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    POLYSILICON FUSE Search Results

    POLYSILICON FUSE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCKE805NA
    Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B Datasheet
    TCKE805NL
    Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, Fixed Over Voltage Clamp, WSON10B Datasheet
    TCKE800NL
    Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Datasheet
    TCKE800NA
    Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Datasheet
    TCKE812NL
    Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, Fixed Over Voltage Clamp, WSON10B Datasheet

    POLYSILICON FUSE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    fusible resistor

    Abstract: fusible fusible fused resistor polysilicon fuse resistor AAAA fusible fuse resistor
    Contextual Info: Fusible Links  June 1995 Features Applications • Made with Polysilicon one minimum square ~ 50W • Resistor Trimming • Programming Applications • Easy and Fast Tester Programmable (~10 ms) • Device Identification / Serial Number • Typical Power Supply Required for 2 µm width:


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    Contextual Info: One Time Programming Features • Made with Polysilicon one minimum square ~ 50 Ohms • Easy and Fast Tester Programmable (~10 ms) • Typical Power Supply Required for 2 µm width: 10 volts • Proven Reliability Description Fusible links can be designed in all Mitel CMOS processes to


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    XH035 library

    Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3
    Contextual Info: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


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    XA035 XA035 35-micron XH035 XH035 library depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 analog devices transistor tutorials MOS RM3 PDF

    SG 1050

    Abstract: C06 60V polysilicon fuse
    Contextual Info: 0.6µ µm 60V CMOS Process ID: SG [C06] Applications Main Process Flow • Automotive, including 42V standard. • P Substrate • HV Well Formation • LOCOS Field Oxidation • Twin Retrograde Wells


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    MOS RM3

    Contextual Info: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


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    XO035 XO035 35-micron MOS RM3 PDF

    1 kilo ohm resistor specifications

    Abstract: RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM
    Contextual Info: Standard Features • • • • • • • • 3.3V CMOS Transistors NPN Transistors Lateral PNP Transistors Analog Resistors Mono-Silicon Capacitor Schottky Diode Poly Fusing Element Multilevel Metallization-Metal Layers 1-3 Optional Features • • •


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    AT46700 1 kilo ohm resistor specifications RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM PDF

    180NM mos

    Abstract: 180NM IBM 180NM aluminium 6351 IBM efuse 180-nm polysilicon resistor International CMOS Technology
    Contextual Info: High-quality imaging for a wide range of applications Foundry technologies 180-nm CMOS image sensor IBM Global Engineering Solutions Highlights offers a leading-edge CMOS image sensor CIMG technology based on Standard features: Optional features: IBM’s industry-standard 180-nm CMOS


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    180-nm TGD01612-USEN-07 180NM mos 180NM IBM 180NM aluminium 6351 IBM efuse polysilicon resistor International CMOS Technology PDF

    130nm CMOS

    Abstract: ibm 130nm CMOS IBM efuse cmos IMAGE SENSOR 180-nm 130nm 180NM mos 180NM linear cmos camera SENSOR
    Contextual Info: High-quality imaging for small format applications Foundry technologies 130-nm/180-nm CMOS image sensor CIMG7HY IBM Global Engineering Solutions offers Highlights a leading-edge CMOS image sensor CIMG technology based on IBM’s Standard features: Optional features:


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    130-nm/180-nm 130-nm 180-nm TGD03007-USEN-02 130nm CMOS ibm 130nm CMOS IBM efuse cmos IMAGE SENSOR 180-nm 130nm 180NM mos 180NM linear cmos camera SENSOR PDF

    ASX 12 D Germanium Transistor

    Abstract: 1394 audio subunit domino logic,dynamic logic ibm 6X86MX IBM-6x86MX Japan dvd cjc Transistor Data Book nand flash HET PR333 PR300 APPLE LM INVERTER
    Contextual Info: v ol 4 3 ume A publication of IBM Microelectronics IBM’s Blue Logic Strategy In This Issue Third Quarter 1998, Vol. 4, No.3 1 IBM’s Blue Logic Strategy 4 High-Speed Design Styles Leverage IBM Technology Prowess 8 Low-Power Methodology and Design Techniques


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    XH035

    Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3
    Contextual Info: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target


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    XH035 XH035 35-micron mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3 PDF

    Contextual Info: ST1200 256 BITS ONE TIME PROGRAMMABLE EPROM WITH LOCK OUT BRIEF DATA • ■ ■ ■ ■ ■ ■ 256 X 1 ORGANIZATION 96 BITS PROTECTED IN WRITE MODE BY LOCK-OUT FUSE 5V VCC POWER SUPPLY AND 21V VPP PROGRAMMING VOLTAGE 85 MW IN READ MODE POWER ON RESET VERY HIGH RELIABILITY LEVEL


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    ST1200 ST1200 PDF

    ST1200

    Contextual Info: ST1200 256 BITS ONE TIME PROGRAMMABLE EPROM WITH LOCK OUT BRIEF DATA • ■ ■ ■ ■ ■ ■ 256 X 1 ORGANIZATION 96 BITS PROTECTED IN WRITE MODE BY LOCK-OUT FUSE 5V VCC POWER SUPPLY AND 21V VPP PROGRAMMING VOLTAGE 85 MW IN READ MODE POWER ON RESET VERY HIGH RELIABILITY LEVEL


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    ST1200 ST1200 PDF

    74LS04

    Abstract: 74ls04 dip specification of IC 74ls04 20-PIC NOT gate 74LS04 DS1000 DS1000-IND DS1005 DS1007 DS1010
    Contextual Info: Application Note 14 Design Considerations for All-Silicon Delay Lines www.dalsemi.com SILICON DELAY LINES VS. HYBRID L-C NETWORKS Figure 1 shows internal views of a typical 5-tap hybrid delay line and its silicon counterpart. A hybrid is manufactured using a commercially available hex inverter DIP e.g., 74LS04 with a small PC board


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    74LS04) DS1007, 74LS04 74ls04 dip specification of IC 74ls04 20-PIC NOT gate 74LS04 DS1000 DS1000-IND DS1005 DS1007 DS1010 PDF

    AD8555

    Abstract: AD8555AR otp polyfuse
    Contextual Info: Zero-Drift, Single-Supply, Sensor Signal Amplifier with Digitally Programmable Gain and Offset a Preliminary Technical Data AD8555 with a resolution of better than 0.4% of the difference between VDD and VSS. A lockout trim after gain and offset adjustment


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    AD8555 AD8555AR PR04598-0-1/04 AD8555 otp polyfuse PDF

    antifuse

    Abstract: actel act1 family ANTIFUSE-based actel antifuse programming technology
    Contextual Info: Back Actel and the Antifuse Page 1 of 5 Actel and the Antifuse • • • • • • • • Introduction Antifuse vs Memory-based Programmable Logic Antifuse Technology Evaluating Antifuse Alternatives User Benefits of Actel's PLICE Technology Future Directions in Antifuse Technology


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    Contextual Info: 0.35 m Process Family: XA035 0.35 Micron High Temperature Modular CMOS Technology DESCRIPTION The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and Industrial products with temperature range up to


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    XA035 XA035 35-micron PDF

    74LS04

    Abstract: 74ls04 dip ttl cmos advantages disadvantages 74LS04 Hex Inverter definition 13 tap inductor NOT gate 74LS04 DS1000 DS1005 DS1007 specification of IC 74ls04
    Contextual Info: APPLICATION NOTE 14 Application Note 14 Design Considerations for All–Silicon Delay Lines SILICON DELAY LINES VS. HYBRID L–C NETWORKS Figure 1 shows internal views of a typical 5–tap hybrid delay line and its silicon counterpart. A hybrid is manufactured using a commercially available hex


