POWER SUPPLY AMPLIFIER 1800W Search Results

Contextual Info: AH102A The Communications Edge TM Medium Power, High Linearity Amplifier Product Description Functional Diagram The AH102A is a medium power gain block that offers excellent dynamic range in a low-cost surface mount package. The combination of a single supply voltage and

102ag

Contextual Info: AH102A The Communications Edge TM Medium Power, High Linearity Amplifier Product Description Functional Diagram The AH102A is a medium power gain block that offers excellent dynamic range in a low-cost surface mount package. The combination of a single supply voltage and

102ag

Abstract: Amplifier SOT-89 c4 AH102A-G MMIC SOT 89 marking CODE AH102A AH102A-PCB2000 AH102A-PCB900 JESD22-A114 1117 sot 89 1117 2256 regulator
Contextual Info: AH102A The Communications Edge TM Medium Power, High Linearity Amplifier Product Description Functional Diagram The AH102A is a medium power gain block that offers excellent dynamic range in a low-cost surface mount package. The combination of a single supply voltage and

AH102

Abstract: rf power amplifier design with s-parameters MHz
Contextual Info: AH102 The Communications Edge Product Information Medium Power, High Linearity Amplifier Product Description The AH102 is a medium power gain block that offers excellent dynamic range in a low cost surface mount package. The combination of a single supply voltage and an internally matched

AH201

Abstract: 68 4401 JESD22-A114 J-STD-020A LLQ1608 amp 9435 marking code 9435 TOKO 707 WJ AH201 amplifier
Contextual Info: AH201 The Communications Edge TM Medium Power, High Linearity Amplifier Product Features • +30 dBm P1dB • +47 dBm Output IP3 • 17 dB Gain @ 900 MHz • MTBF >100 Years • Single Positive Supply • Internally Matched • 24dBm IS-95 Channel Power @ -45dBc ACPR

AP502

Abstract: AP502-PCB JESD22-A114 Class AB AMPLIFIER 4W AP-502 r7730
Contextual Info: AP502 The Communications Edge TM UMTS-band 4W HBT Amplifier Module Product Features Product Description • 2110 – 2170 MHz • +36 dBm P1dB • -55 dBc ACLR @ 25 dBm wCDMA linear power • +12 V Single Supply • Power Down Mode • Bias Current Adjustable

R7730

Contextual Info: AP502 UMTS-band 4W HBT Amplifier Module Product Features Product Description • 2110 – 2170 MHz • +36 dBm P1dB • -55 dBc ACLR @ 25 dBm wCDMA linear power • +12 V Single Supply • Power Down Mode • Bias Current Adjustable • RoHS-compliant flange-mount pkg

Contextual Info: AP622 UMTS-band 4W HBT Amplifier Module Product Features • 2.11 – 2.17 GHz • 28 dB Gain • -55 dBc ACLR @ +23 dBm Pavg • +35 dBm P1dB • +28 V Supply • Power Down Mode • RoHS-compliant flange-mount pkg Applications • WCDMA Power Amplifiers

Contextual Info: AP502 UMTS-band 4W HBT Amplifier Module Product Features Product Description • 2110 – 2170 MHz • +36 dBm P1dB • -55 dBc ACLR @ 25 dBm wCDMA linear power • +12 V Single Supply • Power Down Mode • Bias Current Adjustable • RoHS-compliant flange-mount pkg

Resistor mttf

Abstract: AP512 AP512-PCB JESD22-A114 UMTS-band power module POWER MODULE TM 39 wj model marking code
Contextual Info: AP512 The Communications Edge TM UMTS-band 8W HBT Amplifier Module Product Features • 2110 – 2170 MHz • 28.5 dB Gain • -55 dBc ACLR @ 28 dBm W-CDMA linear power • +39 dBm P1dB • +12 V Single Supply • Power Down Mode • Bias Current Adjustable

transistor c 5083

Abstract: WJ-A25 transistor bc 144 WJ-CA25-1 WJ-A25-1 Transistor BC 457 bc 457 Transistor WJA25
Contextual Info: UjJ A25-1 / SMA25-1 2 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: < 3.4 dB TYP. MEDIUM POWER OUT: +9.0 dBm (TYP.) LOW VSWR: < 1.7:1 VSWR (TYP.) WIDE POWER SUPPLY RANGE: +5 to +15 VOLTS Outline Drawings

Contextual Info: AP622 UMTS-band 4W HBT Amplifier Module Product Features • 2.11 – 2.17 GHz • 28 dB Gain • -55 dBc ACLR @ +23 dBm Pavg • +35 dBm P1dB • +28 V Supply • Power Down Mode • RoHS-compliant flange-mount pkg Applications • WCDMA Power Amplifiers

