POWER MOSFETS Search Results
POWER MOSFETS Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| ICL7667MJA |
|
ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
|
||
| ICL7667MJA/883B |
|
ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) |
|
||
| AM9513ADIB |
|
AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 |
|
||
| CA3130AT/B |
|
CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
|
||
| CA3130T |
|
CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
|
POWER MOSFETS Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| Power MOSFET single-shot and repetitive avalanche ruggedness rating |
|
AN10273 - Power MOSFET single-shot and repetitive avalanche ruggedness rating | Original | 63.09KB | 13 |
POWER MOSFETS Price and Stock
IXYS Corporation IXTT30N60L2MOSFETs 30 Amps 600V |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IXTT30N60L2 | Tube | 300 |
|
Buy Now | ||||||
POWER MOSFETS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
equivalent 2sk2837 mosfetContextual Info: Power MOSFET Heat Sink Design Power MOSFET in Detail 6. Heat Sink Design 6.1 Maximum Allowable Power Dissipation and Radiation Equivalent Circuits When the circuit has been designed for fully adequate thermal stability, the maximum allowable power dissipation PDmax for power MOSFETs can be determined based on the power MOSFET’s |
Original |
||
"CHAPTER 1 Introduction to Power Semiconductors"
Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor
|
Original |
||
|
Contextual Info: Analog Power AM2314N N-Channel 20V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power |
Original |
AM2314N OT-23 | |
|
Contextual Info: Analog Power AM2398N N-Channel 60V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power |
Original |
AM2398N OT-23 | |
linear applications of power MOSFET IRF640
Abstract: irf640 IRF641 IRF640 circuit IRF642 F640 RF642 transistors irf640 IRF643
|
OCR Scan |
IRF640, IRF641, IRF642, IRF643 92CS-3374I IRF643 1F640, linear applications of power MOSFET IRF640 irf640 IRF641 IRF640 circuit IRF642 F640 RF642 transistors irf640 | |
irf310
Abstract: irf 3280 IRFF311 IRFF310 IRFF312 IRFF313
|
OCR Scan |
IRFF310, IRFF311, IRFF312, IRFF313 92CS-33741 IRFF313 FF312 irf310 irf 3280 IRFF311 IRFF310 IRFF312 | |
IRFD110
Abstract: IRFD113 IRF0110 c 3209 IRFD111 IRFD112
|
OCR Scan |
IRFD110, IRFD111, IRFD112, IRFD113 IRFD113 IRFD110 IRF0110 c 3209 IRFD111 IRFD112 | |
SMD surface mount resistor 1R5
Abstract: BUK9E4R4-80E BUK7E1R6-30E BUK9E2R8-60E BUK9Y7R6 BUK9C10-55BIT
|
Original |
AEC-Q101 AEC-Q101, SMD surface mount resistor 1R5 BUK9E4R4-80E BUK7E1R6-30E BUK9E2R8-60E BUK9Y7R6 BUK9C10-55BIT | |
IRFF130
Abstract: IRFF131 IRFF132 IRFF133 C 3259
|
OCR Scan |
IRFF130, IRFF131, IRFF132, IRFF133 0V-100V 92CS-33741 IRFF132 IRFF133 IRFF130 IRFF131 C 3259 | |
|
Contextual Info: APT8020JLL 800V 33A 0.200W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses |
Original |
APT8020JLL OT-227 | |
|
Contextual Info: APT50M50JLL 500V 71A 0.050W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses |
Original |
APT50M50JLL OT-227 | |
Diode 188Contextual Info: APT6010JLL 600V 47A 0.100W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses |
Original |
APT6010JLL OT-227 Diode 188 | |
DIODE 720Contextual Info: APT20M10JLL 200V 185A 0.010W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses |
Original |
APT20M10JLL OT-227 DIODE 720 | |
|
Contextual Info: APT30M30JLL 88A 0.030W 300V POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses |
Original |
APT30M30JLL OT-227 | |
|
|
|||
TH 382Contextual Info: APT12067JLL 1200V 17A 0.670W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses |
Original |
APT12067JLL OT-227 TH 382 | |
|
Contextual Info: APT1003RKLL 1000V 4A 3.00W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses |
Original |
APT1003RKLL O-247 O-220 | |
tc 7680Contextual Info: APT10026L2LL 1000V 38A 0.260W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses |
Original |
APT10026L2LL O-264 O-264 tc 7680 | |
|
Contextual Info: APT6013JLL 600V 39A 0.130W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses |
Original |
APT6013JLL OT-227 | |
|
Contextual Info: APT30M36JLL 76A 0.036W 300V POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses |
Original |
APT30M36JLL OT-227 | |
APT8020JLLContextual Info: APT8020JLL 800V 33A 0.200W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses |
Original |
APT8020JLL OT-227 APT8020JLL | |
reverse-conducting thyristor
Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
|
Original |
MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor | |
APT0406
Abstract: APT0501 APT0502 APTM20AM10STG
|
Original |
APTM20AM10STG APT0406 APT0501 APT0502 APTM20AM10STG | |
APT0406
Abstract: APT0501 APT0502 d90a
|
Original |
APTM50AM38STG Soldera33V APT0406 APT0501 APT0502 d90a | |
|
Contextual Info: APTM20DAM10TG Boost chopper MOSFET Power Module VBUS NTC2 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction VBUS SENSE CR1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance |
Original |
APTM20DAM10TG APTM20DAM10T | |