POWER ON CIRCUIT Search Results

fet_11124.0

Contextual Info: Category: MOSFET CIRCUIT IDEAS FOR DESIGNERS Schematic no. fet_11124.0 Micro-power Precision Normally-ON Power Switch Description This micro-power precision Normally-ON power switch is controlled by VIN. When VIN is at GND, the MOSFET ALD1149xx is in an ON-State, which generates a low impedance path across its VDS, D and S terminals (RDS

P1006

Abstract: GAAS FET AMPLIFIER x-band 10w XP1006 bonding XP1006 XP1006-BD
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

XP1007

Abstract: power transistor mimix x-band x-band power transistor power transistor gaas x-band
Contextual Info: 8.7-10.7 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1007 Features Chip Device Layout X-Band 10W Power Amplifier 18.0 dB Small Signal Gain +40.0 dBm Saturated Output Power 32% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: NCP1032 Low Power PWM Controller with On-Chip Power Switch and Startup Circuits for Telecom Systems The NCP1032 is a miniature high−voltage monolithic switching converter with on−chip power switch and startup circuits. It incorporates in a single IC all the active power control logic and

Chip Advanced Tech

Abstract: XP1006 XP1006 bonding
Contextual Info: XP1014-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Features • XP1006 Driver Amplifier • 18.0 dB Small Signal Gain • +31.0 dBm Saturated Output Power • 35% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing

20N06

Abstract: 20n06g AN569 NTD20N06 NTD20N06G NTD20N06T4G
Contextual Info: NTD20N06 Power MOSFET 20 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http://onsemi.com Lower RDS on Lower VDS(on) Lower Capacitances

xp1014

Abstract: P1014-BD
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD November 2008 - Rev 14-Nov-08 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

2N6437

Abstract: 2N6339 2N6341 2N6438
Contextual Info: ON Semiconductort 2N6437 2N6438 * High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —

Contextual Info: RS1E300GN Nch 30V 30A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 2.2mW RDS(on) at 4.5V (Max.) 2.8mW ID 30A PD 3.0W lFeatures HSOP8 lInner circuit 1) Low on - resistance. 2) High Power Package (HSOP8). (1) Source (2) Source (3) Source (4) Gate

Contextual Info: RQ3E120GN Nch 30V 12A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 8.8mW RDS(on) at 4.5V (Max.) 11.8mW ID 12A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) High Power Package (HSMT8).

Contextual Info: RS1E200GN Nch 30V 20A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 4.6mW RDS(on) at 4.5V (Max.) 6.1mW ID 20A PD 3.0W lFeatures HSOP8 lInner circuit 1) Low on - resistance. 2) High Power Package (HSOP8). (1) Source (2) Source (3) Source (4) Gate

Contextual Info: RS1E320GN Nch 30V 32A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 1.9mW RDS(on) at 4.5V (Max.) 2.4mW ID 32A PD 3.0W lFeatures HSOP8 lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) High Power Package (HSOP8).

Contextual Info: RQ3E080GN Nch 30V 8A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 16.7mW RDS(on) at 4.5V (Max.) 22.8mW ID 8A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) High Power Package (HSMT8).

D26B

Abstract: D28B LP3470 MA05A sot23-5 package marking 68 DS100016-14 D31B SOT23-5
Contextual Info: December 1997 LP3470 Tiny Power On Reset Circuit General Description The LP3470 is a micropower CMOS voltage supervisory circuit designed to monitor power supplies in microprocessor µP and other digital systems. It provides maximum adjustability for power-on-reset (POR) and supervisory functions. It

Contextual Info: RQ3E100MN Nch 30V 10A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 12.3mW RDS(on) at 4.5V (Max.) 16.8mW ID 10A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) High Power Small Mold Package (HSMT8).

Contextual Info: Product specification MGSF2N02EL Power MOSFET 2.8 A, 20 V RDS on = 85 mW (max) 2.8 Amps, 20 Volts, N−Channel SOT−23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry.

AC FUSE T4A

Abstract: carlo gavazzi SP 115 230 T4A/250V EN50081-1
Contextual Info: Switching Power Supply Type SPD 120W DIN rail mounting • Installation on DIN Rail 7.5 or 15mm • Short circuit protection • PFC available • High efficiency • Power ready output • LED indicator for DC power ON • LED indicator for DC low • Parallel versions available

Contextual Info: Product specification MGSF1N02LT1 Power MOSFET 750 mAmps, 20 Volts 750 mAMPS 20 VOLTS RDS on = 90 mW N–Channel SOT–23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical

JESD78

Abstract: NCP1030 NCP1030DMR2 NCP1030DR2
Contextual Info: NCP1030 Product Preview Bias Regulator with On Chip Power Switch The NCP1030 is a high voltage monolithic switching regulator with on chip Power Switch and active Start–up Circuits. The NCP1030 integrates all the components necessary for implementing high

Contextual Info: ZERO-SPEED ,SELF-CALIBRATING,HALL-EFFECT GEAR-TOOTH TRUE POWER-ON SENSORS The ATS630LSB and the ATS631LSB true power-on state TPOS gear-tooth sensors are optimized Hall-effect IC/magnet combinations that provide power-on tooth/valley recognition and extremely accurate

BD6521F

Abstract: BD6520F
Contextual Info: 00W056A Power management switching IC BD6520F/BD6521F Description Dimension Units : mm The BD6520F, BD6521F is a power management switching IC that includes Low ON resistance MOSFET. Soft start and discharge circuit are included. It reduces influence on the load when

ATS631LSC

Abstract: ATS630LSC ATS631 human detection sensors circuit uv flame sensor Hall-Effect-Sensor for speed sensing human detection sensors ATS610LSA ATS611LSB camshaft position sensor TPOS
Contextual Info: ATS630LSC ATS631LSC Data Sheet 27627.121 ATS630LSC AND ATS631LSC ZERO-SPEED, SELF-CALIBRATING, HALL-EFFECTAND GEAR-TOOTH TRUE POWER-ON SENSORS ZERO-SPEED, SELF-CALIBRATING, HALL-EFFECT GEAR-TOOTH TRUE POWER-ON SENSORS The ATS630LSC and the ATS631LSC true power-on state TPOS

Contextual Info: ZERO-SPEED , SELF-CALIBRATING,HALL-EFFECT GEAR-TOOTH TRUE POWER-ON SENSORS The ATS630LSA and the ATS631LSA true power-on state TPOS gear-tooth sensors are optimized Hall-effect IC/magnet combinations that provide power-on tooth/valley recognition and extremely accurate

a103 transistor

Abstract: JESD22-A101 transistor a102 car Speed Sensor circuit diagram ATS631LSA hall effect 4 pin out Application Note 27701 car Speed Sensor circuit diagram CAN uv flame sensor JESD22-A104
Contextual Info: ATS630LSB ATS631LSB Data Sheet 27627.122 ATS630LSB AND ATS631LSB ZERO-SPEED, SELF-CALIBRATING, HALL-EFFECTAND GEAR-TOOTH TRUE POWER-ON SENSORS ZERO-SPEED, SELF-CALIBRATING, HALL-EFFECT GEAR-TOOTH TRUE POWER-ON SENSORS The ATS630LSB and the ATS631LSB true power-on state TPOS