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KM68V4000

Contextual Info: KM68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The Process Technology : 0.4 um CMOS Organization : 512K x 8 Power Supply Voltage : 3.3 +/- 0.3V * Low Data Retention Voltage : 2V Min

WH-5

Contextual Info: Resistors Make Possible Aluminium Housed Aluminium Housed Wirewound Resistors Wirewound Resistors WH Series WH Series • • • • • • High power dissipation up to 300W High power dissipation up to 300W AllAll welded construction welded construction

Contextual Info: KM68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION >Process Technology : 0.4 um CMOS The >Organization : 512K x 8 SAMSUNG'S advanced CMOS process technology. KM68V4000A family is fabricated by >Power Supply Voltage : 3.3 +/- 0.3V

MA12 transistor

Contextual Info: WILLAS FM120-M+ MMBT5401LT1 THRU High MOUNT Voltage Transistor FM1200-M+ 1.0A SURFACE SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

hioki 3220

Contextual Info: S FC B 3015H C -S eries 0 Dim ensions & Recom m ended Land Pattern [Unit : mm] «BO TTO NI V IE W » 0 FE A TU R E S > Low est h e ig ht 1 .0m m ~ 5.0m m in th is package fo o tp rin t. > F requ ency range up to 5.0 Mhz. > Low est D C R /uH , in th is package size.

hioki 3220

Contextual Info: S FC B 3012H C -S eries 0 Dim ensions & Recom m ended Land Pattern [Unit : mm] «BOTTONI VIEW» 0 FE A TU R E S > Low est h e ig ht 1 .0m m ~ 5.0m m in th is package fo o tp rin t. > F requ ency range up to 5.0 Mhz. > Low est D C R /uH , in th is package size.

Contextual Info: Aluminium Housed Wirewound Resistors Aluminium Housed Wirewound Resistors WH Series • High power dissipation up to 300W Series construction ·WH All welded ·• Suitable for severe environments High power dissipation up to 300W ·• Designed forconstruction