PROCESSES Search Results

Contextual Info: UT54 ACS 153/UT54ACTS153 Radiation-Hardened Quadruple 4 to 1 Multiplexers PINOUTS FEATURES • 16-Pin D IP Top View 1.2n radiation-hardened CMOS - Latchup immune High speed Low power consumption Single 5 volt supply Available QM L Q o r V processes Flexible package

TY 2016 thyristor

Abstract: Toshiba thyristors TOSHIBA Thyristor
Contextual Info: 5. R ELIA BILITY OF SEM ICONDUCTOR 5.1 to pro ducts are evaluated and when quality and reliability are confirm ed, next step o f the trial mass production proceeds. At the trial mass production step, stability of m anufacturing processes is evaluated p repo n­

XC6502

Contextual Info: XC6502 Series ETR0336-001 Low Power Supply LDO Regulators •GENERAL DESCRIPTION The XC6502 series are highly precise, low noise, positive voltage LDO regulators manufactured using CMOS processes. The series achieves very low supply current, 1.0 A TYP. and consists of a reference voltage source, an error amplifier,

smd diode ua

Abstract: transistor smd marking 2SC3648
Contextual Info: Transistors SMD Type High-Voltage Switching Applications 2SC3648 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

DFN1310H4-6

Contextual Info: BC847CDLP NEW PRODUCT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Ultra Low Profile Package

Contextual Info: VLMC310. Vishay Semiconductors Low Current SMD LED PLCC-2 FEATURES • SMD LED with exceptional brightness • Compatible with automatic placement equipment • EIA and ICE standard package • Compatible with infrared, vapor phase and wave solder processes according

2DC4672

Abstract: sot89 "NPN TRANSISTOR"
Contextual Info: 2DC4672 NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Complementary PNP Type Available 2DA1797

Contextual Info: CRCW0201 e3 www.vishay.com Vishay Lead Pb -free Commodity Thick Film Chip Resistors FEATURES • High volume product suitable for commercial applications • Pure tin solder contacts on Ni barrier layer provides compatibility with lead (Pb)-free and lead containing soldering processes

APT54GA60B

Abstract: APT54GA60BD30 APT54GA60SD30 MIC4452 SD30
Contextual Info: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise

WK202070

Abstract: WR40414 wk20207 WR50617 wk4 4r7 MARKING WK4 WK2020 diode WR5 metal oxide resistors IEC60294
Contextual Info: WK / WR Vishay Draloric Metal Oxide Resistors, High Power FEATURES • Rugged metal oxide film • Lead Pb -free solder contacts • Pure tin plating provides compatibility with Lead (Pb)-free and lead containing soldering processes • Compatible with "Restriction of the use of Hazardous

APT36GA60B

Abstract: APT36GA60S MIC4452 c 1853
Contextual Info: APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -2 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 47 D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

prtr5v0u6s

Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
Contextual Info: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years

APT28GA60BD15

Abstract: APT6017LLL MIC4452
Contextual Info: APT28GA60BD15 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

APT28GA60K

Abstract: MIC4452
Contextual Info: APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

APT68GA60B

Abstract: APT68GA60S MIC4452
Contextual Info: APT68GA60B APT68GA60S 600V High Speed PT IGBT APT68GA60S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

BI resistor network

Abstract: PLL650-05SC PLL650-05SC-R
Contextual Info: PLL650-05 Low EMI Network LAN Clock FEATURES • • • • • • • Full CMOS output swing with 40-mA output drive capability. 25-mA output drive at TTL level. Advanced, low power, sub-micron CMOS processes. 25MHz fundamental crystal or clock input. 3 fixed outputs of 25MHz, 75Mhz and 125Mhz with

DEVICE MARKING CODE table

Abstract: BZX84C47 BZX84C43 301 marking code sot-23 BZX84C43-7 Marking Code KEY zener diode marking code 30 Zener Diode SOT-23 marking B BZX84C51 J-STD-020A
Contextual Info: BZX84C43 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE SPICE MODELS: BZX84C43 BZX84C47 BZX84C51 Features • · · · Planar Die Construction 350mW Power Dissipation Zener Voltages from 43V - 51V Ideally Suited for Automated Assembly Processes SOT-23 A · · ·

5962F9764101VEA

Abstract: 5962F9764101VEC 5962F9764101VXC GDIP1-T16 HS0-6254RH-Q HS1-6254RH HS-6254RH HS9-6254
Contextual Info: HS-6254RH Data Sheet August 1999 Radiation Hardened Ultra High Frequency NPN Transistor Array The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides

draloric ska

Abstract: SXA0933 SKA Vishay SXA0617 RE53 SXA0411 10R SXA0617 resistor 1k 0617 SXA0922 RC draloric
Contextual Info: SXA Vishay Draloric Metal Oxide Resistors, Standard FEATURES • Rugged metal oxide film • Lead Pb -free solder contacts • Pure tin plating provides compatibility with lead (Pb)-free and lead containing soldering processes • Compatible with "Restriction of the use of Hazardous

MRS25

Abstract: resistor MRS25 12NC ordering code vishay Vishay MRS25 MRS16 MRS2500 MRS25000
Contextual Info: MRS16, MRS25 Vishay BCcomponents Lead Pb -Free Professional Leaded Resistors FEATURES • • • • Professional resistors in small outlines Low noise. Lead (Pb)-free solder contacts Pure tin plating provides compatibility with lead (Pb)-free and lead containing soldering processes

D2200

Contextual Info: Ordering number : EN 3 1 5 1 □ 2SB1451/2SD2200 N o . 3151 SA \Y O PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications F e a tu re s - Surface mount type device making the following possible -Reduction in the number of m anufacturing processes for 2SB1451/2SD2200-applied equipment

300WV

Abstract: dm15 capacitor DM15 mica Z20h
Contextual Info: OTHER PRODUCTS Ceramic Substrate <Our high precision thick film printing technology where Ag-Pd based conductors, low high-frequency loss Ag-Pt based conductors and C u based conductors can be printed on 9 6 % substrates> Short lead time: A n integrated production system encompassing all processes from pattern designing to product completion permits engineering

Vdss 1500V

Abstract: sanyo horizontal transistor
Contextual Info: 6. UH Ultrahigh Voltage Series UH Series Features and Principal Processes SANYO has developed the UH process and HVMG II (High-Voltage Multi-Gate II) structure employing the features of the ultrahigh withstand voltage bipolar transistor UHVP (Ultrahigh Voltage Planar) process in device

osc xtal 6MHZ

Abstract: 74FXX BI resistor network XTAL 50MHZ PLL650-06SC PLL650-06SC-R
Contextual Info: PLL650-06 Network LAN Clock FEATURES • • • • • Full CMOS output swing with 40-mA output drive capability. 25-mA output drive at TTL level. Advanced, low power, sub-micron CMOS processes. 25MHz fundamental crystal or clock input. One output fixed at 50MHz