4715B Search Results

AO18

Abstract: 025L-2 ACT-PS512K8
Contextual Info: . I • . : - : •1 tin IÌAiv Ì ■ !" ■T - Ti ’j r P I/* < M y it Id OTf/ Vlrll Jl lU llth 4 t1 1 Q/ pdtJrlr ii i l l I t : V 1 1 Preliminary 4 :m m m■ r M Plastic Path Features ■ Low Power Monolithic CMOS 512K x 8 SRAM Q eroflex ■ Operating Tem perature Range

ACT5260

Abstract: ACT5260PC-P10-POD R4400 R4400PC R4700 R5000 E3199
Contextual Info: A i r h i 260P c -F*10*•P G D ‘2 l-K % Aj •3iDte iJL 1 L_r [_ □ J The Aeroflex ACT5260PC-P10-POD adapts a QED RM5260 MIPS microprocessor to an R4400PC, R4600 or R4700 processor’s 179 pin PGA footprint. This product allows the evaluation of the latest MIPS IV 5XXX series performance in existing 4XXX series hardware.

DESC 5962-9471604H8C

Abstract: smd 37e ACT-F128K32 060P7Q
Contextual Info: k4 *r ""HiOO toL I/i1 -hkVr 2-t „I„I-!i o\ r —iHWBijab It1MlilWïf«Ij-m J Itlit1 ; — ÛEROFLEX CIRCUIT TECHNOLOGY Features • 4 Low Power 128K x 8 FLASH Die in One MCM Package ■ Organized as 128K x 32 • User Configurable to 256K x 16 or 512K x 8

ACT-F1M32

Contextual Info: - - — — — A GT-F4M 3 » H*UT£M1 Z À U A 2 £ l 3 2 IMeàéMitl -E\ à z a ¿ ¿ u s a 4-à à ï * t i W îT ïîW IT j" E — — y !£ UTJ I B I ÛEROFLEX CIRCUIT TECHNOLOG Y w w w .aero flex.com /act1 .htm Features • ■ ■ ■ ■

k79 w8

Contextual Info: :3;3 <= ;>)?(@A)* 635B=)!-! !"#$%&'()*+,-)./)01/')234(5)67819( M''9CB3;C7.4 • J.L"(5%,')+,-M"L+.-/5)*"M"+.A-EJR;@H :(4B5C';C7. $

UG34

Abstract: Disc PDR70 LBX10-59 4711b UHX6-59 ug343 UHX8-59W
Contextual Info: 5.925 - 6.425 GHz* Type Number Diameter ft m LBX LBX6-59* LBX8-59* LBX10-59* LBX12-59* RPE Number(s) Regulatory Compliance* Low Gain, dBi Mid-Band 38.3 40.9 42.6 44.4 38.7 41.3 43.0 44.8 Top Beamwidth Degrees Cross Pol. Disc., dB 39.0 41.6 43.3

AD7146

Abstract: 0145H sus material 304 sys 152 R4000 R4400 R4400PC ad2257
Contextual Info: The Aeroflex "RISC TurboEngine"'9 A MIPS R4400 RISC Microprocessor Multichip M odule Preliminary Data Sheet, use with "MIPS R4000 Microprocessor Users Manual"® MIPS 1993 Aeroflex Circuit Technology 35 South Service Road, Plainview NY 11803 Tel:(516) 694-6700, Fax:(516) 694-6715

SMD A1S

Abstract: ACT-F512K8
Contextual Info: i * “ / * \ * Ï V “* 1' “ S" w?-1 % , H.| m » . 1 M— • u i u ÛEROFLEX CIRCUIT TECHNOLOGY Features • Low Power Monolithic 512K x 8 FLASH ■ TTL Compatible Inputs and CMOS Outputs ■ Access Times of 90,120 and 150nS ■ +5V Programing, 5V ±10% Supply

5962-9461202H

Abstract: ACT-F512K32N-070P7Q MCM NAND ACT-F512K32 5962-9461203HXX act-f512k32n-070P7
Contextual Info: £ L 2 K 3 2 -I4 j|g h •i j. ir—• I n A s ^i o i P eed . I j.ï ÛEROFLEX CIRCUIT TECHNOLOGY Features ■ 4 Low Power 512K x 8 FLASH Die in One MCM Package ■ TTL Compatible inputs and CMOS Outputs ■ Access Times of 70, 90, 120 and 150nS ■ +5V Programing, 5V ±10% Supply

Contextual Info: PANASONIC INDL/ELEK -CIC1 t,b J e | bT3SñSE 000S171 O | ~ 1 CMOS Logic MN4000B Series 6 9 3 2 8 52 PANASONIC INDL,ELECTRONIC 11 66C 051Î1 : * MN40175B/MN40175BS Ö T -4 < 5 ,- ö 7 - to S M N 40175B /M N 40175B S Quad D-Type Flip-Flops • D escription The MN40175B/S have quad D*type flip-flop which have common

SF128

Abstract: fl 014
Contextual Info: — — I— I 1 1 1 !— I 1 1 1 1 1 1 1 1 1 I I Z Z Z Z ACT—SF128K16 High Speed = -I I I I I— — i— I— I— I— I— I— I— I— I— I— I— I— I— I— I— I— I— I— 128Kx16 SRAM/FLASH Multichip Module I I I I I I I I I I I

ACT5260

Abstract: R4700 R5000 smd code F18
Contextual Info: 4715b 000043b I Û47 t T ACT5260 64-Bit Superscaler Microprocessor r eR?U S flta rlie d QED RM5260 mlcroproC9»sor i n ,igi iQcnp suDerscalar QED RISCMark • m to o p ^ e s S S T S a n issue one Integer end one flo a tin g -p o in t In s tru c tio n p e r c y c le

sMD .v05

Abstract: smd V05 et4-1 i0747
Contextual Info: Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55nS Access Times ■ Full Commercial and Industrial -55°C to +125°C Temperature Range

WT4 smd

Abstract: SMD A1S a1s smd SAMSUNG SRAM LL-061 ACT-S128K32
Contextual Info: I T r-t;i ix-r-mh1[•u*=i * • Ji r a m smsst : m i j, ■ m m trrsa m s i Features ■ 4 Low Power IDT or Samsung CMOS 128K x 8 SRAMs in one MCM ■ Overall configuration as 128K x 32 ■ Input and Output TTL Compatible ■ 17, 20, 25,35, 45 & 55ns Access Times, 15ns Available by Special Order

a1s smd

Abstract: smd code a12 smd code A1s ACT-S512K8
Contextual Info: « , m m - m - , -r m » „. 4 - -• _ _ - I T T atm jjhpgdBSifljliS r r m m T 1 :< f :i m it j r ii .* l l l l / 'i n 11 I L M 1 ■à* mmmm «Mi .T ~ _ m i m z t t r x 1 i * 4 1 ^ fr * - Features ■ ' ' SB i l 111 l a B s k K ■> >«. •