POWER TRANSISTOR GAAS Search Results

DIE CHIP 51 FET

Contextual Info: EC4790 Wide Band Power FET GaAs Field Effect Transistor Description The EC4790 device,available in chip form, is a power GaAs Field Effect Transistor, designed for wideband oscillator and amplifier applications, up to 18GHz Individual via hole connection is made

SGA8543Z-EVB2

Abstract: marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P
Contextual Info: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The

Contextual Info: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The

BP 109 transistor

Abstract: transistor BP 109 transistor ec5724 transistor GaAs FET s parameters transistor BP 915 EC5724
Contextual Info: EC5724 Wide Band Power FET GaAs Field Effect Transistor Description S The EC5724 device,available in chip form, is a power GaAs Field Effect Transistor, designed for wideband oscillator and amplifier applications, up to 18GHz. Individual via hole connection is made

Contextual Info: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from

Transistor TL 31 AC

Abstract: j142
Contextual Info: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from

SiGe POWER TRANSISTOR

Abstract: Gan hemt transistor RFMD InP HBT transistor low noise
Contextual Info: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9822T1 The RF Small Signal Line Gallium Arsenide PHEMT Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT Designed for use in low voltage, moderate power amplifiers such as portable

vk200 ferrite bead

Abstract: power transistor gaas transistor 9822 Case 449-02
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9822T1 The RF Small Signal Line G allium Arsenide PHEMT Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT Designed for use in low voltage, moderate power amplifiers such as portable

SGA-9089Z

Abstract: InP HBT transistor low noise
Contextual Info: SGA-9089Z SGA-9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from

Contextual Info: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF

SGA9289Z

Abstract: MARKING P2Z SGA-9289z SGA9289ZSR rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9
Contextual Info: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This

SGA9289Z

Contextual Info: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This

sga9189z

Abstract: marking p1z SGA-9189Z marking p1z transistor
Contextual Info: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF

SGA9189

Abstract: marking p1z 130C SGA-9189 SGA9189Z trace code marking RFMD SGA-9189Z marking p1z transistor
Contextual Info: SGA-9189 Z SGA-9189(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9189 is a high performance transistor designed for operation to

MARKING P2Z

Abstract: SGA9289 SGA-9289 130C J231 transistor j392 sot89
Contextual Info: SGA-9289 Z SGA-9289(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9289 is a high performance transistor designed for operation to

Contextual Info: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Features Matching Applied GaAs HBT Typical Gmax, OIP3, P1dB @ 5V,270mA GaAs MESFET 23 21 Si BiCMOS GaAs pHEMT Si CMOS 38 17 13 11 Si BJT 7 5 InP HBT

GaN ADS

Abstract: GaN amplifier 120W transistor hemt RF393x
Contextual Info: RFMD. High Power GaN Unmatched Power Transistors UPT Introducing the development of Our GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5µm GaN high electron mobility transistor (HEMT) semiconductor process,

SGA-9089Z

Abstract: 105051
Contextual Info: SGA-9089Z High IP3, Medium Power Discrete SiGe Transistor SGA-9089Z Preliminary HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free Package: SOT-89 Product Description Features RFMD’s SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from

Motorola transistor 358

Abstract: Case 449-02
Contextual Info: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide PHEMT MRF9822T1 Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT

Motorola 680

Abstract: Case 449-02 Motorola transistor 358 TRANSISTOR Z4 marking Z4 marking Z6 MRF9822T1 transistor 9822 nippon ferrite vk200 ferrite bead
Contextual Info: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide PHEMT MRF9822T1 Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT

tlp721

Contextual Info: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR TO SH IB A TECHNICAL TLP721 DATA GaAs IRED & PHOTO-TRANSISTOR TLP721 OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP721 consists of a photo-transistor optically coupled

74286

Abstract: UL1577 E67349 TLP733 TLP733F TLP734 TLP734F
Contextual Info: TOSHIBA TLP733FJLP734F TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP733F, TLP734F OFFICE MACHINE SWITCHING POWER SUPPLY The TOSHIBA TLP733F and TLP734F consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six

EN60065

Abstract: TOSHIBA VDE DIODE S4 58A DIODE S4 62a UL1577 TLP421 TLP421F DIN-VDE0884 TOSHIBA TUV VDE0884
Contextual Info: TO SH IBA TLP421F TOSHIBA PHOTOCOUPLER OFFICE EQUIPMENT GaAs IRED & PHOTO-TRANSISTOR TLP421F HOUSEHOLD APPLIANCES SOLID STATE RELAYS SWITCHING POWER SUPPLIES VARIOUS CONTROLLERS SIGNAL TRANSMISSION BETWEEN DIFFERENT VOLTAGE CIRCUITS The TOSHIBA TLP421F consists of a silicone photo-transistor