POWER TRANSISTOR 200A Search Results

Darlington 40A

Abstract: SQD200A60 300V switching transistor Application sqd200a60 darlington 8A 300V darlington power transistor diode 300v 200A sit transistor SQD200A40 380 darlington
Contextual Info: TRANSISTOR MODULE SQD200A40/60 UL;E76102 M SQD200A is a Darlington power transistor module which a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for

BUK456

Abstract: 100-C BUK456-200A BUK456-200B T0220AB
Contextual Info: Philips Components BUK456-200A BUK456-200B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK455-200B

Abstract: BUK455 BUK455-200A T0220AB TIL51
Contextual Info: Philips Components BUK455-200A BUK455-200B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-elfect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

vostro 1400

Contextual Info: Philips Semiconductors Product Specification BUK455-200A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device Is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

QCA300BA60

Abstract: 675g M6 transistor
Contextual Info: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is

QCA300BA60

Contextual Info: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is

E2 diode

Abstract: Diode B2x
Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1

BUK475

Abstract: BUK475-200A BUK475-200B
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor Isolated version of BUK455-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended foruse in Switched Mode Power Supplies SMPS ,

BUK445-200A

Abstract: BUK475 BUK475-200A BUK475-200B
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK454-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,

Transistor 51Y

Abstract: 51y diode S20Q
Contextual Info: Product Specification Philips Semiconductors BU K554-200A/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

K475

Abstract: buk475
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,

HA 1137

Abstract: BUK454-200A BUK454-200B T0220AB
Contextual Info: BUK454-200A BUK454-200B Philips Components PowerMOS transistor QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-eflect power transistor in a plastic envelope. The device is intended lor use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: TRANSISTOR MODULE SQP200A40/60 UL;E76102 M S Q D 2 0 0 A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for

BUK444-200A

Abstract: BUK474 BUK474-200A BUK474-200B
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK454-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK454-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effeet power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK454-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,

BUK444-200A

Abstract: BUK474 BUK474-200A BUK474-200B
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK454-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,

100C

Abstract: BUK564-200A
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor BUK564-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK564-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a

BUK565-200A

Contextual Info: Product specification Philips Semiconductors PowerMOS transistor BUK565-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK554-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK564-200A Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL N-channel enhancement mode logic level fieid-effect power transistor in a