POWER ON CIRCUIT Search Results

TRANSISTOR N3

Abstract: N3 transistor
Contextual Info: RADPAL POWER-ON-RESET PERFORMANCE AT COLD TEMPERATURES 11/3/97 Power-On-Reset UTMC’s RADPAL device is designed to reset all of the I/O registers on power up. A functional limitation has been observed in the product relating to the Power-On-Reset circuit at cold

jc100a1

Abstract: FC150A MW010a JC100A remote control 555 MC005A FE200 MH010 MC-010A fw300a1
Contextual Info: Application Note September 1997 Design Guidelines for Power Module Remote On/Off Circuits Introduction Isolated-Closure Remote On/Off The remote on/off feature on Lucent Technologies Microelectronics Group board-mounted power modules BMPMs allows the user to switch the module on

EH11

Abstract: WM8720 PWDN
Contextual Info: w WAN0126 WM8706/20/28 Power on Reset Activity and Waking from Power Down Mode INTRODUCTION The WM8706/20/28 includes an internal Power On Reset POR circuit to ensure the device powers up in a default state. This application note describes the behaviour of the POR circuit on power up

IT8671

Abstract: IT8761F 1488 1489 IT8761 of 1488 7407 application note IT867 99007
Contextual Info: Integrated Technology Express, Inc. Application Note of IT8761F for Power On Strapping Circuit July 1, 1999 Ø Power on strapping circuit needs extra attention when a “0” setting is selected Description: Due to IT8761 Rev. B power on strapping pins selection, a “0”

DIL-16

Abstract: SOIC-16 UCC2918 UCC3918
Contextual Info: UCC2918 UCC3918 Low On Resistance Hot Swap Power Manager FEATURES DESCRIPTION • Integrated 0.06Ω Power MOSFET The UCC3918 Low on Resistance Hot Swap Power Manager provides complete power management, hot swap capability, and circuit breaker functions. The only

Contextual Info: UCC2918 UCC3918 Low On Resistance Hot Swap Power Manager FEATURES DESCRIPTION • Integrated 0.06Ω Power MOSFET The UCC3918 Low on Resistance Hot Swap Power Manager provides complete power management, hot swap capability, and circuit breaker functions. The only

fet_11124.0

Contextual Info: Category: MOSFET CIRCUIT IDEAS FOR DESIGNERS Schematic no. fet_11124.0 Micro-power Precision Normally-ON Power Switch Description This micro-power precision Normally-ON power switch is controlled by VIN. When VIN is at GND, the MOSFET ALD1149xx is in an ON-State, which generates a low impedance path across its VDS, D and S terminals (RDS

PMOS

Abstract: pMOS transistor ZXM61P03FTA
Contextual Info: CIRCUIT IDEAS FOR DESIGNERS Category: MOSFET Schematic no. fet_11124.0 Micro-power Precision Normally-ON Power Switch Description This micro-power precision Normally-ON power switch is controlled by VIN. When VIN is at GND, the MOSFET ALD1149xx is in an ON-State, which generates a low impedance path across its VDS, D and S terminals (RDS

Contextual Info: Cell-Based IC Power On Reset User Notes Overview This Engineering Application Note EAN describes the use and testing of the Atmel library cell Power On Reset (POR). Circuit Reset Signals A pre-requisite for the use of the Power On Reset (POR) cell in a circuit is that

carlo gavazzi SP 115 230

Abstract: spd2430
Contextual Info: Switching Power Supply Type SPD 300W DIN rail mounting • Installation on DIN Rail 7.5 or 15mm • Short circuit protection • Passive PFC • Power ready relay output on 24VDC • LED indicator for DC power ON • LED indicator for DC low • Parallel function by switch

FX020

Abstract: TYCO FW300A1 FC150A fw300 jc100a1 transistor crossreference AP97-038EPS FE200 tyco FE200 MW010A1
Contextual Info: Application Note September 1997 Design Guidelines for Power Module Remote On/Off Circuits Introduction Isolated-Closure Remote On/Off The remote on/off feature on the board-mounted power modules BMPMs allows the user to switch the module on and off electronically. This feature provides greater flexibility in the start-up sequencing and

2N5195

Contextual Info: ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP

2N5194

Abstract: 2N5195 2N5191 2N5192 2N5193
Contextual Info: ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP

sot23-5 Marking mosfet

Abstract: SOT23-5 MARKING m5 d28c top marking c1 sot23-5
Contextual Info: LP3470 LP3470 Tiny Power On Reset Circuit Literature Number: SNVS003E LP3470 Tiny Power On Reset Circuit General Description Key Specifications The LP3470 is a micropower CMOS voltage supervisory circuit designed to monitor power supplies in microprocessor

MJE5190

Abstract: 2N5191 TO-225AA to225a 2N5190 2N5192 2N5194 2N5195
Contextual Info: ON Semiconductor 2N5191 2N5192 * Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON NPN

UDG-99153

Abstract: DIL-16 SOIC-16 UCC2918 UCC3918
Contextual Info: UCC2918 UCC3918 application INFO available Low On Resistance Hot Swap Power Manager FEATURES DESCRIPTION • Integrated 0.06Ω Power MOSFET The UCC3918 Low on Resistance Hot Swap Power Manager provides complete power management, hot swap capability, and circuit breaker functions. The only

MJE5190

Abstract: 2N5191 2N5190 2N5190..92 2N5192 2N5194 2N5195
Contextual Info: ON Semiconductort 2N5191 2N5192 * Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON NPN

GAAS FET AMPLIFIER x-band 10w

Abstract: XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006-BD-000V
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

P1006

Abstract: GAAS FET AMPLIFIER x-band 10w XP1006 bonding XP1006 XP1006-BD
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

P1006BD

Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

tanaka gold wire

Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

2N5191

Abstract: 2N5192 2N5193 2N5194 2N5195 T2500S
Contextual Info: ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 w *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP

2N6277

Abstract: 2N6275 1N3879 2N6274 2N6377 2N6277 applications
Contextual Info: ON Semiconductort 2N6274 2N6275 2N6277 * High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device 50 AMPERE POWER TRANSISTORS NPN SILICON 100, 120, 140, 150 VOLTS