POWER MOSFET 30 A, 60 V, LOGIC LEVEL Search Results

Contextual Info: SUD40N06-25L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A)a 0.022 @ VGS = 10 V 30 0.025 @ VGS = 4.5 V 30 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested

SUD40N06-25L

Contextual Info: SUD40N06-25L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A)a 0.022 @ VGS = 10 V 30 0.025 @ VGS = 4.5 V 30 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested

Contextual Info: SUD40N06-25L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A)a 0.022 @ VGS = 10 V 30 0.025 @ VGS = 4.5 V 30 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested

IRLSZ44A

Contextual Info: IRLSZ44A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic Level Gate Drive RDS on = 0.025 Ω Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 30 A Lower Input Capacitance Improved Gate Charge TO-220F Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V

IRLZ34A

Contextual Info: IRLZ34A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS on = 0.046 Ω Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 30 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V

HITACHI Power MOSFET Arrays

Abstract: 2sk1299 2SK975 2sk1306 2SK1919 2SK970 2SK971 2SK972 2SK973 4AK15
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

TL494

Abstract: TC429
Contextual Info: SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER TC429 TC429 SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC429 is a high-speed, single CMOS-level translator and driver. Designed specifically to drive highly capacitive power MOSFET gates, the TC429 features 2.5Ω output

high-speed power mosfet 2Mhz

Abstract: TL494 tl494 mosfet SG1524 application note tl494 24v power switch tl494 tl494 application notes TC429CPA TC429 data sheet tl494
Contextual Info: 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER TC429 TC429 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC429 is a high-speed, single CMOS-level translator and driver. Designed specifically to drive highly capacitive power MOSFET gates, the TC429 features 2.5Ω output

Logic Level N-Channel Power MOSFET

Abstract: Book Microelectronic logic level n channel MOSFET CMT60N06
Contextual Info: CMT60N06 N-CHANNEL Logic Level Power MOSFET APPLICATION FEATURES DC motor control Low ON Resistance UPS Low Gate Charge Class D Amplifier Peak Current vs Pulse Width Curve Inductive Switching Curves VDSS RDS ON Typ. ID 60V 15.8mΩ 60A PIN CONFIGURATION SYMBOL

Contextual Info: CMT60N06G N-CHANNEL Logic Level Power MOSFET APPLICATION FEATURES ‹ DC motor control ‹ Low ON Resistance ‹ UPS ‹ Low Gate Charge ‹ Class D Amplifier ‹ Peak Current vs Pulse Width Curve ‹ Inductive Switching Curves VDSS RDS ON Typ. ID 60V 15.8mΩ 60A

mic4225

Abstract: mic422 MIC4224 GRM31MR71H105KA01 mosfet schematic solenoid driver si4174dy 8pin dual gate driver Motor Driver Circuit schematic 20 ampere MIC4223YM vishay 2.2nf 2kv
Contextual Info: MIC4223/MIC4224/MIC4225 Dual 4A, 4.5V to 18V, 15ns Switch Time, Low-Side MOSFET Drivers with Enable General Description Features The MIC4223/MIC4224/MIC4225 are a family of a dual 4A, High-Speed, Low-side MOSFET drivers with logic-level driver enables. The devices are fabricated on Micrel’s

tl494 mosfet

Abstract: se5560 Power Supply TL494 tl494 applications tc4420 tl494 application notes tl494 design tl494 equivalent TC429 DRIVERS high-speed power MOSFET
Contextual Info: 1 TC429 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER 2 FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC429 is a high-speed, single CMOS-level translator and driver. Designed specifically to drive highly capacitive power MOSFET gates, the TC429 features 2.5Ω output

PSMN4R3-30PL

Abstract: transistor C982 PSMN4R3 43-m diode
Contextual Info: PSMN4R3-30PL N-channel 30 V 4.3 mΩ logic level MOSFET Rev. 01 — 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

PSMN1R6-30YL

Contextual Info: PSMN1R6-30YL N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK Rev. 01 — 23 October 2009 Objective data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

PSMN2R0-30PL

Contextual Info: PSMN2R0-30PL N-channel 30 V 2.1 mΩ logic level MOSFET Rev. 01 — 24 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

PSMN1R3-30YL

Contextual Info: PSMN1R3-30YL N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK Rev. 02 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

PSMN1R7-30YL

Abstract: transistor C982 An10273
Contextual Info: PSMN1R7-30YL N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK Rev. 04 — 20 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

Contextual Info: PSMN1R5-30YL N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK Rev. 01 — 9 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

Contextual Info: LF PA K 56D BUK9K17-60E Dual N-channel 60 V, 17 mΩ logic level MOSFET 21 August 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power SO8 package using TrenchMOS technology. This product has been designed and qualified to

transistor C982

Abstract: PSMN2R7-30PL
Contextual Info: PSMN2R7-30PL N-channel 30 V 2.7 mΩ logic level MOSFET Rev. 01 — 26 February 2010 Objective data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

PSMN1R6-30PL

Contextual Info: PSMN1R6-30PL N-channel 30 V 1.7 mΩ logic level MOSFET Rev. 02 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

Contextual Info: PSMN5R8-30LL N-channel QFN3333 30 V 5.8 mΩ logic level MOSFET Rev. 01 — 3 June 2010 Objective data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power

tl494 mosfet

Abstract: TC429 SG1526 966A 200khz power mosfet DRIVERS high-speed power MOSFET Power Supply TL494 tc4420 TC429CPA TC429EPA
Contextual Info: TC429 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC429 is a high-speed, single CMOS-level translator and driver. Designed specifically to drive highly capacitive power MOSFET gates, the TC429 features 2.5Ω output

PSMN2R7-30PL

Contextual Info: PSMN2R7-30PL N-channel 30 V 2.7 mΩ logic level MOSFET in TO-220 Rev. 02 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic