POWER SEMICONDUCTORS Search Results

Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB

RX1214B130Y

Abstract: RX1214B80W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium

AN1032

Abstract: NES1823P-70
Contextual Info: PRELIMINARY DATA SHEET 70W L-S BAND TWIN POWER GaAs MESFET FEATURES NES1823P-70 OUTLINE DIMENSIONS Units in mm • • HIGH OUTPUT POWER: 70 W TYP HIGH POWER ADDED EFFICIENCY: 40 % TYP • HIGH LINEAR GAIN: 11 dB TYP at 2.2 GHz PACKAGE OUTLINE T-86 45°

E5550 temic

Contextual Info: Tem ic e5550 Semiconductors Standard Read/Write Identification IC Description The e5550 is a contactless R/W-IDentification IC IDIC * for general-purpose applications in the 125 kHz range. A single coil, connected to the chip, serves as the IC's power supply and bidirectional communication

Contextual Info: SN74AUP1G06 LOW-POWER SINGLE INVERTER BUFFER/DRIVER WITH OPEN-DRAIN OUTPUTS www.ti.com SCES590 – JULY 2004 – REVISED SEPTEMBER 2005 FEATURES • • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Low Static-Power Consumption

Contextual Info: SN74AUP1G57 LOW-POWER CONFIGURABLE MULTIPLE-FUNCTION GATE www.ti.com SCES503D – NOVEMBER 2003 – REVISED JUNE 2005 • • FEATURES • • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Low Static-Power Consumption ICC = 0.9 µA

NE6500379A

Abstract: NE6500379A-T1
Contextual Info: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER NE6500379A GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP • HIGH LINEAR GAIN: 10 dB TYP 5.5 BOTTOM 3.8

California Eastern Laboratories OR NEC

Abstract: NEZ1414-5H T-78
Contextual Info: PRELIMINARY DATA SHEET 5 W Ku-BAND POWER GaAs HJ-FET NEZ1414-5H FEATURES OUTLINE DIMENSIONS Units in mm • CLASS A OPERATION PACKAGE OUTLINE X-17 • HIGH OUTPUT POWER: 37.5 dBm TYP • HIGH LINEAR GAIN: 9.0 dB TYP 8.25 ± 0.15 • HIGH EFFICIENCY: 36% TYP

A 4506 igbt

Abstract: HCNW4506 4506 mosfet 4506 mosfet inverter E55361 HCPL-0466 HCPL-4506 HCPL-5300 HCPL-5301 HCPL-J456
Contextual Info: Intelligent Power Module and Gate Drive Interface Optocouplers HCPL-4506 HCPL-J456 HCPL-0466 HCNW4506 Technical Data Features • Performance Specified for Common IPM Applications over Industrial Temperature Range: -40°C to 100°C • Fast Maximum Propagation

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110

Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet

74LV245A

Contextual Info: SN74LV245AT OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS www.ti.com SCLS605B – DECEMBER 2004 – REVISED AUGUST 2005 FEATURES • • Ioff Supports Partial-Power-Down Mode Operation Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds JESD 22

100w audio amplifier

Contextual Info: TOSHIBA 2SB1429 Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process Power Amplifier Applications Features • Com plem entary to 2SD 2155 • Recom m end for 100W High Fidelity Audio Frequency - Amplifier O utput Stage Absolute Maximum Ratings (Ta = 25 C)

DEC1540

Contextual Info: SN54ABT273, SN74ABT273 OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH CLEAR SCBS185B – FEBRUARY 1991 – REVISED JANUARY 1997 D D D D State-of-the-Art EPIC-ΙΙB  BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per

AUDIO CIRCUIT 6283

Contextual Info: TL7702B, TL7705B, TL7733B SUPPLY-VOLTAGE SUPERVISORS The TL7705BM is obsolete and no longer is supplied. D D D Power-On Reset Generator Automatic Reset Generation After Voltage Drop RESET Output Defined From VCC ≥ 1 V Precision Voltage Sensor TL77xxBC . . . D OR P PACKAGE

lexan 920A

Abstract: AN1114 FDC37C669 FDC37N769 HSDL-3003 HSDL-3003-021 AN-1114 IRDA TRANSMITTER
Contextual Info: Agilent HSDL-3003 IrDA Data Compliant Low Power 115.2 kbit/s with Remote Control Infrared Transceiver Data Sheet Description The HSDL-3003 is a small form factor enhanced infrared IR transceiver module that provides the capability of (1) interface between logic and IR signals for

SN74HC157DT

Abstract: SN74HC157DTE4
Contextual Info: SN54HC157, SN74HC157 QUADRUPLE 2ĆLINE TO 1ĆLINE DATA SELECTORS/MULTIPLEXERS SCLS113D − DECEMBER 1982 − REVISED SEPTEMBER 2003 D Wide Operating Voltage Range of 2 V to 6 V D Outputs Can Drive Up To 15 LSTTL Loads D Low Power Consumption, 80-µA Max ICC

E169910

Contextual Info: TPS2020ĆQ1, TPS2021ĆQ1 TPS2022ĆQ1, TPS2023ĆQ1, TPS2024ĆQ1 POWERĆDISTRIBUTION SWITCHES SGLS260C − SEPTEMBER 2004 − REVISED NOVEMBER 2004 D Qualification in Accordance With D D D D D D D D D D Maximum Standby Supply AEC-Q100† Qualified for Automotive Applications

Contextual Info: TSB41BA3AĆEP IEEE 1394b THREEĆPORT CABLE TRANSCEIVER/ARBITER SGLS253A—OCTOBER 2004—REVISED JULY 2005 D Controlled Baseline D D D D D D D D D D D D Low-Power Automotive Sleep Mode − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of

MC-7862 NEC

Abstract: MC7862G MC-7862 MC-7862G 74760
Contextual Info: CATV 18 dB POWER DOUBLER AMPLIFIER MC-7862G OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE • GALLIUM ARSENIDE ACTIVE DEVICES • LOW DISTORTION • LOW NOISE FIGURE (6.3 dB TYP at 860 MHz) • LOW DC CURRENT DRAW (355 mA TYP at 24 V) • HIGH RELIABILITY

Contextual Info: TPS771xx-Q1 WITH RESET OUTPUT TPS772xx-Q1 WITH POWER GOOD OUTPUT 150ĆmA LDO REGULATORS WITH 8ĆPIN MSOP PACKAGING SGLS295 − FEBRUARY 2005 D Qualification in Accordance With D D D D D D D D D D D NOTE 1: Contact Texas Instruments for details. Q100 qualification

SN74LVTH125-EP

Contextual Info: SN74LVTH125ĆEP 3.3ĆV ABT QUADRUPLE BUS BUFFER WITH 3ĆSTATE OUTPUTS SCBS765 − NOVEMBER 2003 D Controlled Baseline D D D D D D D Ioff and Power-Up 3-State Support Hot − One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources DMS Support

MC octal low side switch

Contextual Info: Order this document by MC33298/D MC33298 Octal Serial Switch with Serial Peripheral Interface I/O The MC33298 is an eight output low side power switch with 8 bit serial input control. The MC33298 is a versatile circuit designed for automotive applications, but is well suited for other environments. The MC33298