PROCESS 88 Search Results

1N5806

Abstract: 1N5802 CMR3U-01 CPD17 UES1101 UES1106
Contextual Info: PROCESS CPD17 Ultra Fast Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 88 x 88 MILS Die Thickness 14 MILS Anode Bonding Pad Area 69 x 69 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization

Contextual Info: Philips Semiconductors Surface Mounted Semiconductors General QUALITY • In-line quality assurance to m onitor process reproducibility during m anufacture and initiate any necessary corrective action. C ritical process steps are 100% under statistical process control

omron k3nx operating manual

Abstract: OMRON OC 222 CH K3NX-AD1A omron k3nx K3NX-VD2A K3NX-VD1A omron* AOI K3NX
Contextual Info: Process Meter omRon Process Meter omRon K3NX Process Meter Operation Manual Produced January 1998 iv Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator and only for the purposes described in this manual.

Yokogawa differential pressure capillary

Contextual Info: Process chemical seals Series D900 - D920 Various types of ISO- and ANSI-compliant flanges available on request High temperature applications up to 400°C Compatible with process pressure transmitters D9xx process chemical seals are specially designed to equip various measu‑

philips components LED

Abstract: SAA8116 UPA1021 cmos IMAGE SENSOR I2C interface ic rgb to vga CMOS sensor VGA 160X120 VGA camera i2c IN PROCESS CONTROL format micro cmos camera
Contextual Info: The combination of Philips Semiconductors’ in-depth experience in digital imaging and process technologies has led to the development of a dedicated process for cost-effective consumer digital imaging applications. Called SeeMOS, this innovative and unique optimized CMOS process allows Philips

Contextual Info: NJW1175 AUDIO PROCESSOR with BBE ViVA+ • GENERAL DESCRIPTION The NJW1175 is a TV audio processor with BBE ViVA+ High Definition 3D Sound process. BBE's traditional sound clarity enhancement technology is combined with the Mach3BASS process to bass enhancement and the new ViVA 3D process to

0.7 um CMOS process parameters

Abstract: 30X30
Contextual Info: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services 0.6µm CMOS Process Standard Features ❖ ❖ ❖ ❖ Standard Layout Rules and Process Parameters Single or double poly Double metal

resistor 1k

Abstract: 30X30
Contextual Info: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services 1.2µm CMOS Process Standard Features ❖ ❖ ❖ ❖ ❖ Standard Layout Rules and Process Parameters UT1X Stepper Single or double poly

vishaysiliconix

Abstract: JM38510 7705201XA JM38510/19007BEA 7705201ea 77052012A dg504al 5962-9204201MEA DG507AAZ/883 DG508AAK/883
Contextual Info: DV 2 August 2002 PCN02012 Dear Vishay-Siliconix Customer: As you are aware, the Vishay-Siliconix metal gate fabrication process was identified as obsolete in June, 2000. This process was replaced with the improved silicon gate process. We have been able to continue to provide metal gate military and commercial

30X30

Abstract: SiCr resistor
Contextual Info: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services 3.0µm N-Well CMOS Process Standard Features ❖ ❖ ❖ ❖ Standard Layout Rules and Process Parameters UTIX Stepper Single or double poly

resistor 1K

Abstract: 30X30 70210
Contextual Info: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services 2.0µm N-Well CMOS Process Standard Feature ❖ ❖ ❖ ❖ Standard Layout Rules and Process Parameters UT1X Stepper Single or double poly

30X30

Abstract: 0.7 um CMOS process parameters
Contextual Info: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services 4.0µm P-Well CMOS Process (For Analog and Mixed Signal Use) Standard Features ❖ ❖ ❖ ❖ Standard Layout Rules and Process Parameters

ids 2560

Abstract: SiCr 30X30 SiCr resistor
Contextual Info: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services 3.0µm P-Well CMOS Process Standard Features ❖ ❖ ❖ ❖ Standard Layout Rules and Process Parameters UTIX Stepper Single or double poly

Contextual Info: Temic S e m i c o n d u c t o r s Quality Information TEMIC’s Continuous Improvement Activities • • T EM IC qualifies m aterials, processes and process changes • T EM IC uses Process FM EA Failure M ode and Effects Analysis for all processes. Process and

Sattline

Abstract: SattLine Workstation Maxi license comli siemens sattbus 3964R allen bradley PID controller Allen-Bradley rack SINEC H1 3964R protocol sattline journal
Contextual Info: SattLine Object-oriented Process Automation SattLine is an advanced, object oriented, distributed industrial control system. The system includes WorkStations and Process Controllers communicating with each other over Ethernet. The SattLine concept realises a fully

telefunken ta 400 specification

Abstract: marking CBW
Contextual Info: VISHAY Vishay Telefunken T Quality Informations Vishay Telefunken’s Continuous Improvement Activities Vishay Telefunken Tools for Continuous Improvement • • Vishay Telefunken qualifies materials, processes and process changes • Vishay Telefunken uses Process FMEA Failure

Contextual Info: Process Colors Series 880 and 900 Instructions for Use Information Folder 1.8 December 2013 Replaces Information Folder 1.8 dated July 2010 Description 3M Process Colors Series 880I, 880N and 990 have been developed to provide maximum durability, color-fastness and adhesion to reflective sheeting when used in the processing of traffic control signs.

XCS200 FPGA

Contextual Info: HXILINX XC5200 Series Field Programmable Gate Arrays December 10, 1997 Version 5.0 Product Specification Features • • Low-cost, process-optimized, register/latch rich, SRAM based reprogrammable architecture - 0.5pm three-layer metal CMOS process technology

Contextual Info: TB67S142FTG Toshiba BiCD Process Integrated Circuit Silicon Monolithic TB67S142FTG Clock controlled Unipolar stepping motor driver The TB67S142FTG is a Clock controlled PWM chopping type 2 phase unipolar stepping motor driver. Using the BiCD process, the TB67

Contextual Info: TB67S149FTG Toshiba BiCD Process Integrated Circuit Silicon Monolithic TB67S149FTG Clock controlled Unipolar stepping motor driver The TB67S149FTG is a Clock controlled PWM chopping type 2 phase unipolar stepping motor driver. Using the BiCD process, the TB67

FET 4900

Abstract: CP CLARE 4367 MOS FET SOT-223 MOS FET SOT-223 ON CPC5602C CPC5602CTR CPC5604A CPC5610A CPC5611A
Contextual Info: CPC5602C N Channel Depletion Mode FET Description The CPC5602C is an “N” channel depletion mode Field Effect Transistor FET that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage

dupont 9450

Abstract: 77274-006 MAX 77693 77030-001 vertical pwb mounting with 68 pin male connector ASTM 240
Contextual Info: • Superior design and Statistical Process Control SPC assure high reliability. • High normal force of 75 grams per beam approximately twice that of connectors at a comparable insertion force. This critical parameter is directly measured during the manufacturing process. Results

U3040AK01

Abstract: U3040AK02 U3040AK03 electronic vehicle stability control U3040AK08 sfc 2111
Contextual Info: Agilent Yellowstone 3.0 Automated Test Process Center Yellowstone Overview A Decade of Proven Uptime and Cost Savings Agilent Technologies Yellowstone 3.0 is an automated test process center for high-mix, low-volume manu-facturing of complex electronic products used in

Contextual Info: FDMS86201 N-Channel Shielded Gate PowerTrench MOSFET 120 V, 49 A, 11.5 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been