Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    POWERPAK CHIPFET SINGLE Search Results

    POWERPAK CHIPFET SINGLE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AV-THLIN2RCAM-005
    		Amphenol Cables on Demand Amphenol AV-THLIN2RCAM-005 Thin-line Single RCA Coaxial Cable - RCA Male / RCA Male (Coaxial Digital Audio Compatible) 5ft PDF
    FO-9LPBMTRJ00-001
    		Amphenol Cables on Demand Amphenol FO-9LPBMTRJ00-001 MT-RJ Connector Loopback Cable: Single-Mode 9/125 Fiber Optic Port Testing .1m PDF
    CS-SASSDP8282-001
    		Amphenol Cables on Demand Amphenol CS-SASSDP8282-001 29 position SAS to SATA Drive Connector Single Data Lane Cable 1m PDF
    FO-DLSCDLLC00-002
    		Amphenol Cables on Demand Amphenol FO-DLSCDLLC00-002 SC-LC Duplex Single-Mode 9/125 Fiber Optic Patch Cable (OFNR Riser) - 2 x SC Male to 2 x LC Male 2m PDF
    FO-DLSCDLLC00-001
    		Amphenol Cables on Demand Amphenol FO-DLSCDLLC00-001 SC-LC Duplex Single-Mode 9/125 Fiber Optic Patch Cable (OFNR Riser) - 2 x SC Male to 2 x LC Male 1m PDF

    POWERPAK CHIPFET SINGLE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: New Product Si5936DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.030 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 PowerPAK ChipFET Dual • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®


    Original     		Si5936DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si5936

    Abstract: S12 MARKING CODE DIODE
    Contextual Info: New Product Si5936DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.030 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 PowerPAK ChipFET Dual • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®


    Original     		Si5936DU Si5936DU-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 si5936 S12 MARKING CODE DIODE PDF

    Contextual Info: New Product Si5936DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.030 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 PowerPAK ChipFET Dual • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®


    Original     		Si5936DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product Si5936DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.030 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 PowerPAK ChipFET Dual • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®


    Original     		Si5936DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    PowerPAK ChipFET Single

    Contextual Info: Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK ChipFET® Single 0.225 0.009 0.350 (0.014) 0.650 (0.026) 0.200 (0.008) 0.300 (0.012) 0.300 (0.012) 0.100 (0.004) 1.500 (0.059) 1.900 (0.075) 0.250 (0.010) 0.500 (0.020) 0.350 (0.014)


    Original     		21-Jan-08 PowerPAK ChipFET Single PDF

    Contextual Info: Si5415AEDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)a 0.0096 at VGS = - 4.5 V - 25 - 20 0.0132 at VGS = - 2.5 V - 25 0.0220 at VGS = - 1.8 V -7 Qg (Typ.) 43 nC PowerPAK ChipFET Single


    Original     		Si5415AEDU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si5415AEDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)a 0.0096 at VGS = - 4.5 V - 25 - 20 0.0132 at VGS = - 2.5 V - 25 0.0220 at VGS = - 1.8 V -7 Qg (Typ.) 43 nC PowerPAK ChipFET Single


    Original     		Si5415AEDU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si5415AEDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)a 0.0096 at VGS = - 4.5 V - 25 - 20 0.0132 at VGS = - 2.5 V - 25 0.0220 at VGS = - 1.8 V -7 Qg (Typ.) 43 nC PowerPAK ChipFET Single


    Original     		Si5415AEDU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si5415AEDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)a 0.0096 at VGS = - 4.5 V - 25 - 20 0.0132 at VGS = - 2.5 V - 25 0.0220 at VGS = - 1.8 V -7 Qg (Typ.) 43 nC PowerPAK ChipFET Single


    Original     		Si5415AEDU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product Si5418DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0145 at VGS = 10 V 12 0.0185 at VGS = 4.5 V 12 VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK ChipFET Single • Halogen-free • TrenchFET Power MOSFET


    Original     		Si5418DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product Si5418DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0145 at VGS = 10 V 12 0.0185 at VGS = 4.5 V 12 VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK ChipFET Single • Halogen-free • TrenchFET Power MOSFET


    Original     		Si5418DU Si5418DU-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: New Product Si5418DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0145 at VGS = 10 V 12 0.0185 at VGS = 4.5 V 12 VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK ChipFET Single • Halogen-free • TrenchFET Power MOSFET


    Original     		Si5418DU Si5418DU-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product Si5418DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0145 at VGS = 10 V 12 0.0185 at VGS = 4.5 V 12 VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK ChipFET Single • Halogen-free • TrenchFET Power MOSFET


    Original     		Si5418DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si5418DU-T1-GE3

    Abstract: si5418
    Contextual Info: New Product Si5418DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0145 at VGS = 10 V 12 0.0185 at VGS = 4.5 V 12 VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK ChipFET Single • Halogen-free • TrenchFET Power MOSFET


    Original     		Si5418DU 11-Mar-11 Si5418DU-T1-GE3 si5418 PDF

    Contextual Info: New Product Si5418DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0145 at VGS = 10 V 12 0.0185 at VGS = 4.5 V 12 VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK ChipFET Single • Halogen-free • TrenchFET Power MOSFET


    Original     		Si5418DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si5418DU-T1-GE3

    Contextual Info: New Product Si5418DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0145 at VGS = 10 V 12 0.0185 at VGS = 4.5 V 12 VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK ChipFET Single • Halogen-free • TrenchFET Power MOSFET


    Original     		Si5418DU 18-Jul-08 Si5418DU-T1-GE3 PDF

    si5429

    Abstract: marking G2 Si5429DU
    Contextual Info: Si5429DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.015 at VGS = - 10 V - 12a 0.022 at VGS = - 4.5 V - 12a • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package


    Original     		Si5429DU Si5429DU-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si5429 marking G2 PDF

    Contextual Info: Si5429DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.015 at VGS = - 10 V - 12a 0.022 at VGS = - 4.5 V - 12a • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package


    Original     		Si5429DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si5429DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.015 at VGS = - 10 V - 12a 0.022 at VGS = - 4.5 V - 12a • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package


    Original     		Si5429DU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    PowerPAK ChipFET Single

    Contextual Info: New Product Si5476DU Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 60 0.034 at VGS = 10 V 12 0.041 at VGS = 4.5 V 12 Qg (Typ.) 10.5 nC PowerPAK ChipFET Single 1 2 3 D D Lot Traceability and Date Code 4 G


    Original     		Si5476DU Si5476DU-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PowerPAK ChipFET Single PDF

    Si5485DU

    Abstract: Si5485DU-T1-GE3
    Contextual Info: Si5485DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.025 at VGS = - 4.5 V - 12a 0.042 at VGS = - 2.5 V a - 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package


    Original     		Si5485DU Si5485DU-T1-GE3 18-Jul-08 PDF

    Contextual Info: Si5485DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.025 at VGS = - 4.5 V - 12a 0.042 at VGS = - 2.5 V a - 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package


    Original     		Si5485DU Si5485DU-T1-electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si5485DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.025 at VGS = - 4.5 V - 12a 0.042 at VGS = - 2.5 V a - 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package


    Original     		Si5485DU Si5485DU-T1-electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si5484DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.016 at VGS = 4.5 V 12 VDS (V) 20 0.021 at VGS = 2.5 V • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package


    Original     		Si5484DU Si5484DU-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF