PROGRAMING Search Results

Contextual Info: ÛEROFLEX Cl HCJTTECHNOLOGY Features • 4 Low Power 512K x 8 FLASH Die in One MCM Package ■ TTL Compatible Inputs and CMOS Outputs ■ Access Times of 70, 90, 120 and 150nS ■ +5V Programing, 5V ±10% Supply ■ 100,000 Erase/Program Cycles ■ Low Power CMOS, Standby Current 1 mA

M28F256

Abstract: PDIP32 PLCC32
Contextual Info: M28F256 256 Kbit 32Kb x8, Bulk Flash Memory DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical

M28F101

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M28F101 1 Mbit 128Kb x8, Bulk Flash Memory 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES

2SF256

Abstract: M28F256A
Contextual Info: rz7 SCS-THOMSON M28F256A CMOS 256K 32K x 8 FLASH MEMORY * FAST ACCESS TIME: 100ns • LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10jas (PRESTO F ALGORITHM)

28F101

Abstract: 013d01 M28F101
Contextual Info: / = T SCS-THOMSON ^ 7 # ll ra®[l[L[iOT®R!lD i M28F101 1 Mb (128K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING • ■ ■ ■ ■ ■ ■ ■ ■ - 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10|iS typical

Contextual Info: / = T SGS-THOMSON M28F256 ^ 7 # » M g [* 0 J « ô [* S 256K (32K x 8, Bulk Erase) FLASH MEMORY DATA BRIEFING • ■ ■ • ■ ■ 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10us typical ELECTRICAL CHIP ERASE in 1s RANGE

M28F256A

Contextual Info: SGS-mOMSON RíilD g[S [l[L[I(gTriS(0 R!lD(gi M28F256A CMOS 256K (32K x 8, Chip Erase) FLASH MEMORY ABBREVIATED DATA FAST ACCESS TIME: 120ns LOW POWER CONSUMPTION - Standby Current: 200nA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10jis

M28F512

Contextual Info: rZ 7 SCS-THOMSON M28F512 512K 64K x 8, Bulk Erase FLASH MEMORY DATA B RIEFING • ■ ■ ■ ■ ■ 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10ns typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION

plcc32 pinout

Abstract: M28F101 PDIP32 PLCC32 TSOP32
Contextual Info: M28F101 1 Mb 128K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max

Contextual Info: LT3582/LT3582-5/LT3582-12 Boost and Single Inductor Inverting DC/DC Converters with Optional I2C Programing and OTP DESCRIPTION FEATURES n n n n n n n n n n Output Voltages: 3.2V to 12.775V and –1.2V to –13.95V LT3582 5V and –5V (LT3582-5) 12V and –12V (LT3582-12)

RFID reader source code

Abstract: 125KhZ RFID READER ATAN0019 ISO-11785 ATA5505-EK1 ATA5575 atmel jtag ice mkII ATA5577 ISO11784 crc ATA5505
Contextual Info: APPLICATION NOTE User Guide for ATA5505-EK1 Atmel ATAN0019 Features ● Evaluation Kit content and setup ● Quick Start Guide ● PC GUI Application instruction ● Programing Guide ● Troubleshooting Guide Description The Atmel ATA5505-EK1 evaluation kit provides a fast and easy way to explore Atmel’s

Contextual Info: —N ugent Header Programing HPS Series • 2-position programing shunt accepts .025" square post • Dual beam contact, .100" x .100" center-tocenter • Low cost system for bussing, programing and switch replacement • Center test probe for electrical inspection

cerberus uc 90q

Abstract: cerberus PIC1650-536 Autodialer ER1400 UC90Q ES4265 autodialer sms clare relay cup earom
Contextual Info: G tN tR A L 1NSI RUMENT PIC1650-536 TELEVIEW Autodialer/Terminal Identifier FEATURES N on-volatile storage of 4 telephone num bers of 16 d igits 10 ips loop disconnect dialing Non-volatile storage of Identity Code of 16 digits Full remote programing capability

SPR016

Abstract: SP0256
Contextual Info: .IN I RAI INSIRUMI IVI SPR016 16,384 Bit Serial Read Only Memory READ ONLY MEMORY FEATURES • ■ ■ ■ ■ 2048 x 8 Bit ROM Organization Serial In/Parallel Out Shift Register Single Supply Voltage +5V Interfaced to SP0256 Totally Automatic Custom Programing

ram 8416

Contextual Info: FAST A C C E S S - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout

M28F512

Abstract: PDIP32 PLCC32 1N914 m28f512-25
Contextual Info: M28F512 512 Kbit 64Kb x8, Bulk Flash Memory 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES

SMD A1S

Abstract: ACT-F512K8
Contextual Info: i * “ / * \ * Ï V “* 1' “ S" w?-1 % , H.| m » . 1 M— • u i u ÛEROFLEX CIRCUIT TECHNOLOGY Features • Low Power Monolithic 512K x 8 FLASH ■ TTL Compatible Inputs and CMOS Outputs ■ Access Times of 90,120 and 150nS ■ +5V Programing, 5V ±10% Supply

5962-9461202H

Abstract: ACT-F512K32N-070P7Q MCM NAND ACT-F512K32 5962-9461203HXX act-f512k32n-070P7
Contextual Info: £ L 2 K 3 2 -I4 j|g h •i j. ir—• I n A s ^i o i P eed . I j.ï ÛEROFLEX CIRCUIT TECHNOLOGY Features ■ 4 Low Power 512K x 8 FLASH Die in One MCM Package ■ TTL Compatible inputs and CMOS Outputs ■ Access Times of 70, 90, 120 and 150nS ■ +5V Programing, 5V ±10% Supply

M28F101

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M28F101 1 Megabit 128K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE

M28F101

Abstract: PDIP32 PLCC32 TSOP32 0625E-1
Contextual Info: SGS-TtiOMSON M28F101 G fflD S Î3 (m i(g T ïïM M (g i 1 Megabit (128K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 70ns ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10^is

CQFP 52 lead

Abstract: footprint cqfp 68 ACT-F4M32A
Contextual Info: ACT–F4M32A High Speed 128 Megabit Sector Erase FLASH Multichip Module Advanced CIRCUIT TECHNOLOGY Features www.aeroflex.com/act1.htm • 8 Low Voltage/Power AMD 2M x 8 FLASH Die in One MCM Package ■ Overall Configuration is 4M x 32 ■ +5V Power Supply / +5V Programing Operation

M28F101

Abstract: PDIP32 PLCC32 TSOP32 SRAM 10ns
Contextual Info: M28F101 1 Mb 128K x 8, Chip Erase FLASH MEMORY 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max 10,000 ERASE/PROGRAM CYCLES

M28F512

Abstract: PDIP32 PLCC32
Contextual Info: M28F512 512 Kbit 64Kb x8, Bulk Flash Memory DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical

Contextual Info: £yjSGS-THOMSON DWIllLI DW!lll©i M28F101 1 Mb 128K x 8, Chip Erase FLASH MEMORY • 5V ±10% SUPPLY VOLTAGE ■ 12V PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMING TIME: 1Ojas typical ■ ELECTRICAL CHIP ERASE in 1s RANGE ■ LOW POWER CONSUMPTION