POWERTAP Search Results

Contextual Info: MBRP40045CTL POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

MBRP20030CTL

Abstract: b2003
Contextual Info: MOTOROLA Order this document by MBRP20030CTL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MBRP20030CTL POWERTAP II SWITCHMODE Power Rectifier Motorola Preferred Device The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following

Contextual Info: MOTOROLA Order this document by MURP20020CT/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MURP20020CT Designer's Ultrafast Power Rectifier ULTRAFAST RECTIFIER 200 AMPERES 200 VOLTS POWERTAP II Package Features mesa epitaxial construction with glass passivation. Ideally suited

MURP20020CT

Abstract: MURP20040CT 200-ATC
Contextual Info: MURP20020CT, MURP20040CT Preferred Devices POWERTAPt II Ultrafast SWITCHMODEt Power Rectifiers These state−of−the−art POWERTAP II Ultrafast SWITCHMODE power rectifiers are designed for use in switching power supplies, inverters, and as free wheeling diodes.

2n2222 motorola

Abstract: rectifier data Schottky Power Rectifier Diode Marking 1e
Contextual Info: MOTOROLA Order this document by MBRP30060CT/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MBRP30060CT Designer's Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIER 300 AMPERES 60 VOLTS POWERTAP II Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon

Contextual Info: MBRP20035L SWITCHMODE Schottky Power Rectifier POWERTAPE III Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRP30035L SWITCHMODE Schottky Power Rectifier POWERTAPE III Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MOTOROLA Order this document by M B RP20030CTL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M BRP20030CTL SWITCHMODE™ S chottky Pow er R ectifier SCHOTTKY BARRIER RECTIFIER 200 AMPERES 30 VOLTS POWERTAP™ II Package . . . employing the Schottky Barrier principle in a large area m etal-to-silicon

2n22222

Abstract: 20 mf 25 metal rectifier diode
Contextual Info: MBRP20060CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: http://onsemi.com • Dual Diode Construction —

Contextual Info: MBRP30060CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output

Contextual Info: MBRP30045CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output

Contextual Info: MBRP40045CTL POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: http://onsemi.com Features: • Dual Diode Construction — •

Contextual Info: M OTOROLA Order this document by MBRP20060CT/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MBRP20060CT SW ITCH MODE™ Schottky Power R ectifier SCHOTTKY BARRIER RECTIFIER 200 AMPERES 60 VOLTS POWERTAP™ II Package . . . employing the Schottky Barrier principle in a large area m e tal-to-silicon

Contextual Info: MOTOROLA Order this document by MURP20040CT/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M U RP20040CT SW ITCH MODE™ U ltrafas t Power R ectifier ULTRAFAST RECTIFIER 200 AMPERES POWERTAP™ II Package Features mesa epitaxial construction with glass passivation. Ideally suited

MSRP10040

Contextual Info: MSRP10040 SWITCHMODE Soft Recovery Power Rectifier POWERTAP III Package State of the art geometry features epitaxial construction with glass passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and

MBRP30060CT

Contextual Info: MBRP30060CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output

MBRP40030CTL

Contextual Info: MBRP40030CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction –

Ultrafast RECTIFIER DIODES ON Semiconductor DATA

Abstract: 1N5817 2N2222 2N6277 MURP20040CT URP20040CT
Contextual Info: MOTOROLA Order this document by MURP20040CT/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MURP20040CT Designer's Ultrafast Power Rectifier ULTRAFAST RECTIFIER 200 AMPERES POWERTAP II Package Features mesa epitaxial construction with glass passivation. Ideally suited

MSRP10040

Contextual Info: MOTOROLA Order this document by MSRP10040/D SEMICONDUCTOR TECHNICAL DATA Product Preview SWITCHMODE Soft Recovery Power Rectifier MSRP10040 POWERTAP III Package State of the art geometry features epitaxial construction with glass passivation and metal overlay contact. Ideally suited for low voltage, high frequency

Contextual Info: MBRP60035CTL Preferred Device POWERTAPt II SWITCHMODEt Power Rectifier This state-of-the-art SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com Features • • • • • • • • Dual Diode Construction; May Be Paralleled for Higher Current Output

357C-03

Abstract: MBRP60035CTL motorola rectifier
Contextual Info: MOTOROLA Order this document by MBRP60035CTL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MBRP60035CTL POWERTAP II SWITCHMODE Power Rectifier Motorola Preferred Device The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features:

MBRP20045CT

Contextual Info: MBRP20045CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — • • •

Contextual Info: MBRP30045CT Preferred Device POWERTAPt II SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com Features • Dual Diode Construction − May Be Paralleled for Higher Current

Contextual Info: MBRP20045CT Preferred Device POWERTAPt II SWITCHMODEt Power Rectifier This state−of−the−art device uses the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com Features • Dual Diode Construction; May Be Paralleled for Higher Current