POWER Search Results

A1619A

Abstract: b1241
Contextual Info: SN54ABT32318, SN74ABT32318 18-BIT TRI-PORT UNIVERSAL BUS EXCHANGERS SCBS180A-JUNE 1 9 9 2 - REVISED JULY 1994 Members of the Texas Instruments Wldebus+ Family State-of-the-Art EPIC-IlB™ BICMOS Design Significantly Reduces Power Dissipation Typical V q l p Output Ground Bounce

TLG145K

Abstract: TLR145K TLR144K TLR143 TLR143K toshiba suffix TLR146K TLG147K TLR146 TLG143K
Contextual Info: TOSHIBA TLG14D K,TLR14D K TOSHIBA LED LAMP TLG143K, TLG144K, TLG145K, TLG147K, TLR140K TLR143K, TLR144K, TLR145K, TLR146K, TLR147K LED LAMP WITH BRACKET MAXIM UM RATINGS Ta= 25°C CHARACTERISTIC Forward Current RED GREEN Reverse Voltage RED Power Dissipation

Low Drop Out Regulators

Abstract: 7585C DIL 16
Contextual Info: o UCC2930-3\UCC3930-3 IIMTKORATKO C IR C U IT S ADVANCED INFORMATION UNITRODE Cellular Telephone Power Converter DESCRIPTION FEATURES BiCMOS Low Power RF/Cellular power management Negative 2.5 Volt @ 5 m A regulator for GaAs MESFET Separate Micro-power 3.3 V logic

Contextual Info: SN75LBC241 LOW-POWER LinBiCMOS MULTIPLE DRIVERS AND RECEIVERS SLLS137E - MAY 1992 - REVISED JANUARY 1999 • Operates With Single 5-V Power Supply • Meets or Exceeds the Requirements of TIA/EIA-232-F and ITU Recommendation V.28 • Improved Performance Replacement for

Contextual Info: G T 1 5 J 1 0 2 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 1 0 ± 0 -3 . ¿ 3 .2 ± 0 .2 2 .7 ± 0 .2 . High Input Impedance . High Speed : t£=0.35iJs Max. . Lou Saturation Voltage : VcE(sat)"*.OV(Max.) . Enhancement-Mode MAXIMUM RATINGS (Ta«250C)

MP4007

Contextual Info: SILICON NPN EPITAXIAL TYPE POWER TRANSISTOR 4 IN 1 MP4007 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 25.2 ± 0.2 LOAD SWITCHING. . Small Package by Full Molding. (SIP 10 Pin) . High Collector Power Dissipation.

IGBT loss calculate

Contextual Info: n j] DN-57 b U N IT R O D E Design Note Power Dissipation Considerations for the UC3726N/UC3727N IGBT Driver Pair by Mickey McClure Application Engineer Motion Control Products Optimized or driving Insulated Gate Bipolar Transis­ tors (IGBTs , the UC3726N/UC3727N IGBT driver

UC3843 application note soft start

Abstract: uc3843 flyback supply opto-coupler buck uc3843 5A uc3843 flyback opto-coupler UC3824 buck boost converter UC3824 buck UC3843 in isolated flyback converter flyback uc3843 application UC3843 buck converter application note uc3843 12v 5a supply design
Contextual Info: in [R i1Dl ¡-'ART rjirjl IF R ' h ! r. .¡ m u n ii UL l 'i Hi I i UL L .• di Constant Power HID Lamp Controller DC-DC and Battery DC-DC and Battery Off-line DC-DC and Battery Boost, Flyback Buck, Boost Buck, Boost Forward, Flyback Buck, Boost 2% 1.5% 1.5%

M 5110

Abstract: m5110 UM5110
Contextual Info: UD/15110 10 Sec Voice Synthesizer with Serial/Random Trigger Features • a ■ ■ Operating Voltage Range: 2.4V - 5.2V Power supply mode selectable by PWD 10 second voice duration 12 voice sections with serial or random trigger functions ■ The STA/STB can option for stop pulse, busy, or LED

2SD1294

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SD1294 POWER REGULATOR FOR LINE OPERATED TV. Unit in mm # 3 .2 ± Q 2 FEATURES : . Excellent Wide Safe Operating Area (80 W.s z at Tc=25°C) . eo . Included Abalanche Diode : Vz=60±15V . High DC Current Gain

Contextual Info: Texas Instruments TGA8300 Monolithic 2- to 18-GHz Amplifier Features • ■ ■ ■ ■ 18-dBm typical output power at 1-dB gain compression 6.5-dB gain Input and output SWR less than 2:1 Size: 0.093 x 0.064 x 0.006 inch Recessed V ^ m gate structure Description

