POWER RF Search Results

XP1073-BD

Abstract: xp1073 DM6030HK XP107
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

26540

Abstract: 4368
Contextual Info: Wireless Products Electromechanical RF Switches Active Components Passive Components RF Radiation Safety Products Main Menu Power Meters/Monitors Power Dividers 2-40 GHz 3-WAY POWER DIVIDERS • True Three-Way Power Dividers · Octave Band Frequency Coverage

Contextual Info: UCC2930-3/-5 UCC3930-3/-5 UNITRODE PRELIMINARY Cellular Telephone Power Converter FEATURES BiCMOS Low Power RF/Cellular Power Management Negative Supply Voltage at 5mA for GaAs MESFET Amplifiers Separate Micro-Power Logic Supply Enable Low Quiescent, 3mA, Operating

Contextual Info: Catalog: 1654001 Issue Date: 06.2011 Corcom Product Guide RFI Filter for Power Factor Corrected Power Supplies U Series UL Recognized CSA Certified VDE Approved 6EU1 U Series 6EUP Specifications • Designed for equipment using power factor corrected power supplies

Contextual Info: RF Micro Devices RF5198 and RF5184 High-Power, High-Efficiency Linear Power Amplifier Modules for WCDMA Applications The RF5198 and RF5184 from RF Micro Devices® RFMD® are high-power, high-efficiency linear power amplifier modules specifically designed for

Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB

Low Drop Out Regulators

Abstract: 7585C DIL 16
Contextual Info: o UCC2930-3\UCC3930-3 IIMTKORATKO C IR C U IT S ADVANCED INFORMATION UNITRODE Cellular Telephone Power Converter DESCRIPTION FEATURES BiCMOS Low Power RF/Cellular power management Negative 2.5 Volt @ 5 m A regulator for GaAs MESFET Separate Micro-power 3.3 V logic

S-AU21

Contextual Info: TOSHIBA RF POWER AM PLIFIER MODULE S-AU21 Unit in mm 800MHz UHF POWER AMPLIFIER MODULE USA CELLULAR RADIO FEATURES : 2-R2.1±Q2 . Built-in Driver Stage • Output Power (6W) is Directly Gained by VCO(lmW). . Output Power : Po*S6W . Minimum Gain : Gp=37.7dB

SSND-6013N-119

Contextual Info: Frequency Synthesizer Typical Performance Data SSND-6013N-119+ Power Output Vs Frequency IF Power Output Vs Frequency (RF) -9.0 5.0 -45°C -9.2 -45°C 4.5 +25°C +25°C 4.0 +85°C Power Output (dBm) Power Output (dBm) -9.4 -9.6 -9.8 -10.0 -10.2 3.0 2.5 2.0

MMIC X-band amplifier

Contextual Info: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF

Contextual Info: S−AU68L TOSHIBA RF POWER AMPLIFIER MODULE S−AU68L UHF BAND FM POWER AMPLIFIER MODULE Unit in mm MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VDD 17 V DC Supply Voltage VGG 6 V Input Power Pi 50 mW Output Power Po 12

ITT2208GL

Contextual Info: 3.5V 0.8W RF Power Amplifier IC for WCDMA ITT2208GL ADVANCED INFORMATION Vcc1 Vcc1 Vcc1 FEATURES • • • • • • 1 Single Bias Class AB Operation Small Profile 20-pin Micro Leadframe Plastic Package 29 dBm Linear Power Output 27 dB Power Gain 35% Power Added Efficiency

P1027-BD

Abstract: p1027 30SPA0536 DM6030HK TS3332LD XP1027-BD XP1027-BD-000V XP1027-BD-EV1 ka-band transistor
Contextual Info: 27.0-33.0 GHz GaAs MMIC Power Amplifier P1027-BD March 2007 - Rev 27-Mar-07 Features Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing

Low Drop Out Regulators

Abstract: 5V1 55C
Contextual Info: o UCC2930\UCC3930 IIM TBO RATBO C IR C U IT S ADVANCED INFORMATION UNITRODE Cellular Telephone Power Converter DESCRIPTION FEATURES BiCMOS Low Power RF/Cellular power management The UCC2930\UCC3930 is a BICMOS Low Power management con­ troller designed for battery powered applications for RF/Cellular tele­

TIM1414-4LA-371

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation

ATC 100E

Abstract: 700B ARF1505 amplifier 9v a 500v power transistor 1802 2x4700pF AMPLIFIER 1500w
Contextual Info: S D ARF1505 S ARF1505 BeO 1525-xx RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE S G S 300V 750W 40MHz The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.

30MPA0562

Abstract: 84-1LMI ka-band transistor
Contextual Info: 28.0-31.0 GHz GaAs MMIC Power Amplifier August 2005 - Rev 04-Aug-05 30MPA0562 Features Chip Device Layout tio n Ka-Band 1 W Power Amplifier 27.0 dB Small Signal Gain +30.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

Contextual Info: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.

S-AU25

Abstract: SAU25
Contextual Info: i TOSHIBA RF POWER AMPLIFIER MODULE - S-AU25 900MHz UHF POWER AMPLIFIER MODULE EUROPE CELLULAR RADIO FEATURES : Unit in mm . Built-in Driver Stage 2-R2.1±a2 . Output Power (6W) is Directly Gained by VCO(lmW). %

RCI-0402-10R0J

Abstract: RAYTHEON RMBA09500-58 grm39 GRM36COG8R2B50 OIP35 grm36cog101j50
Contextual Info: RF Components RMBA09500-58 - Cellular 2 Watt Linear GaAs MMIC Power Amplifier PRODUCT INFORMATION Description Features Electrical Characteristics2 Absolute Ratings The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon

GRM36COG101J50

Abstract: RMBA09501-58 RMBA09501A RMBA09501A-58 ba095 GRM39Y5V104Z50 grm39
Contextual Info: RF Components RMBA09501A-58 - Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features Electrical Characteristics2 Absolute Ratings The RMBA09501A is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon

mcl a 940

Abstract: MAX-9H
Contextual Info: High IP3 Active Mixer MAX-9H Level 0 LO Power +0 dBm 810 to 930 MHz Maximum Ratings Features Operating Temperature -40°C to 85 °C Storage Temperature -55°C to 100°C LO Power 10 dBm RF Power 15 dBm DC Voltage • low LO power, 0 dBm • gain, 9 dB typ.

S-AU17A

Contextual Info: RF POWER AMPLIFIER MODULE S - A U 1 7 A Unit in mm 900MHz UHF POWER AMPLIFIER MODULE PERSONAL RADIO FEATURES: 2 - R 2.1±CL2 . Built-in Driver Stage . Output Power (8W) is Directly Gained by VCO(lmW) £ . Output Power : P0 S 8W 6~ Q 5± Q 1 5 I . Minimum Gain : Gp=39dB

RD60HUF1-101

Abstract: Rf power transistor mosfet UHF transistor FET 100OHM RD60HUF1 PINw10 transistor A 1568 mitsubishi 250
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.