POWER BJT Search Results

BLY93a

Contextual Info: Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. P a r t Number: BLY93A DescrIption: BJTs , Si NPN Power HP" The RF Line 40 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR

220v AC voltage stabilizer schematic diagram

Abstract: smps circuit diagram 450w DATASHEET OF IC 741C ATX smps troubleshooting atx power supply 450W schematic PWM 220v ac stabilizer aPPLICATION NOTES ON KA3525A ka3842a application note atx power supply 450W SG6105
Contextual Info: POWER S O L U T I O N S Fairchild’s Power Solutions Fairchild Semiconductor is a global leader in delivering energy-efficient power analog, power discrete, and optoelectronic solutions. These products maximize energy savings in power-sensitive applications such as power

8 pin ic 9435

Abstract: 9435, ic 9435 transistor 9435a 9435 sot ic 9435 9435 SOT223 marking code 9435 9435 a BD 135 transistor
Contextual Info: MMJT9435 Preferred Device Bipolar Power Transistors PNP Silicon Features • Pb−Free Packages are Available • Collector −Emitter Sustaining Voltage − • • • • • http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS

power BJT

Abstract: bjt specifications IW1810 circuits using BJT Flyback transformer Computer Monitor bjt gate drive circuit JB 71 JESD22-A114 bjt 100 Application Note AC-DC battery charger constant
Contextual Info: iW1810 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT 1.0 Features Intelligent AC-DC and LED Power 2.0 Description ● Primary-side feedback eliminates opto-isolators and simplifies design ● Internal 800-V bipolar junction transistor BJT

9435 transistor

Abstract: 9435a 8 pin ic 9435 9435, ic ic 9435 amp 9435 9435 sot 9435 63 CIRCUIT DIAGRAM T 9435 MMJT9435
Contextual Info: MMJT9435 Preferred Device Bipolar Power Transistors PNP Silicon Features • Pb−Free Packages are Available • Collector −Emitter Sustaining Voltage − • • • • • http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS

gsm900 DCS1800

Contextual Info: RF3140 QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Typical Applications • Portable Battery-Powered Equipment • Power StarTM Module 0.400 TYP Product Description The RF3140 is a high-power, high-efficiency power amplifier module with integrated power control. The device is

Contextual Info: RF3140 QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Typical Applications • Portable Battery-Powered Equipment • Power StarTM Module 0.400 TYP Product Description The RF3140 is a high-power, high-efficiency power amplifier module with integrated power control. The device is

Contextual Info: RF3140 QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Typical Applications • Portable Battery-Powered Equipment • Power StarTM Module 0.400 TYP Product Description The RF3140 is a high-power, high-efficiency power amplifier module with integrated power control. The device is

Contextual Info: RF3140 QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Typical Applications • Portable Battery-Powered Equipment • Power StarTM Module 0.400 TYP Product Description The RF3140 is a high-power, high-efficiency power amplifier module with integrated power control. The device is

Contextual Info: iW1690 Low-Power Off-line Digital PWM Controller 1.0 Features Intelligent AC-DC and LED Power 2.0 Description • Primary-side feedback eliminates opto-isolators and simplifies design • Direct drive of BJT switching device • Multi-mode operation for highest overall efficiency

Contextual Info: RF3140 Preliminary QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Typical Applications • Portable Battery-Powered Equipment • Power StarTM Module 0.400 TYP Product Description The RF3140 is a high-power, high-efficiency power amplifier module with integrated power control. The device is

DCS1800

Abstract: EGSM900 GSM900 RF3140 100khz filter
Contextual Info: RF3140 Pb-Free Product QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Typical Applications • Portable Battery-Powered Equipment • Power StarTM Module 0.400 TYP Product Description The RF3140 is a high-power, high-efficiency power amplifier module with integrated power control. The device is

RF93

Contextual Info: RF9340 TRI-BAND GSM900/DCS/PCS POWER AMP MODULE Typical Applications • GPRS Class 12 Compatible • Portable Battery-Powered Equipment • Power StarTM Module 0.400 TYP 1.200 TYP Product Description The RF9340 is a high-power, high-efficiency power amplifier module with integrated power control. The device is

Contextual Info: RF9340 TRI-BAND GSM900/DCS/PCS POWER AMP MODULE Typical Applications • GPRS Class 12 Compatible • Portable Battery-Powered Equipment • Power StarTM Module 0.400 TYP 1.200 TYP Product Description The RF9340 is a high-power, high-efficiency power amplifier module with integrated power control. The device is

Contextual Info: i, U na. <^E.mi- 2ona.uctoi 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N1537A GE PNP POWER BJT PACKAGE STYLE: TO-3 DESCRIPTION The 2N1537A is a Ge PNP Power BJT. It is packaged in a TO-3 Package.

reverse-conducting thyristor

Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
Contextual Info: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate

Contextual Info: RF2163 RF21633 V, 2.5GHz Linear Power Amplifier 3V, 2.5GHz LINEAR POWER AMPLIFIER 19dB Small Signal Gain  High Power Added Efficiency  Patent Pending Power Sense Technology  1800MHz to 2500MHz Frequency Range 2.5GHz ISM Band Applications  PCS Communication Systems

RF6561

Abstract: RF6261 RF6261B
Contextual Info: RFRD6461 RFRD64613G PowerSmart Power Platform 3G POWERSMART™ POWER PLATFORM PCB Footprint: 7.6mm x 15.3mm x 1.02mm BATTERY RF DETECTOR OUT       Boost - Buck DCDC Converter 2 Component Placement Power Platform  RF6261B Power Amplifier:

Contextual Info: BD370A16 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: KSP1145 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)325 I(C) Max. (A)10 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC4217 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)300 I(C) Max. (A)200m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: SDT4944 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)275 V(BR)CBO (V)300 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)53 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SA968Y

Contextual Info: 2SA968Y Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)160 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: SDT4941 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)225 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)53 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)