POWER MOSFET J 162 Search Results

20n60s1

Abstract: 60v 10a p type mosfet 20n60s
Contextual Info: / FMP20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] 2.7 ±0.1 ±0 .2 6.4 ±0.2 φ3 .6 3.6 ±0.2 Applications UPS Server Telecom Power conditioner system

20N60S1

Abstract: Fmv20n60 FMV20N60S1 fuji electric lot code 20N60S
Contextual Info: / FMV20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg Outline Drawings [mm]

FMW20N60S1

Abstract: 20n60s1 20n60s mosfet 600V 20A FMW20N60S1HF
Contextual Info: / FMW20N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg Outline Drawings [mm]

20N60S1

Abstract: FMH20N60S1 600V 20A N-Channel MOSFET TO-3P
Contextual Info: / FMH20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] φ3.2± 0.1 5±0.1 1.5±0.2 4.5±0.2 Drain D 3 ±0.2 1.5 Applications 15.5max 13 ± 0.2 10 ± 0.2

lv 5682

Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837
Contextual Info: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically

EPC-19 TRANSFORMER

Abstract: AHB ZVS AN9506 resonant single ended forward converter HIP4081 phase shifted full-bridge ZVS dc-dc converter 74ACT86 Full-bridge series resonant converter an9325 EPC TRANSFORMER
Contextual Info: No. AN9506 Intersil Intelligent Power April 1995 A 50W, 500kHz, Full-Bridge, Phase-Shift, ZVS Isolated DC to DC Converter Using the HIP4081A Author: David J. Hamo Introduction ability to vary the turn-on delays of both upper and lower MOSFET switches. This is an essential feature for realizing

AHB ZVS

Abstract: EPC-19 TRANSFORMER TDK Ferrite Core PC40 500w Full bridge transformer AN9506 HIP4081 pwm controller 10Turns Design of Isolated Converters Using Simple Switch HIP4081 single phase bridge fully controlled rectifier
Contextual Info: No. AN9506 Intersil Intelligent Power April 1995 A 50W, 500kHz, Full-Bridge, Phase-Shift, ZVS Isolated DC to DC Converter Using the HIP4081A Author: David J. Hamo Introduction ability to vary the turn-on delays of both upper and lower MOSFET switches. This is an essential feature for realizing

EPC-19 TRANSFORMER

Abstract: AN9506 an9325 BAE-030D 500w Full bridge transformer ZVS phase-shift converters AHB ZVS 1/3 phase bridge fully controlled rectifier TDK Ferrite Core PC40 500W dc/dc converter pwm
Contextual Info: Harris Semiconductor No. AN9506 Harris Intelligent Power April 1995 A 50W, 500kHz, Full-Bridge, Phase-Shift, ZVS Isolated DC to DC Converter Using the HIP4081A Author: David J. Hamo Introduction ability to vary the turn-on delays of both upper and lower MOSFET switches. This is an essential feature for realizing

Contextual Info: IRFP440 A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Rugged Gate Oxide Technology ^DS on = 0.85Î2 ♦ Lower Input Capacitance lD ♦ Avalanche Rugged Technology = 8.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

HA1190

Contextual Info: IRFP440A A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Rugged Gate Oxide Technology ^DS on = 0.85Î2 ♦ Lower Input Capacitance lD ♦ Avalanche Rugged Technology = 8.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

C1413

Abstract: T039 package
Contextual Info: Aß N -C h an n e l RF Power MOSFET UF2801K1 1 Watt, 100-500 MHz, 28 V Features • • • • • lD j DMOS Structure Lower Capacitances for Broadband Operation Lower Noise Floor 100 MHz to 500 MHz Operation Common Source T039 Package Configuration Absolute Maximum Ratings at 25°C

Contextual Info: IRF340 A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

Contextual Info: IRFP340A A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

Contextual Info: s e MIKRDn Absolute Maximum Ratings Symbol V rrm Ifsm l2t Tsolder Tvj, T stg Tvj, Tstg Conditions ' Values Units 1200 V 180 162 375 -5 5 + 150 A A^s °C SEMICELL CAL - Diode Chips3 SKCD 18C 120 I > 2 bondwires 300 nm 0 ) tp = 10 ms; sin; T j = 150 °C tp = 10 ms; sin; T j = 150 °C

Contextual Info: IRFW/I630A FEATURES Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge 200 V ^ D S o n = 0.4 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V ■ Low RDS(ON) : 0.333 £l(Typ.) II

547 MOSFET

Abstract: *c1251c
Contextual Info: SSP1N50A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss ” 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 jjA Max. @ VOS= 500V

Contextual Info: IRFW/I630A Advanced Power MOSFET FEATURES BV DSS = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n - ■ Lower Input Capacitance In = 9 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V

Contextual Info: IRFW/I630A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 |uA Max. @ VDS = 200V

VM-50V

Contextual Info: IRFR/U320A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 |JA Max. @ VOS= 400V

Lm 4046

Contextual Info: SSS1N50A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 ¿¿A Max. @ Lower R,DS{ON) 4.046 a (Typ.)

d2p03

Contextual Info: M O T O R O LA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MM DF2P03HD Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors M otorola Preferred Device MiniMOS™ devices are an advanced series of power MOSFETs w hich utilize M otorola’s High Cell D ensity H D TM O S process.

B1470

Abstract: K775 mitsubishi MOSFET F3005 FS20KM5 FS20KM-5 MAX240 MITSUBISHI MOSFET FS
Contextual Info: MITSUBISHI Neh POWER MOSFET FS20KM-5 HIGH-SPEED SWITCHING USE FS20KM-5 OUTLINE DRAWING Dimensions in mm 1 0 ± 0 .3 • V d s s . 2 .8 ± 0 . 2 250V • rDS ON (MAX) . 0 .1 9 Q

B1470

Abstract: FS20KM-5 K775 M-1510 MAX240 FS 8201 mitsubishi fs20km-5
Contextual Info: MITSUBISHI Neh POWER MOSFET FS20KM-5 HIGH-SPEED SWITCHING USE FS20KM-5 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 • V dss . 2.8 ± 0 .2 250V • rDS ON (MAX) . 0 .1 9Q • Id

mosfet 4842

Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA D esigner's Data Sheet MTP23P06V TMOSV™ Power Field Effect Transistor Motorola Preferred D*vlca P-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about on e-ha lf that of standard MOSFETs. This