PROM 2708 Search Results

eprom 2708

Abstract: memory EPROM 2708 motorola 2708 eprom
Contextual Info: g MCM2708 MCM27A08 MOTOROLA 1024 X 8 ERASABLE PROM MOS The M C M 2708/27A 08 is an 8192-bit Erasable and Electrically Reprogrammable PROM designed fo r system debug usage and similar applications requiring nonvolatile mem ory th a t could be reprogrammed periodically. The transparent w indow on the package

intel 2708 eprom

Abstract: 2708 eprom prom 2708 eprom 2708 i 2708 Intel 2708 2708L
Contextual Info: intei 2708 Max. Power Max. Access 2708 800 mW 450ns 2708L 425 mW 450 ns 2708-1 800 mW 350 ns 2708-6 800 mW 550ns Low Power Dissipation — 425 mW Max. 2708L ROM /PROM 8K (1K x 8) UV ERASABLE PROM Data Inputs and Outputs TTL Compatible during both Read and

Z80A CPU

Abstract: Z80A-CTC z80a-PIO 2316E 4027 ram Z80A Z80A-CPU z80 pio Z80 RAM 1024x1 static ram
Contextual Info: MOS INTEGRATED CIRCUITS continued POWER TEMP. RANGE (°C) RAM 1024x1 bit static 2 5 - 0.25 2.2 2.2 33 - 0-70 D IP K, M M 2316E •ROM 2Kx8 bit 2 5 - 0.45 2.2 2.2 40 - 0-70 DIP R, U M 2704 PROM 512x8 bit 5 5 12 0.45 2.2 2.2 - - 0-70 D IP J M 2708 PROM 1Kx8 bit

intel 2708 eprom

Abstract: 2708 eprom Intel 2708 prom 2708 eprom 2708 2708L AC421
Contextual Info: in te i Max. Power Max. Access 2708 800 mW 450ns 2708L 425 mW 450 ns 2708-1 800 mW 350 ns 2708-6 800 mW 550ns • Low Power Dissipation — 425 mW Max. 2708L ■ Fast Access Time — 350 ns Max. (2708-1) Static — No Clocks Required ■ ROM/PROM 2708 8K (1K x 8) UV ERASABLE PROM

intel 2708 eprom

Abstract: 7406 TTL interface 2708 memory Intel AP-17 2708 JL prom 2708
Contextual Info: intei In te l C o rp o ra tio n , 1 9 7 6 APPLICATION NOTE AP-17 2708 Contents Application of the Intel82708 8K Erasable PROM INTRO DUC TIO DEVICE DESCRIPTION. 1

6301-1 prom

Contextual Info: Standard Performance Schottky Generic PROM Family 53/63xx-i Features/Benefits Description • Standard Schottky processing • Reliability proven nichrome fusible links qualified for MIL-M-38510 • Drop in compatible ROMs • PNP inputs for low input current

RFR-4

Abstract: 30382 C17200 c3600 MIL-G45204 C172000 ASTM-B194-92 eprom 27256
Contextual Info: 3825-140-18 E-PROM ADAPTER 27256 TO 2708 PCB FOOTPRINT SPECIFICATIONS: • Female socket material is black Ul 94V-0 Glass-filled Polyester Thermoplastic PET . • PCB is black RFR-4,.062[1.56] or .094 [2.39] thick • Male pin is Brass Alloy 360 1.2 hard per UNS C36000

Contextual Info: 3825-140-18 E-PROM ADAPTER 27256 TO 2708 PCB FOOTPRINT SPECIFICATIONS: • Female socket material is black Ul 94V-0 Glass-filled 4/6 Nylon 170ºC continuous use temp. • PCB is FR-4,.062[1.56] or .094 [2.39] thick • Male pin is Brass Alloy 360 1.2 hard per UNS C36000

Contextual Info: 24-303825-10 E-PROM ADAPTER 27256 TO 2708 PCB FOOTPRINT SPECIFICATIONS: • Female socket material is black Ul 94V-0 Glass-filled 4/6 Nylon 170ºC continuous use temp. • PCB is FR-4,.062[1.56] or .094 [2.39] thick • Male pin is Brass Alloy 360 1.2 hard per UNS C36000

Contextual Info: 24-303825-10 E-PROM ADAPTER 27256 TO 2708 PCB FOOTPRINT SPECIFICATIONS: • Female socket material is black Ul 94V-0 Glass-filled 4/6 Nylon 170ºC continuous use temp. • PCB is FR-4,.062[1.56] or .094 [2.39] thick • Male pin is Brass Alloy 360 1.2 hard per UNS C36000

memory EPROM 2708

Abstract: F2708 F2708-1
Contextual Info: F2708 1024 x 8 UV Erasable PROM MOS Memory Products Logic Symbol Description The F2708 is an 8,192-bit ultraviolet light Erasable and electrica lly Programmable Read Only Memory EPROM manufactured using the Isoplanar n-channel silicon gate technology. Organized 1024 x 8 , the

N82S185

Abstract: N82S141 93427c 74S200 N82S147 6331-1 6301-1 prom 74S301 DM74S287 PROM intel 3601
Contextual Info: BIPOLAR M E M O R Y M AY 1962 8192-BIT BIPOLAR PROM 2 0 4 8 x 4 82S185(T.S.) DESCRIPTIO N FEATURES T h e 82S 185 is fie ld p ro g ra m m a b le , w h ic h