Contextual Info: T ♦ / ',A D I M r f f " 1601N. Clancy, Visalia, CA 93291 209 651-2222 Fax (209) 651-0188 ITT Telex N um ber: 4994462 Cable A ddress: "T R IM A G " I rfc J ~ I l\l~ rlflV ]# IllC. ^ y0 « . . POWER Specialists 962 ZW SERIES 10 Watt, Low Profile DC-DC CONVERTER

Contextual Info: SILICON NPN EPITAXIAL TY P E 2SC3420 STROBO FLASH APPLICATIONS. Unit in nun MEDIMUM POWER AMPLIFIER APPLICATIONS. Ì.3MAX. FEATURES: . High DC Current Gain : hpE=140~600 Vc e =2V, Ic =0.5A bFE=70(Min.) (Vqj;=2V, Ic =4A) . Low Saturation Voltage : vCE(sat)=l •0(Max.) (Ic =4A, Ib =0.1A)

SMNS405A

Abstract: cms405 CMS408 CMS406
Contextual Info: CMS405, CMS406 4 MEGABYTE CMS407, CMS408 2 MEGABYTE DRAM MEMORY CARDS SMNS405A-JUNE1991-REVISED JANUARY 1993 * Credit Card Size 85.6 mm x 54 mm x 60-PIN MEMORY CARD (CONNECTOR VIEW 3.4 mm) Single 5-V Power Supply (±5% Tolerance) * Enhanced Page Mode Operation

MG100Q2YS1

Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG100Q2YS1 HI GH POWER S WIT C H I N G A P P L I C A T I O N S . Unit M O T O R C ONT R O L A P P L I C A T I O N S . in m m • High Input Impedance • High Speed : t f =0. 5fis Max. t r r = 0 . 5 (is ( M a x . ) •Low Saturación Voltage:

2sc2824

Abstract: 2SA1184
Contextual Info: TOSHIBA íDISCRETE/OPTOJ Ib DE I TDTTESD a007Etob M |~~ Y ' 9097250 T O SH IB A DISCRETE/ OP TO 56C 07266 ' D JT- 3 1 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) S 2 A 1 1 8 4 Unit in mra AUDIO FREQUENCY POWER A M P L I F I E R APPLICATION S. 7.9 MAX. ^3.1d-Ql5

2SK578

Abstract: 2SK57
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK578 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVE, DC-DC CONVERTER AND SWITCHING REGURATOR APPLICATIONS. #3,3±Q.2 FEATURES: . Low Drain-Source ON Resistance

transistor 2SK1603

Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
Contextual Info: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all

Contextual Info: TLE2024, TLE2024A, TLE2024B, TLE2024Y EXCALIBUR HIGH-SPEED LOW-POWER PRECISION QUAD OPERATIONAL AMPLIFIERS D 3 2 6 5 , M A Y 1 9 8 9 - R E V IS E D O C T O B E R 1991 available features Supply Current . . . 1 mA Max High Open-Loop Gain . . . 7 V/jiV 137 dB Typ

Contextual Info: TMS28C64 65,536-BIT ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY • Organization 8K x 8 • Single 5-V Power Supply ± 10% N AND J PACKAGES (TOP VIEW } Q 1 U A 12C 2 A7C 3 Compatible with Existing 64K M O S EPRO M s. PRO M s. R O M s, and EEPR O M s

FN521

Abstract: FN 521 UFN522 UFN523 UFN520
Contextual Info: POWER MOSFET TRANSISTORS UFN520 100 Volt, 0.3 Ohm N-Channel UFN522 UFN523 DESCRIPTION The U nitrode power M O SFET desig n u tilizes the m ost a dvan ced technology available. This efficient design a ch ieves a very low Rosiom an d a high tran scon d u ctan ce.

diode E155

Abstract: mig20j
Contextual Info: T O SH IB A TENTATIVE MIG20J906E/EA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J906E, MIG20J906EA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package.

Contextual Info: UT54 ACS 153/UT54ACTS153 Radiation-Hardened Quadruple 4 to 1 Multiplexers PINOUTS FEATURES • 16-Pin D IP Top View 1.2n radiation-hardened CMOS - Latchup immune High speed Low power consumption Single 5 volt supply Available QM L Q o r V processes Flexible package

Contextual Info: T O SH IB A TENTATIVE TC75W56FU TOSHIBA CMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TC75W56FU DUAL COMPARATOR TC75W56FU is a CMOS type general-purpose dual comparator capable of single power supply operation and using lower supply currents than the conventional bipolar