PRSP0032DA Search Results

PRSP0032DA

Abstract: PRSP0032DA-A MM-550 MP525PC
Contextual Info: Magazine MP525PC code Renesas code PRSP0032DA-A Magazine PVC material Polyvinyl chloride Previous code Maximum storage No. IC/Magazine Maximum storage No. Magazine/Inner box Maximum storage No. IC/Inner box Packing form 32P2M-A 25 36 900 Dry pack Unit:mm

4x20

Abstract: PRSP0032DA-A PSOP-32 SOP32 P-SOP32-11
Contextual Info: JEITA Package Code P-SOP32-11.4x20.75-1.27 RENESAS Code PRSP0032DA-A Previous Code 32P2M-A E 17 *1 F 1 NOTE 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Index mark 16 c A2 *2 Reference Symbol D A S

Contextual Info: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0300 Rev.3.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher

R1LP0108ESP

Abstract: R1LP0108ESF R1LP0108 R1LP0108ESP-7SI R1LP0108ESF-7SR R1LP0108ESP-7SR R1LP0108es r1lp0108esp-5si#s0 r1lp0108esp-7sr#b0 ttl 7202
Contextual Info: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0200 Rev.2.00 2011.01.14 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher

Contextual Info: R1LV0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0049EJ0200 Rev.2.00 2011.01.14 Description The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0108E Series has realized higher

Contextual Info: R1LV0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0049EJ0300 Rev.3.00 2013.6.21 Description The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0108E Series has realized higher

MTE3216H-32P2M-A

Abstract: PRSP0032DA-A PTSB0044GA-A 48P3R PTSA0032KA-B 1895 ic TE322 32P3H- E
Contextual Info: Standard Orientation of Package The pin 1 is located in the hatching portion. Reel off direction The pin 1 may also be located in the following portion for reverse bent packages and some QFPs. Reel off direction ReelType TYPE A TYPE B A 254 330 N 100 100

R1LV0108ESA-7SR

Abstract: r1lv0108 R1LV0108ESP R1LV0108ESP-7SI R1LV0108E R1LV0108ESF-5SI R1LV0108ESF-7SR R1LV0108ESF-7SI#S0 r1lv0108esa-7sr#s0 R1LV0108ESA
Contextual Info: R1LV0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0049EJ0200 Rev.2.00 2011.01.14 Description The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0108E Series has realized higher