TPG15

Abstract: TMP91P642N TMP91P642
Contextual Info: T O S H IB A UNDER DEVELOPMENT TMP91P642 CMOS 8-BIT MICROCONTROLLERS TMP91P642N/TMP91P642F 1. OUTLINE AND CHARACTERISTICS The TMP91P642 is a high-speed advanced 8-bit micro controller applicable to a variety of equipment. The TMP91P642N, TMP91P642F is the PROM microcontroller with 16K X 8bits

82S2708

Abstract: N82S2708F N82S2708 S82S2708
Contextual Info: S ig n e tic s Memories - Bipolar Proms- N82S2708 - 8192 Bit Field Programmable Bipolar Prom CONNECTION DIAGRAM GENERAL DESCRIPTION The 82S2708 is field programmable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data sheet. The standard

m2708

Abstract: 8K 1K x 8 UV Erasable PROM
Contextual Info: intei M2708 8K 1K x 8 UV ERASABLE PROM i Extended Temperature Range: —55°C to 100°C • Static: No Clocks Required Fast Programming: Typ. 100 sec. For All 8K Bits ■ Inputs and Outputs TTL Compatible During Both Read and Program Modes Low Power During Programming

Contextual Info: intei M2708 8K 1K x 8 UV ERASABLE PROM i Extended Temperature Range: - 55°C to 100°C • Static: No Clocks Required Fast Programming: Typ. 100 sec. For All 8K Bits ■ Inputs and Outputs TTL Compatible During Both Read and Program Modes Low Power During Programming

MK2716T

Abstract: MKB2716-87 MK2716 MKB2716-88 MKB2716-90 Mostek
Contextual Info: MOSTEK 2048 x 8-BIT UV ERASABLE PROM Processed to MIL-STD-883, Method 5004, Class B M K B 2 7 1 6 T /J -8 7 /8 8 /9 0 FEATURES □ Extended operating tem perature (~55°C =£ TA < 100°C) □ Replacement for popular 1024 x 8 bit 2708 type EPROM □ Single +5 volt power supply during READ operation

IC 74187

Abstract: lt 6246 MMI 6330 74s188 ic 74s201 6301-1 prom HARRIS 8249 mmi 6331 82S2708 74S288
Contextual Info: Siginetics Integrated Circuits Schottky T T L Schottky T T L 74S Series Cont. TYPE NO. N74S260N N74S280AN N74S287N N74S288N N74S289N DE SC R IPTIO N Dual 5 -ln p u t N O R Gate 9 -B it O dd/E ven P arity G enerator/Checker . 102 4-B it Prom -3 State? o /p

intel 4308

Abstract: 221-121 4001 intel rom Intel 4001 P 4308 INTEL I8022 intel 8755 8021 microcomputer C2608 D8355
Contextual Info: P ß S O IS S lO K IÄ IS V 3636B 16K 2K x 8 BIPOLAR PROM 3636B-1 35 ns M ax 3636B-2 45 ns M ax • Fast Access Time: 25 ns Typically ■ Three-State Outputs ■ Low Power Dissipation: 0.05mW/Biit Typically ■ Hermetic 24-Pin DIP ■ Polycrystalline Silicon Fuses for

prom 2708

Abstract: S82S2708F 82S2708 S82S2708 1024x8 PROM p-iris control
Contextual Info: MAY « 8 2 BIPOLAR M EM O RY DIVISION 8 192-BIT BIPOLAR PROM 1024 X 8 82S2708 (T.S.) PIN CONFIGURATION DESCRIPTION FEATURES The 82S2708 Is fie ld program m able, w hich means th a t custom patterns are im m ediate­ ly available by fo llo w in g the fu sin g p roce ­

memory EPROM 2708

Abstract: 2708 eprom Dc f2708 F2708 F2708-1
Contextual Info: F 2708 1024 x 8 UV Erasable PROM M O S M em ory P ro d u cts Logic Sym bol D escrip tio n T he F 2 7 0 8 is an 8 , 192-bit u ltra vio le t lig h t E ra sa b le and e le c tric a lly P rogram m able R ead O nly M em ory EPRO M m anufactured using th e Is o p la n a r n-channel

N82S141

Abstract: 82HS191 MCM10149 N82S137 74S301 N82LS181 CE23 MCM7620 N82HS191 N82S130
Contextual Info: MAY 1982 BIPOLAR M EM O RY DIVISION 16,384-BIT BIPOLAR PROM 2 0 4 8 x 8 _ 82HS191 (T.S.) DESCRIPTION PIN CONFIGURATIONS T h e 82H S 191 is fie ld p r o g r a m m a b le , w h ic h m e a n s th a t c u s to m p a tte rn s a re im m e d ia te ­

29661DC

Contextual Info: LSI Components PRODUCT SPECIFICATIONS 29000 Series Field-Programmable Read-Only Memories RAYTHEON Description Features R a y t h e o n ’ s 2 9 0 0 0 S e r ie s o f F ie l d P ro gra m m ab le R e ad-O nly M em ories in clu d e s m ost o f the p o p u la r PROM c o n fig u ra tio n s in

2N404 transistor

Abstract: CI 74112 diagram de ic lg 8838 logic diagram of ic 74112 design a5 to 32 line decoder 9624DC Germanium diode OA 182 pin diagram of ttl 74112 M9037 diagrams de ic lg 8838
Contextual Info: LSI Components PRODUCT SPECIFICATIONS •RAYTHEON] Field-Program m able Read-O nly Memories Description Features R a y t h e o n 's 2 9 0 0 0 S e r ie s o f F i e l d P rogram m ab le R ea d -O n ly M em ories in clu d e s m ost o f the p o p u la r PROM c o n fig u ra tio n s in