POWER ON CIRCUIT Search Results

Contextual Info: RS1E300GN Nch 30V 30A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 2.2mW RDS(on) at 4.5V (Max.) 2.8mW ID 30A PD 3.0W lFeatures HSOP8 lInner circuit 1) Low on - resistance. 2) High Power Package (HSOP8). (1) Source (2) Source (3) Source (4) Gate

MJL3281A MJL1302A

Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors
Contextual Info: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors

Contextual Info: TPD7211F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7211F Power MOSFET Gate Driver for half-bridge TPD7211F is a Power MOSFET gate driver for half-bridge circuit. BiCD process is applied on this product. Features z

Contextual Info: FSB50250US Smart Power Module SPM Features General Description • 500V RDS(on)=4.2Ω(max) 3-phase FRFET inverter including high voltage integrated circuit (HVIC) • 3 divided negative dc-link terminals for inverter current sensing applications FSB50250US is a tiny smart power module (SPM®) based on

Contextual Info: RS1E150GN Nch 30V 15A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 8.8mW RDS(on) at 4.5V (Max.) 11.4mW ID 15A PD 3.0W lFeatures HSOP8 lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant (1) Source (2) Source

RF4E070BN

Contextual Info: RF4E070BN Nch 30V 7A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 28.6mW RDS(on) at 4.5V (Max.) 40.0mW ID 7A PD 2.0W (6) (5) HUML2020L8 (1) (2) (4) (8) (3) (5) (6) (7) (3) lFeatures (4) (2) (1) lInner circuit 1) Low on - resistance. (1)

N-CHANNEL ENHANCEMENT MODE POWER MOSFET to-252

Contextual Info: AP2R803GH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 30V RDS ON 2.8mΩ ID G 75A S Description Advanced Power MOSFETs from APEC provide the

mje243 transistor

Abstract: MJE253 MJE243 equivalent MJE243
Contextual Info: ON Semiconductor NPN MJE243 * PNP MJE253 * Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —

NVTR01P02LT1G

Abstract: NVTR01P02
Contextual Info: NTR1P02LT1, NVTR01P02LT1 Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package http://onsemi.com These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical

IRFB4510

Abstract: IRFB4510G 0.192mH IRFB4310GPBF IRFB4510GPBF IRFB4310
Contextual Info: PD - 97774 IRFB4510GPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID (Silicon Limited)

mje13007-1

Abstract: MJE130 mje13007 equivalent MJE13007 transistor mje13007 equivalent MJE130071 AN719 AN873 AN875 AN951
Contextual Info: ON Semiconductor MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching

TDA7298

Abstract: sr 2262 IEC268-3 IEC268 d2817 ther5
Contextual Info: TDA7298 28W Hi-Fi AUDIO POWER AMPLIFIER WITH MUTE / STAND-BY PRODUCT PREVIEW SUPPLY VOLTAGE RANGE UP TO ±22V SPLIT SUPPLY OPERATION HIGH OUTPUT POWER UP TO 28W MUSIC POWER LOW DISTORTION MUTE/STAND-BY FUNCTION NO SWITCH ON/OFF NOISE AC SHORT CIRCUIT PROTECTION

Contextual Info: RF3933D RF3933D 90W GaN on SiC Power Amplifier Die Package: Die The RF3933D is a 48V, 90W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/ medical and general

Contextual Info: Timers True Delay on Release Type EBF • • • • • Time range 1 s to 10 m Knob-adjustable time setting Oscillator-controlled time circuit Output: 5 A SPDT For mounting on DIN-rail in accordance with DIN/EN 50 022 • 22.5 mm housing • LED-indication for power supply ON

BTS 8800

Abstract: BTS6163D von40 bts 6163 mosfet motor dc 48v GPT09161 IL12 auto cut off schematic diagram 48v battery charge 6163d Q67060-S7424-A103
Contextual Info: PROFETâ Data sheet BTS 6163 D Smart Highside Power Switch Reversave  Product Summary Operating voltage On-state resistance Nominal current Load current ISO Current limitation Package • Reverse battery protection by self turn on of power MOSFET Features

330nF capacitor EFFECTIVE

Abstract: 2 speakers 1 crossover amplifier pcb 150w class ab audio amplifier D97AU805A 1n4148 v4 330nF capacitor Speaker 80W t8 ballast circuits 1N4001 1N4148
Contextual Info: TDA7295S  80V - 80W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY VERY HIGH OPERATING VOLTAGE RANGE ±38V DMOS POWER STAGE HIGH OUTPUT POWER (80W @ THD = 10%, MUSIC POWER) MUTING/STAND-BY FUNCTIONS NO SWITCH ON/OFF NOISE VERY LOW DISTORTION VERY LOW NOISE SHORT CIRCUIT PROTECTION

IEI-1207

Abstract: PA1602 IC-3370 iso 1207 16PIN IC 3370
Contextual Info: DATA SHEET NEC COMPOUND äm m mFIELD m EFFECT POWER TRANSISTOR r „PAI 602 MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The ¡iPA1602 is Monolithic N-channel Power MOS FET Array that built CONNECTION DIAGRAM in 7 circuits designed for LED, Relay, Thermal Head, and so on.

AP9474GM

Contextual Info: AP9474GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D D ▼ Single Drive Requirement D D BVDSS 60V RDS ON 10.5mΩ ID ▼ Surface Mount Package SO-8 S S S 12.8A G D Description Advanced Power MOSFETs from APEC provide the

Contextual Info: Preliminary Datasheet RJK0631JPD Silicon N Channel Power MOS FET High Speed Power Switching R07DS0252EJ0100 Rev.1.00 Feb 03, 2011 Features •     For Automotive application Low on-resistance : RDS on = 12 m typ. Capable of 4.5 V gate drive

RH A4 130

Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only Features * High Luminous intensity output. * Low power consumption. * High efficiency. * Versatile mounting on P.C. board or panel. * I.C. Compatible/low current requirements. Package Dimensions Part No.

Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only Features * Low power consumption. * High efficiency. * Versatile mounting on p.c. board or panel. * I.C. compatible/low current requirement. * 3.1 mm diameter package. Package Dimensions Part No. Lens

LTL81HKGKNN

Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only Features * High luminous intensity output. * Low power consumption. * High efficiency. * Versatile mounting on P.C. Board or panel. * I.C. Compatible/low current requirement. * Wide viewing angle. Package Dimensions

LTL42TB6N

Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only Features * Low power consumption. * High efficiency. * Versatile mounting on p.c. board or panel. * I.C. compatible/low current requirement. * Popular T-1 diameter package. Package Dimensions Part No.

Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only Features * Low power consumption. * High efficiency. * Versatile mounting on p.c. board or panel. * I.C. compatible/low current requirement. * Popular T-13/4 diameter. Package Dimensions Part No. Lens