb: x8, x16 DDR3Lm SDRAM Description 1.35V DDR3Lm SDRAM MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description Features DDR3Lm SDRAM 1.35V is a low current self refresh version, via a TCSR feature, of the DDR3L SDRAM |
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MT41K512M8 MT41K256M16 09005aef8488935b MT41K256M16 | |
256M16
Abstract: MT41K512M smd code marking ID MT41k micron
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MT41K512M8 MT41K256M16 09005aef8488935b 256M16 MT41K512M smd code marking ID MT41k micron | |