POWER AMPLIFIER S BAND SPECIFICATION Search Results

RF Amplifier 500w 175 mhz

Abstract: ft3000m MIMIC control panel CPI Helix tube VTG6292 500w amplifier a 40 watt power supply 500W D Amplifier 2780C
Contextual Info: CPI 500W S/C-Band TWT Amplifier for Instrumentation Applications S/C - Band The VZS/C-2780C2 S/C-Band 500 watt TWT High Power Amplifier features high efficiency, small size and an integral computer interface. Safety Provides 500 watts of power in the 2.0 to

FMM5049

Abstract: S-Band Power Amplifier S-Band high Power Amplifier S-band mmic MMIC POWER AMPLIFIER S-BAND FMM5049VT MMIC s-band amplifier
Contextual Info: FMM5049VT L,S-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=41.0dBm typ. ・High Linear Gain: GL=33.0dB (typ.) ・Broad Band: 1.8~2.3GHz ・Hermetically sealed Package DESCRIPTION The FMM5049VT is a high-gain wide-band three-stage MMIC amplifier

04 monolithic amplifier

Contextual Info: CHA5082 S Band Power Amplifier GaAs Monolithic Microwave IC Description The CHA5082 is a S band monolithic three stage power driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.

s band

Abstract: CHA5082
Contextual Info: CHA5082 S Band Power Amplifier GaAs Monolithic Microwave IC Description The CHA5082 is a S band monolithic three stage power driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.

Contextual Info: RF3928 RF3928 280W GaN Wide-Band Pulsed Power Amplifier 2.8GHz to 3.4GHz The RF3928 is a 50V 280W high power discrete amplifier designed for S-Band pulsed radar, air traffic control and surveillance, and general purpose broadband amplifier applications. Using an advanced high

Contextual Info: RF3928B RF3928B 380W GaN Wide-Band Pulsed Power Amplifier 2.8GHz to 3.4GHz The RF3928B is a 65V 380W high power discrete amplifier designed for S-Band pulsed radar, air traffic control and surveillance, and general purpose broadband amplifier applications. Using an advanced

Contextual Info: Part Number: Integra MPAL2731M15 TECHNOLOGIES, INC. 50 Ohm Matched  Requires no external impedance matching circuitry S-Band Radar Miniature Power Amplifier Part number MPAL2731M15 is a miniaturized power amplifier which is internally matched to 50 ohms. It is designed for S-Band radar

Contextual Info: Part Number: Integra IBP3135M150 TECHNOLOGIES, INC. S-Band Radar Pallet Amplifier Silicon Bipolar Technology − Ultra-high fT Class C Operation − High Efficiency Part number IBP3135M150 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems

Amplifier

Abstract: 6 ghz amplifier 10w Amplifier 10W S-band PA2-23 6 ghz amplifier 20w
Contextual Info: S BAND POWER AMPLIFIER PA-2234-04 SPECIFICATION 1. Frequency Rang: . . . . . . . . . . . . . . . . . . . . . 2.3÷2.4 GHz 2. Power Output @ 1dB c.p: . . . . . . . . . . . . . . . . 20W CW min 3. Gain : . . . . . . . . . . . . . . . . . . . . . . . . . . . 50dB min

6 ghz amplifier 10w

Abstract: amplifier PA-2234-03 s band
Contextual Info: S BAND POWER AMPLIFIER PA-2234-03 SPECIFICATION 1. Frequency Rang: . . . . . . . . . . . . . . . . . . . . . 2.3÷2.4 GHz 2. Power Output @ 1dB c.p: . . . . . . . . . . . . . . . . 10W CW min 3. Gain : . . . . . . . . . . . . . . . . . . . . . . . . . . . 50dB min

Contextual Info: E AWT918 TX POWER MMIC h m p iG ic s ' A dvanced Product Information Your GaAs IC Source RevO CELLULAR/PCS Dual Band GaAs Power Amplifier 1C DESCRIPTION: The AWT918 is a monolithic GaAs Power Amplifier. It can be used in the following dual band handset applications:GSM900/DCS1800,