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    74LS04) DS1013) DS1000 DS1007, 74LS04 74ls04 dip ttl cmos advantages disadvantages 74LS04 Hex Inverter definition 13 tap inductor NOT gate 74LS04 DS1005 DS1007 specification of IC 74ls04 PDF

    actel 1240a

    Abstract: TI1139 UI02 1280xl actel 1240xl 132 pga UJ-01 U1H-18 110E06 SI 1020A Actel A1225
    Contextual Info: Actel Device Reliability Report Actel’s field programmable gate arrays FPGAs are currently available in five product families—ACT 1, ACT 2, 1200XL, 3200DX, and ACT 3. The ACT 1 family consists of the A1010 and A1020, which are 1200- and 2000-gate FPGAs,


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    1200XL, 3200DX, A1010 A1020, 2000-gate A1225, A1240, A1280 1200XL A1225XL, actel 1240a TI1139 UI02 1280xl actel 1240xl 132 pga UJ-01 U1H-18 110E06 SI 1020A Actel A1225 PDF

    Contextual Info: Preliminary IIIÌMÌIII AffHSl September 1989 OPEN ASIC DATASHEET MAF GATE ARRAY SERIES 1.2 MICRON CMOS FEATURES . . . . . . HIGH LOAD DRIVE CAPABILITY EXCEEDING 35 mA • GATE COUNTS : 250 AND 800 . WIDE PACKAGE RANGE . EXCELLENT FOR FUSE PROGRAMMABLE ARRAYS AND BIPOLAR LOGIC REPLACE­


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    rpp1k1

    Contextual Info: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate


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    XT018 XT018 18-micron rpp1k1 PDF

    XP018

    Contextual Info: 0.18 m Process Family: XP018 0.18 Micron CMOS Analog Mixed-Signal Process Technology DESCRIPTION The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS High Performance Analog Mixed-Signal Technology. Based upon the industrial standard single


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    XP018 XP018 18-micron PDF

    AD8557

    Abstract: AD8557ACPZ-R2 MO-220-VGGC AD8557AR-EVAL
    Contextual Info: Digitally Programmable Sensor Signal Amplifier AD8557 auto-zero and DigiTrim technologies to create an accurate and flexible signal processing solution in a compact footprint. FEATURES Very low offset voltage: 12 V maximum over temperature Very low input offset voltage drift: 65 nV/°C maximum


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    AD8557 57ACPZ-REEL1 AD8557ACPZ-REEL71 AD8557ARZ1 AD8557ARZ-REEL1 AD8557ARZ-REEL71 AD8557AR-EVAL 16-Lead AD8557 AD8557ACPZ-R2 MO-220-VGGC AD8557AR-EVAL PDF

    AD8557

    Abstract: Digital Weighing Scale schematic AD8557ACPZ-R2 AD8557ACPZ-REEL AD8557ACPZ-REEL7 AD8557ARZ MO-220-VGGC MS-012-AA
    Contextual Info: Digitally Programmable Sensor Signal Amplifier AD8557 FEATURES APPLICATIONS Automotive sensors Pressure and position sensors Precision current sensing Thermocouple amplifiers Industrial weigh scales Strain gages FUNCTIONAL BLOCK DIAGRAM VDD VCLAMP VDD A4 VNEG


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    AD8557 D06013-0-7/10 AD8557 Digital Weighing Scale schematic AD8557ACPZ-R2 AD8557ACPZ-REEL AD8557ACPZ-REEL7 AD8557ARZ MO-220-VGGC MS-012-AA PDF

    AD8557

    Abstract: AD8557ACPZ-R2 AD8557ACPZ-REEL AD8557ACPZ-REEL7 AD8557ARZ MO-220-VGGC MS-012-AA polyfuse* ac
    Contextual Info: Digitally Programmable Sensor Signal Amplifier AD8557 FEATURES APPLICATIONS Automotive sensors Pressure and position sensors Precision current sensing Thermocouple amplifiers Industrial weigh scales Strain gages FUNCTIONAL BLOCK DIAGRAM VDD VCLAMP VDD A4 VNEG


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    AD8557 D06013-0-6/11 AD8557 AD8557ACPZ-R2 AD8557ACPZ-REEL AD8557ACPZ-REEL7 AD8557ARZ MO-220-VGGC MS-012-AA polyfuse* ac PDF