POWER AMPLIFIER GSM Search Results

Contextual Info: WIRELESS - Power Amplifier AWT0908 TX POWER MMIC Advanced Product Information Rev 0 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The AWT0908X is a monolithic Power Amplifier IC suited for GSM cellular telephone Applications FEATURES High Output Power

Contextual Info: WIRELESS - Power Amplifier AWT0908 TX POWER MMIC Advanced Product Information Rev 0 900 MHz Band GSM GaAs Power Amplifier IC DESCRIPTION The AWT0908X is a monolithic Power Amplifier IC suited for GSM cellular telephone Applications FEATURES High Output Power

Contextual Info: WIRELESS - Power Amplifier AWT0904 TX POWER MMIC Advanced Product Information Rev 7 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The AWT0904 is a monolithic Power Amplifier 1C suited for GSM cellular telephone Applications FEATURES Single Supply High Output Power

200938A

Abstract: SKY77336 GMSK applications Power Amplifier Module for GSM polar loop transmitter ohms-0 skyworks helios 12-PIN DCS1800 PCS1900
Contextual Info: APPLICATION NOTE SKY77336 Power Amplifier Module – Evaluation Information Applicability: SKY77336 Power Amplifier Modules INTRODUCTION The latest Skyworks GSM Power Amplifier Modules PAM featuring the new CMOS Collector Voltage Amplitude Controller (COVAC)

bgy284e

Abstract: BGY502 BGY288 PHILIPS GSM ic Power Amplifier Module for GSM philips GSM 1800 transceiver pa 900 amplifier UAA3587
Contextual Info: BGY284E GSM/GPRS/EDGE Mobile phone RF power amplifier power amplifier module with integrated power control loop Measuring only 80 mm2, the BGY284E is an ultra-small GSM/GPRS/EDGE power amplifier module with an accurate, integrated power control loop. Combined with

Contextual Info: WIRELESS - Power Amplifier AWT0904 TX POWER MMIC Advanced Product Information Rev 7 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The A W T0904 is a monolithic Power Amplifier 1C suited for GSM cellular telephone Applications FEATURES Single Supply

Contextual Info: LMV242 LMV242 Dual Output, Quad-Band GSM/GPRS Power Amplifier Controller Literature Number: SNWS014B LMV242 Dual Output, Quad-Band GSM/GPRS Power Amplifier Controller General Description Features The LMV242 is a power amplifier PA controller intended for

BGY284

Abstract: BGY502 bgy284e
Contextual Info: BGY284 GSM quad-band amplifier Ultra-small power amplifier module with integrated power control loop Measuring only 64 mm2, the BGY284 is an ultra-small, GSM power-amplifier module with an integrated power control loop. Designed for 850, 900, 1800 and 1900 MHz GSM phones,

BGY46B

Abstract: TRANSISTOR regulator fm 513 diode piezoelectric mobile charger Analog Voice scrambler dtmf interface with microcontroller DTMF mobile fm operational amplifier SA612 All Microphone
Contextual Info: Philips Semiconductors Semiconductors for Telecom systems Alphanumeric index page BGY46A UHF power amplifier module 42 BGY46B UHF power amplifier module 43 BGY47A UHF power amplifier module 44 BGY95A/B UHF amplifier module 45 BGY96A/B UHF amplifier module

Contextual Info: APPLICATION NOTE SKY77354 Power Amplifier Module – Evaluation Board Information Applicability: SKY77354 Power Amplifier Module for Quad-Band GSM/ GPRS/ EDGE Introduction This Application Note provides the customer with information that will assist in the evaluation of the SKY77354 Power Amplifier

Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip

HF power amplifier

Abstract: ze 003 ic CGY2010G LQFP48 LQFP64 LQFP80 PCA5075 SA1620
Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip

Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2013G GSM 4 W power amplifier Objective specification File under Integrated Circuits, IC17 1996 Jul 12 Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45%

gsm signal amplifier

Abstract: Power Amplifier Module for GSM gsm 0308 DLT3202 GSM900 GSM RF module
Contextual Info: Preliminary DLT3202 3.5V Triple-Band Power Amplifier Module for GSM900 and DCS1800/PCS1900 Applications with Integrated Power Controller Description Features The DLT3202 is a triple-band Power Amplifier Module PAM designed for used as the final RF amplifier in GSM900 and

DLT4204

Abstract: GSM900 gsm amplifier schematic
Contextual Info: Preliminary DLT4204 3.5V Quad-Band Power Amplifier Module for GSM850/900 and DCS1800/PCS1900 Applications with Integrated Power Controller Description Features The DLT4204 is a quad-band Power Amplifier Module PAM designed for used as the final RF amplifier in GSM850/900

Contextual Info: Order this document by MC33169/D MC33169 Advance Information GaAs Power Amplifier Support IC GaAs POWER AMPLIFIER SUPPORT IC The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM, PCN and DECT. This

CGY2013G

Abstract: LQFP48 PCA5075 SA1620 SMD0603
Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.

ftx 79

Abstract: GMSK applications GSM900
Contextual Info: AWT6172 GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control PRELIMINARY DATA SHEET - Rev 1.3 PRODUCT DESCRIPTION features This quad band power amplifier module supports dual, tri and quad band applications for both GMSK and 8-PSK modulation schemes. There are two amplifier

GSM900

Abstract: AWT6172
Contextual Info: AWT6172 GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control PRELIMINARY DATA SHEET - Rev 1.4 PRODUCT DESCRIPTION features This quad band power amplifier module supports dual, tri and quad band applications for both GMSK and 8-PSK modulation schemes. There are two amplifier

Contextual Info: AWT6172 GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control PRELIMINARY DATA SHEET - Rev 1.4 PRODUCT DESCRIPTION features This quad band power amplifier module supports dual, tri and quad band applications for both GMSK and 8-PSK modulation schemes. There are two amplifier

Power Amplifier GSM

Abstract: QFN-20 motorola marking MRFIC0970 GSM900
Contextual Info: Order this document by MRFIC0970PP/D MRFIC0970 Product Preview 3.2 V GSM GaAs Integrated Power Amplifier GSM 880 – 915 MHz INTEGRATED POWER AMPLIFIER The MRFIC0970 is a single supply, RF power amplifier designed for the 2.0 W GSM900 handheld radios. The device is packaged in the QFN–20

Contextual Info: MOTOROLA Advance Information GaAs POWER AMPLIFIER SUPPORT IC GaAs Power Amplifier Support 1C The MC33169 is a support IC lo r G aAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM, PCN and DECT. This device provides negative voltages for full depletion of Enhanced MESFETs

smd marking AAAA

Abstract: marking gain stage GaAs MMIC AMPLIFIER 0.3 GMSK 0.3 GMSK 900mhz amplifier 900mhz HP MMIC marking code 5 smd marking f2 vtr 150 CGY92
Contextual Info: GaAs MMIC CGY92 Datasheet *Power amplifier for GSM or AMPS application *Fully integrated 2 stage amplifier *Operating voltage range: 2.7 to 6 V *Overall power added efficiency 45 %

GaAs MESFET amplifier with high input impedance

Abstract: mesfet datasheet by motorola DCS1800 GSM900 MMM5062 PCS1900
Contextual Info: Fact Sheet Freescale Semiconductor, Inc. MMM5062 QUAD-BAND, SINGLE POWER SUPPLY, POWER AMPLIFIER MODULE Freescale Semiconductor, Inc. For GSM/GPRS Handsets The MMM5062 is a Quad-Band, Single Power Supply, Power Amplifier Module for use in GSM/GPRS cellular