Contextual Info: u u U RA63-1 / SMRA63-1 2000 to 6000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRAWIDE BANDWIDTH: 1.8-6.2 GHz TYR HIGH GAIN: 19.5 dB (TYR) HIGH OUTPUT POWER: +16.0 dBm (TYP.) LOW POWER SUPPLY VOLTAGE: +5 VDC Outline Drawings

AP622

Abstract: AP-622
Contextual Info: AP622 UMTS-band 4W HBT Amplifier Module Product Features • 2.11 – 2.17 GHz • 28 dB Gain • -55 dBc ACLR @ +23 dBm Pavg • +35 dBm P1dB • +28 V Supply • Power Down Mode • RoHS-compliant flange-mount pkg Applications • WCDMA Power Amplifiers

c 4468 power transistor

Abstract: TRANSISTOR BC 136 bc 440-6 transistor 4406 transistor WJ-CA17
Contextual Info: uuü A17/SMA17 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +15.3 dB TYP. HIGH THIRD ORDER I.P. +27 dBm (TYP.) LOW VSWR: <1.3:1 (TYP.) WIDE POWER SUPPLY RANGE: +5 T O +15 VOLTS Outline Drawings

Resistor mttf

Abstract: UMTS-band power module MTTF calculation 2110 - 2170mhz power module wj model marking code
Contextual Info: AP512 UMTS-band 8W HBT Amplifier Module Product Features • 2110 – 2170 MHz • 28.5 dB Gain • -55 dBc ACLR @ 28 dBm W-CDMA linear power • +39 dBm P1dB • +12 V Single Supply • Power Down Mode • Bias Current Adjustable • RoHS-complaint flange-mount pkg

Contextual Info: AH101 The Communications Edge Medium Power, High Linearity Amplifier Product Features • 50 - 1500 MHz • +45 dBm Output IP3 • 13 dB Gain • +27 dBm P1dB • MTTF >100 Years • Unconditionally Stable • Internally Matched • Single Bias Supply

lm 4580

Abstract: 4499 driver 4588
Contextual Info: ICA1008 2.0 to 10.0 GHz GaAs MMIC AMPLIFIER ◆ IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS ◆ SINGLE POWER SUPPLY: +5V ◆ BROADBAND PERFORMANCE ◆ ON-CHIP BIAS NETWORK ◆ 100% ON-WAFER RF-TESTED ◆ SELECTABLE BIAS OPTIONS ICA1008 Chip Outline

Contextual Info: ICA1004 0.75 to 3.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ IDEAL FOR CELLULAR AND PCS APPLICATIONS SINGLE POWER SUPPLY +5 V ON-CHIP BIAS NETWORK EXCELLENT FLATNESS OVER TEMP 100% ON-WAFER RF-TESTED ICA1004 Chip Outline Guaranteed Specifications* Characteristics

ICA1004

Contextual Info: ICA1004 0.75 to 3.0 GHz GaAs MMIC AMPLIFIER ◆ IDEAL FOR CELLULAR AND PCS APPLICATIONS ◆ SINGLE POWER SUPPLY +5 V ◆ ON-CHIP BIAS NETWORK ◆ EXCELLENT FLATNESS OVER TEMP. ◆ 100% ON-WAFER RF-TESTED ICA1004 Chip Outline Guaranteed Specifications* Minimum

lm 3254

Contextual Info: ICA1009 2.0 to 11.0 GHz GaAs MMIC AMPLIFIER ◆ IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS ◆ SINGLE POWER SUPPLY: +5V ◆ BROADBAND PERFORMANCE ◆ ON-CHIP BIAS NETWORK ◆ 100% ON-WAFER RF-TESTED ◆ SELECTABLE BIAS OPTIONS ICA1009 Chip Outline

10459

Contextual Info: ICA1001 4.5 to 6.5 GHz GaAs MMIC AMPLIFIER ◆ IDEAL FOR BUFFER AMP AND GAIN BLOCK APPLICATIONS ◆ SINGLE POWER SUPPLY +5 V ◆ ON-CHIP BIAS NETWORK ◆ 100% ON-WAFER RF-TESTED ◆ MULTIPLE ON-CHIP BIAS OPTIONS ICA1001 Chip Outline Guaranteed Specifications*

Contextual Info: ICL1002A 3/7/00 1:56 PM Page 1 ICL1002A The Communications Edge GaAs MMIC Amplifier Product Features • 1.0 to 12.0 GHz Bandwidth • Excellent Even Order Harmonic • • • Suppression Single Bias Supply 100% On-wafer DC Tested Low Power Consumption

AMPLIFIER 1800w

Abstract: U 6204 lm 4580 4499 driver WJ-ICA1008
Contextual Info: uuJ ICA1008 2.0 to 10.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ ♦ IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY: +5V BROADBAND PERFORMANCE ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED SELECTABLE BIAS OPTIONS ICA1008 Chip Outline