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    POLYSILICON FUSE Search Results

    POLYSILICON FUSE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCKE800NA
    Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Datasheet
    TCKE805NA
    Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B Datasheet
    TCKE805NL
    Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, Fixed Over Voltage Clamp, WSON10B Datasheet
    TCKE800NL
    Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Datasheet
    TCKE812NL
    Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, Fixed Over Voltage Clamp, WSON10B Datasheet

    POLYSILICON FUSE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    fusible resistor

    Abstract: fusible fusible fused resistor polysilicon fuse resistor AAAA fusible fuse resistor
    Contextual Info: Fusible Links  June 1995 Features Applications • Made with Polysilicon one minimum square ~ 50W • Resistor Trimming • Programming Applications • Easy and Fast Tester Programmable (~10 ms) • Device Identification / Serial Number • Typical Power Supply Required for 2 µm width:


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    fusible

    Abstract: fusible fuse resistor Links passivation resistor trimming
    Contextual Info: Fusible Links  October 1995 Features Applications • • • • • • • Made with Polysilicon one minimum square ~ 50ohms Easy and Fast Tester Programmable (~10 ms) Typical Power Supply Required for 2 µm width: 10 volts Proven Reliability Resistor Trimming


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    50ohms) fusible fusible fuse resistor Links passivation resistor trimming PDF

    Contextual Info: One Time Programming Features • Made with Polysilicon one minimum square ~ 50 Ohms • Easy and Fast Tester Programmable (~10 ms) • Typical Power Supply Required for 2 µm width: 10 volts • Proven Reliability Description Fusible links can be designed in all Mitel CMOS processes to


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    XH035 library

    Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3
    Contextual Info: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


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    XA035 XA035 35-micron XH035 XH035 library depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 analog devices transistor tutorials MOS RM3 PDF

    cmos transistor 0.35 um

    Abstract: 0.35Um c035 ZENER C035 5V IMD2 transistor bsim3v3 polysilicon 20v zener diode 3.3v zener C035
    Contextual Info: 0.35µ µm 5V / 3.3V CMOS Process ID: SL [C035] Applications Main Process Flow • Interfacing high density industry- • P Substrate standard 0.35um core logic to 5V • LOCOS Field Oxidation


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    SG 1050

    Abstract: C06 60V polysilicon fuse
    Contextual Info: 0.6µ µm 60V CMOS Process ID: SG [C06] Applications Main Process Flow • Automotive, including 42V standard. • P Substrate • HV Well Formation • LOCOS Field Oxidation • Twin Retrograde Wells


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    MOS RM3

    Contextual Info: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


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    XO035 XO035 35-micron MOS RM3 PDF

    1 kilo ohm resistor specifications

    Abstract: RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM
    Contextual Info: Standard Features • • • • • • • • 3.3V CMOS Transistors NPN Transistors Lateral PNP Transistors Analog Resistors Mono-Silicon Capacitor Schottky Diode Poly Fusing Element Multilevel Metallization-Metal Layers 1-3 Optional Features • • •


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    AT46700 1 kilo ohm resistor specifications RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM PDF

    180NM mos

    Abstract: 180NM IBM 180NM aluminium 6351 IBM efuse 180-nm polysilicon resistor International CMOS Technology
    Contextual Info: High-quality imaging for a wide range of applications Foundry technologies 180-nm CMOS image sensor IBM Global Engineering Solutions Highlights offers a leading-edge CMOS image sensor CIMG technology based on Standard features: Optional features: IBM’s industry-standard 180-nm CMOS


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    180-nm TGD01612-USEN-07 180NM mos 180NM IBM 180NM aluminium 6351 IBM efuse polysilicon resistor International CMOS Technology PDF

    130nm CMOS

    Abstract: ibm 130nm CMOS IBM efuse cmos IMAGE SENSOR 180-nm 130nm 180NM mos 180NM linear cmos camera SENSOR
    Contextual Info: High-quality imaging for small format applications Foundry technologies 130-nm/180-nm CMOS image sensor CIMG7HY IBM Global Engineering Solutions offers Highlights a leading-edge CMOS image sensor CIMG technology based on IBM’s Standard features: Optional features:


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    130-nm/180-nm 130-nm 180-nm TGD03007-USEN-02 130nm CMOS ibm 130nm CMOS IBM efuse cmos IMAGE SENSOR 180-nm 130nm 180NM mos 180NM linear cmos camera SENSOR PDF

    180-nm

    Abstract: 180NM mos CMOS/0.18-um CMOS technology
    Contextual Info: High-quality imaging for a wide range of applications Foundry technologies 180-nm CMOS image sensor IBM Semiconductor solutions offers a Highlights leading-edge CMOS image sensor CIMG technology based on IBM’s Standard features: Optional features: •


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    180-nm TGD01612-USEN-02 180NM mos CMOS/0.18-um CMOS technology PDF

    ASX 12 D Germanium Transistor

    Abstract: 1394 audio subunit domino logic,dynamic logic ibm 6X86MX IBM-6x86MX Japan dvd cjc Transistor Data Book nand flash HET PR333 PR300 APPLE LM INVERTER
    Contextual Info: v ol 4 3 ume A publication of IBM Microelectronics IBM’s Blue Logic Strategy In This Issue Third Quarter 1998, Vol. 4, No.3 1 IBM’s Blue Logic Strategy 4 High-Speed Design Styles Leverage IBM Technology Prowess 8 Low-Power Methodology and Design Techniques


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    XH035

    Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3
    Contextual Info: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target


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    XH035 XH035 35-micron mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3 PDF

    Contextual Info: ST1200 256 BITS ONE TIME PROGRAMMABLE EPROM WITH LOCK OUT BRIEF DATA • ■ ■ ■ ■ ■ ■ 256 X 1 ORGANIZATION 96 BITS PROTECTED IN WRITE MODE BY LOCK-OUT FUSE 5V VCC POWER SUPPLY AND 21V VPP PROGRAMMING VOLTAGE 85 MW IN READ MODE POWER ON RESET VERY HIGH RELIABILITY LEVEL


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    ST1200 ST1200 PDF

    T1200

    Abstract: polysilicon fuse OR-SMA-R
    Contextual Info: SGS-THOMSON m ST1200 256 BITS ONE TIME PROGRAMMABLE EPROM WITH LOCK OUT BRIEF DATA 256 X 1 ORGANIZATION 96 BITS PROTECTED IN WRITE MODE BY LOCK-OUT FUSE Figure 1 Delivery forms 5V VCC POWER SUPPLY AND 21V VPP PROGRAMMING VOLTAGE 85 MW IN READ MODE POWER ON RESET


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    ST1200 ST1200 T1200 polysilicon fuse OR-SMA-R PDF

    74LS04

    Abstract: 74ls04 dip specification of IC 74ls04 20-PIC NOT gate 74LS04 DS1000 DS1000-IND DS1005 DS1007 DS1010
    Contextual Info: Application Note 14 Design Considerations for All-Silicon Delay Lines www.dalsemi.com SILICON DELAY LINES VS. HYBRID L-C NETWORKS Figure 1 shows internal views of a typical 5-tap hybrid delay line and its silicon counterpart. A hybrid is manufactured using a commercially available hex inverter DIP e.g., 74LS04 with a small PC board


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    74LS04) DS1007, 74LS04 74ls04 dip specification of IC 74ls04 20-PIC NOT gate 74LS04 DS1000 DS1000-IND DS1005 DS1007 DS1010 PDF

    Contextual Info: Zero-Drift, Single-Supply, Sensor Signal Amplifier with Digitally Programmable Gain and Offset a Preliminary Technical Data AD8555 with a resolution of better than 0.4% of the difference between VDD and VSS. A lockout trim after gain and offset adjustment


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    AD8555 50nV/Â AD8555AR PDF

