POLYSILICON FUSE Search Results
POLYSILICON FUSE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TCKE805NA |
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eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B | Datasheet | ||
| TCKE805NL |
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eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, Fixed Over Voltage Clamp, WSON10B | Datasheet | ||
| TCKE800NL |
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eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B | Datasheet | ||
| TCKE800NA |
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eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B | Datasheet | ||
| TCKE812NL |
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eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, Fixed Over Voltage Clamp, WSON10B | Datasheet |
POLYSILICON FUSE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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fusible resistor
Abstract: fusible fusible fused resistor polysilicon fuse resistor AAAA fusible fuse resistor
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Contextual Info: One Time Programming Features • Made with Polysilicon one minimum square ~ 50 Ohms • Easy and Fast Tester Programmable (~10 ms) • Typical Power Supply Required for 2 µm width: 10 volts • Proven Reliability Description Fusible links can be designed in all Mitel CMOS processes to |
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XH035 library
Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3
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XA035 XA035 35-micron XH035 XH035 library depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 analog devices transistor tutorials MOS RM3 | |
SG 1050
Abstract: C06 60V polysilicon fuse
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MOS RM3Contextual Info: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing |
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XO035 XO035 35-micron MOS RM3 | |
1 kilo ohm resistor specifications
Abstract: RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM
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AT46700 1 kilo ohm resistor specifications RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM | |
180NM mos
Abstract: 180NM IBM 180NM aluminium 6351 IBM efuse 180-nm polysilicon resistor International CMOS Technology
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180-nm TGD01612-USEN-07 180NM mos 180NM IBM 180NM aluminium 6351 IBM efuse polysilicon resistor International CMOS Technology | |
130nm CMOS
Abstract: ibm 130nm CMOS IBM efuse cmos IMAGE SENSOR 180-nm 130nm 180NM mos 180NM linear cmos camera SENSOR
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130-nm/180-nm 130-nm 180-nm TGD03007-USEN-02 130nm CMOS ibm 130nm CMOS IBM efuse cmos IMAGE SENSOR 180-nm 130nm 180NM mos 180NM linear cmos camera SENSOR | |
ASX 12 D Germanium Transistor
Abstract: 1394 audio subunit domino logic,dynamic logic ibm 6X86MX IBM-6x86MX Japan dvd cjc Transistor Data Book nand flash HET PR333 PR300 APPLE LM INVERTER
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XH035
Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3
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XH035 XH035 35-micron mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3 | |
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Contextual Info: ST1200 256 BITS ONE TIME PROGRAMMABLE EPROM WITH LOCK OUT BRIEF DATA • ■ ■ ■ ■ ■ ■ 256 X 1 ORGANIZATION 96 BITS PROTECTED IN WRITE MODE BY LOCK-OUT FUSE 5V VCC POWER SUPPLY AND 21V VPP PROGRAMMING VOLTAGE 85 MW IN READ MODE POWER ON RESET VERY HIGH RELIABILITY LEVEL |
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ST1200 ST1200 | |
ST1200Contextual Info: ST1200 256 BITS ONE TIME PROGRAMMABLE EPROM WITH LOCK OUT BRIEF DATA • ■ ■ ■ ■ ■ ■ 256 X 1 ORGANIZATION 96 BITS PROTECTED IN WRITE MODE BY LOCK-OUT FUSE 5V VCC POWER SUPPLY AND 21V VPP PROGRAMMING VOLTAGE 85 MW IN READ MODE POWER ON RESET VERY HIGH RELIABILITY LEVEL |
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ST1200 ST1200 | |
74LS04
Abstract: 74ls04 dip specification of IC 74ls04 20-PIC NOT gate 74LS04 DS1000 DS1000-IND DS1005 DS1007 DS1010
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74LS04) DS1007, 74LS04 74ls04 dip specification of IC 74ls04 20-PIC NOT gate 74LS04 DS1000 DS1000-IND DS1005 DS1007 DS1010 | |
AD8555
Abstract: AD8555AR otp polyfuse
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AD8555 AD8555AR PR04598-0-1/04 AD8555 otp polyfuse | |
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antifuse
Abstract: actel act1 family ANTIFUSE-based actel antifuse programming technology
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Contextual Info: 0.35 m Process Family: XA035 0.35 Micron High Temperature Modular CMOS Technology DESCRIPTION The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and Industrial products with temperature range up to |
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XA035 XA035 35-micron | |
74LS04
Abstract: 74ls04 dip ttl cmos advantages disadvantages 74LS04 Hex Inverter definition 13 tap inductor NOT gate 74LS04 DS1000 DS1005 DS1007 specification of IC 74ls04
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74LS04) DS1013) DS1000 DS1007, 74LS04 74ls04 dip ttl cmos advantages disadvantages 74LS04 Hex Inverter definition 13 tap inductor NOT gate 74LS04 DS1005 DS1007 specification of IC 74ls04 | |
actel 1240a
Abstract: TI1139 UI02 1280xl actel 1240xl 132 pga UJ-01 U1H-18 110E06 SI 1020A Actel A1225
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1200XL, 3200DX, A1010 A1020, 2000-gate A1225, A1240, A1280 1200XL A1225XL, actel 1240a TI1139 UI02 1280xl actel 1240xl 132 pga UJ-01 U1H-18 110E06 SI 1020A Actel A1225 | |
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Contextual Info: Preliminary IIIÌMÌIII AffHSl September 1989 OPEN ASIC DATASHEET MAF GATE ARRAY SERIES 1.2 MICRON CMOS FEATURES . . . . . . HIGH LOAD DRIVE CAPABILITY EXCEEDING 35 mA • GATE COUNTS : 250 AND 800 . WIDE PACKAGE RANGE . EXCELLENT FOR FUSE PROGRAMMABLE ARRAYS AND BIPOLAR LOGIC REPLACE |
OCR Scan |
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rpp1k1Contextual Info: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate |
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XT018 XT018 18-micron rpp1k1 | |
XP018Contextual Info: 0.18 m Process Family: XP018 0.18 Micron CMOS Analog Mixed-Signal Process Technology DESCRIPTION The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS High Performance Analog Mixed-Signal Technology. Based upon the industrial standard single |
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XP018 XP018 18-micron | |
AD8557
Abstract: AD8557ACPZ-R2 MO-220-VGGC AD8557AR-EVAL
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AD8557 57ACPZ-REEL1 AD8557ACPZ-REEL71 AD8557ARZ1 AD8557ARZ-REEL1 AD8557ARZ-REEL71 AD8557AR-EVAL 16-Lead AD8557 AD8557ACPZ-R2 MO-220-VGGC AD8557AR-EVAL | |
AD8557
Abstract: Digital Weighing Scale schematic AD8557ACPZ-R2 AD8557ACPZ-REEL AD8557ACPZ-REEL7 AD8557ARZ MO-220-VGGC MS-012-AA
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AD8557 D06013-0-7/10 AD8557 Digital Weighing Scale schematic AD8557ACPZ-R2 AD8557ACPZ-REEL AD8557ACPZ-REEL7 AD8557ARZ MO-220-VGGC MS-012-AA | |
AD8557
Abstract: AD8557ACPZ-R2 AD8557ACPZ-REEL AD8557ACPZ-REEL7 AD8557ARZ MO-220-VGGC MS-012-AA polyfuse* ac
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AD8557 D06013-0-6/11 AD8557 AD8557ACPZ-R2 AD8557ACPZ-REEL AD8557ACPZ-REEL7 AD8557ARZ MO-220-VGGC MS-012-AA polyfuse* ac | |