POLYSILICON FUSE Search Results
POLYSILICON FUSE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TCKE800NA | Toshiba Electronic Devices & Storage Corporation | eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B | Datasheet | ||
| TCKE800NL | Toshiba Electronic Devices & Storage Corporation | eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B | Datasheet | ||
| TCKE805NA | Toshiba Electronic Devices & Storage Corporation | eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B | Datasheet | ||
| TCKE805NL | Toshiba Electronic Devices & Storage Corporation | eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, Fixed Over Voltage Clamp, WSON10B | Datasheet | ||
| TCKE812NA | Toshiba Electronic Devices & Storage Corporation | eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B | Datasheet |
POLYSILICON FUSE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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fusible resistor
Abstract: fusible fusible fused resistor polysilicon fuse resistor AAAA fusible fuse resistor
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fusible resistorfusiblefusible fused resistorpolysilicon+3 | |
fusible
Abstract: fusible fuse resistor Links passivation resistor trimming
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50ohmsfusiblefusible fuse resistorlinks+2 | |
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Contextual Info: One Time Programming Features • Made with Polysilicon one minimum square ~ 50 Ohms • Easy and Fast Tester Programmable (~10 ms) • Typical Power Supply Required for 2 µm width: 10 volts • Proven Reliability Description Fusible links can be designed in all Mitel CMOS processes to |
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XH035 library
Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3
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xa03535-micronxh035xh035 library+8 | |
cmos transistor 0.35 um
Abstract: 0.35Um c035 ZENER C035 5V IMD2 transistor bsim3v3 polysilicon 20v zener diode 3.3v zener C035
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cmos transistor 0.35 um0.35umc035 zenerc035 5v+6 | |
SG 1050
Abstract: C06 60V polysilicon fuse
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sg 1050c06 60vpolysilicon fuse | |
MOS RM3Contextual Info: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing |
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xo03535-micronmos rm3 | |
1 kilo ohm resistor specifications
Abstract: RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM
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at467001 kilo ohm resistor specificationsresistor 10 kilo ohm100 kilo ohm resistor+7 | |
180NM mos
Abstract: 180NM IBM 180NM aluminium 6351 IBM efuse 180-nm polysilicon resistor International CMOS Technology
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180-nmtgd01612-usen-07180nm mos180nm ibm+5 | |
130nm CMOS
Abstract: ibm 130nm CMOS IBM efuse cmos IMAGE SENSOR 180-nm 130nm 180NM mos 180NM linear cmos camera SENSOR
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130-nm/180-nm130-nm180-nmtgd03007-usen-02+8 | |
180-nm
Abstract: 180NM mos CMOS/0.18-um CMOS technology
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180-nmtgd01612-usen-02180nm moscmos/0.18-um cmos technology | |
ASX 12 D Germanium Transistor
Abstract: 1394 audio subunit domino logic,dynamic logic ibm 6X86MX IBM-6x86MX Japan dvd cjc Transistor Data Book nand flash HET PR333 PR300 APPLE LM INVERTER
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asx 12 d germanium transistor1394 audio subunitdomino logic,dynamic logicibm 6x86mx+6 | |
XH035
Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3
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xh03535-micronmos rm3 datanmos transistor 0.35 um+7 | |
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Contextual Info: ST1200 256 BITS ONE TIME PROGRAMMABLE EPROM WITH LOCK OUT BRIEF DATA • ■ ■ ■ ■ ■ ■ 256 X 1 ORGANIZATION 96 BITS PROTECTED IN WRITE MODE BY LOCK-OUT FUSE 5V VCC POWER SUPPLY AND 21V VPP PROGRAMMING VOLTAGE 85 MW IN READ MODE POWER ON RESET VERY HIGH RELIABILITY LEVEL |
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st1200 | |
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T1200
Abstract: polysilicon fuse OR-SMA-R
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st1200t1200polysilicon fuseor-sma-r | |
74LS04
Abstract: 74ls04 dip specification of IC 74ls04 20-PIC NOT gate 74LS04 DS1000 DS1000-IND DS1005 DS1007 DS1010
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74ls04ds100774ls04 dipspecification of ic 74ls04+6 | |
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Contextual Info: Zero-Drift, Single-Supply, Sensor Signal Amplifier with Digitally Programmable Gain and Offset a Preliminary Technical Data AD8555 with a resolution of better than 0.4% of the difference between VDD and VSS. A lockout trim after gain and offset adjustment |
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ad855550nv/ad8555ar | |
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Contextual Info: Zero-Drift, Single-Supply, Sensor Signal Amplifier with Digitally Programmable Gain and Offset a Preliminary Technical Data AD8555 supply voltage variations. Output offset voltage can be adjusted with a resolution of better than 0.4% of the difference between |
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ad855550nv/ | |
DS-1100
Abstract: 74ls04 dip 74LS04 Hex Inverter definition 74LS04 DS-1135 74LS04 NOT gate IC data sheet 74LS04 NOT gate 74LS04 sample 74LS04 DS1000-IND
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ds1007ds1100ds1110ds1135+10 | |
AD8555
Abstract: AD8555AR otp polyfuse
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ad8555ad8555arpr04598-0-1/04otp polyfuse | |
74LS04 Hex Inverter definition
Abstract: 74ls04 dip ttl cmos advantages disadvantages 74LS04 DS-1100 Appnote14 TTL 74ls04 data DS1005 DS1100 DS1110
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ds1100ds1135ds1110com/an14+9 | |
AD8557
Abstract: lfcsp_VQ package otp polyfuse MO-220-VGGC MS-012-AA
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ad8557ad8557arad8557ar-reelad8557ar-reel7+9 | |
antifuse
Abstract: actel act1 family ANTIFUSE-based actel antifuse programming technology
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antifuseactel act1 familyantifuse-based actelantifuse programming technology | |
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Contextual Info: 0.35 m Process Family: XA035 0.35 Micron High Temperature Modular CMOS Technology DESCRIPTION The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and Industrial products with temperature range up to |
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xa03535-micron | |