S-AU82VL

Abstract: TOSHIBA RF Power Module 5-53P
Contextual Info: S-AU82VL TOSHIBA RF POWER AMPLIFIER MODULE S-AU82VL ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

S-AU83H

Abstract: 5-53P
Contextual Info: S-AU83H TOSHIBA RF POWER AMPLIFIER MODULE S-AU83H ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :32W Min. ･Power Gain :28.0dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

S-AV35

Abstract: RF power amplifier 10mW RF Power Amplifier Module
Contextual Info: S-AV35 TOSHIBA RF POWER AMPLIFIER MODULE S-AV35 ○FM RF POWER AMPLIFIER MODULE for VHF MARINE BAND ･Output Power :32W Min. ･Power Gain :35.0dB (Min.) ･Total Efficiency:50% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

S-AV33

Abstract: 5-53P
Contextual Info: S-AV33 TOSHIBA RF POWER AMPLIFIER MODULE S-AV33 ○FM RF POWER AMPLIFIER MODULE for VHF BAND ･Output Power :32W Min. ･Power Gain :28.0dB (Min.) ･Total Efficiency:45% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

S-AU82L

Abstract: SAU82L 5-53P
Contextual Info: S-AU82L TOSHIBA RF POWER AMPLIFIER MODULE S-AU82L ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

S-AU82H

Abstract: 5-53P
Contextual Info: S-AU82H TOSHIBA RF POWER AMPLIFIER MODULE S-AU82H ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

TOSHIBA RF Power Module S-AV36

Abstract: S-AV36 toshiba S-AV36 sav36 5-53P VDD12
Contextual Info: S-AV36 TOSHIBA RF POWER AMPLIFIER MODULE S-AV36 ○FM RF POWER AMPLIFIER MODULE for VHF BAND ･Output Power :80W Min. ･Power Gain :32.0dB (Min.) ･Total Efficiency:45% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

toshiba S-AV32

Abstract: S-AV32 60W VHF circuit RF amplifier 5-53P
Contextual Info: S-AV32 TOSHIBA RF POWER AMPLIFIER MODULE S-AV32 ○FM RF POWER AMPLIFIER MODULE for VHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:45% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

S-AV37

Abstract: RF power amplifier 10mW
Contextual Info: S-AV37 TOSHIBA RF POWER AMPLIFIER MODULE S-AV37 ○FM RF POWER AMPLIFIER MODULE for VHF MARINE BAND ･Output Power :32W Min. ･Power Gain :35.0dB (Min.) ･Total Efficiency:50% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

S-AV35

Abstract: "RF Power Amplifier" RF power amplifier 10mW
Contextual Info: S-AV35 TOSHIBA RF POWER AMPLIFIER MODULE S-AV35 ○FM RF POWER AMPLIFIER MODULE for VHF MARINE BAND ･Output Power :32W Min. ･Power Gain :35.0dB (Min.) ･Total Efficiency:50% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

Contextual Info: Advanced Product Information Y our G âA s IC S o u rce Rev 4 900 MHz Band DAMPS GaAs Power Amplifier IC DESCRIPTION The AWT0901X is a monolithic Power Amplifier suited for DAMPS cellular telephone applications. FEATURES: * High Output Power * High Efficiency

S-AU83L

Abstract: 5-53P "power amplifier" sau83l
Contextual Info: S-AU83L TOSHIBA RF POWER AMPLIFIER MODULE S-AU83L ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :32W Min. ･Power Gain :28.0dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

Contextual Info: S−AU94 TOSHIBA RF POWER AMPLIFIER MODULE S−AU94 UHF BAND FM POWER AMPLIFIER MODULE HAND-HELD TRANSCEIVER ABSOLUTE MAXIMUM RATINGS Tc = 25℃ CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VDD 17 V DC Supply Voltage VGG 6 V Input Power Pi 75 mW Output Power