    Contextual Info: Zero-Drift, Single-Supply, Sensor Signal Amplifier with Digitally Programmable Gain and Offset a Preliminary Technical Data AD8555 supply voltage variations. Output offset voltage can be adjusted with a resolution of better than 0.4% of the difference between


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    AD8555 50nV/Â PDF

    DS-1100

    Abstract: 74ls04 dip 74LS04 Hex Inverter definition 74LS04 DS-1135 74LS04 NOT gate IC data sheet 74LS04 NOT gate 74LS04 sample 74LS04 DS1000-IND
    Contextual Info: OSCILLATORS/DELAY LINES/TIMERS/COUNTERS Feb 21, 2002 App Note 14: Design Considerations for AllSilicon Delay Lines This application brief discusses the architectural and structural differences between solid-state and hybrid delay lines. In many cases, solid-state delay


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    DS1007, DS1007: DS1100: DS1110: DS1135: DS-1100 74ls04 dip 74LS04 Hex Inverter definition 74LS04 DS-1135 74LS04 NOT gate IC data sheet 74LS04 NOT gate 74LS04 sample 74LS04 DS1000-IND PDF

    AD8555

    Abstract: AD8555AR otp polyfuse
    Contextual Info: Zero-Drift, Single-Supply, Sensor Signal Amplifier with Digitally Programmable Gain and Offset a Preliminary Technical Data AD8555 with a resolution of better than 0.4% of the difference between VDD and VSS. A lockout trim after gain and offset adjustment


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    AD8555 AD8555AR PR04598-0-1/04 AD8555 otp polyfuse PDF

    74LS04 Hex Inverter definition

    Abstract: 74ls04 dip ttl cmos advantages disadvantages 74LS04 DS-1100 Appnote14 TTL 74ls04 data DS1005 DS1100 DS1110
    Contextual Info: Maxim > App Notes > Oscillators/Delay Lines/Timers/Counters Keywords: DS1100, DS1135, DS1110, delay line, hybrid delay line, digital delay line, FAQ Sep 30, 2002 APPLICATION NOTE 14 Design Considerations for All-Silicon Delay Lines Abstract: This application brief discusses the architectural and structural differences between solid-state and


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    DS1100, DS1135, DS1110, DS1100: DS1110: DS1135: com/an14 APP14, Appnote14, 74LS04 Hex Inverter definition 74ls04 dip ttl cmos advantages disadvantages 74LS04 DS-1100 Appnote14 TTL 74ls04 data DS1005 DS1100 DS1110 PDF

    AD8557

    Abstract: lfcsp_VQ package otp polyfuse MO-220-VGGC MS-012-AA
    Contextual Info: Digitally Programmable Sensor Signal Amplifier AD8557 Preliminary Technical Data FEATURES APPLICATIONS Very low offset voltage: 10 V max over temperature Very low input offset voltage drift: 50 nV/°C max High CMRR: 96 dB min Digitally programmable gain and output offset voltage


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    AD8557 AD8557AR AD8557AR-REEL AD8557AR-REEL7 AD8557AR-EVAL AD8557ACP-R2 AD8557ACP-REEL AD8557ACP-REEL7 16-Lead AD8557 lfcsp_VQ package otp polyfuse MO-220-VGGC MS-012-AA PDF

    antifuse

    Abstract: actel act1 family ANTIFUSE-based actel antifuse programming technology
    Contextual Info: Back Actel and the Antifuse Page 1 of 5 Actel and the Antifuse • • • • • • • • Introduction Antifuse vs Memory-based Programmable Logic Antifuse Technology Evaluating Antifuse Alternatives User Benefits of Actel's PLICE Technology Future Directions in Antifuse Technology


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    Contextual Info: 0.35 m Process Family: XA035 0.35 Micron High Temperature Modular CMOS Technology DESCRIPTION The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and Industrial products with temperature range up to


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    XA035 XA035 35-micron PDF