PO 3000 Search Results

SN139

Abstract: 1S1718
Contextual Info: 4 2 3 1 RELEASED FOR WISLISATIJN- THIS DBAUIU9 15 U W M .IM D. COPYRIGHT 13 BY «IP INCORPORATED □ 1ST ALL SIWTS SMESUM. CF R EV IS IO N S p PO SN 12- - PO SN tot!— MJdAIW* 39 REV PER 2-3-38 0 0 2 0 - 0 1 7 5 -9 0 ora «m DICE FM 1 PO S N 13 P O SN

Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SD2387 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2387 PO W ER AM PLIFIER APPLICATIONS U nit in mm .2 + 0.2 15.9MAX. • High Breakdown Voltage : V^EO = 140V (Min.) • Complementary to 2SB1558 ^o 1 , /

2601NH

Abstract: T 7224 Diode 78 DIOD
Contextual Info: Datenblatt / Data sheet SH Puls Po wer Diod e Pulse Po wer Diode D 2601NH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages

78 DIOD

Abstract: p j 85 diod
Contextual Info: Datenblatt / Data sheet SH Puls Po wer Diod e Pulse Po wer Diode D 2601NH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages

2-21F1A

Abstract: 2SB1555 2SD2384
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SD2384 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2384 PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = 140V (Min.) Complementary to 2SB1555 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

2-21F1A

Abstract: 2SB1556 2SD2385
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SD2385 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2385 PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = 140V (Min.) Complementary to 2SB1556 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

2SB1558

Abstract: 2SD2387
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SD2387 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2387 Unit in mm PO W ER AM PLIFIER APPLICATIONS ' V, 1 5.9 M A X _ • • High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 03.2 ±0.2

2SB1557

Abstract: 2SD2386
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SD2386 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2386 Unit in mm PO W ER AM PLIFIER APPLICATIONS ' V, 1 5.9 M A X _ • • High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1557 03.2 ±0.2

A1297

Abstract: 2SA1297 2SC3267 A-1297
Contextual Info: TOSHIBA 2SA1297 2 S A 1 297 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : V qE (sat)= —0-5V (Max.) @Iq = —2A Complementary to 2SC3267.

2-21F1A

Abstract: 2SB1594 2SD2449
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SD2449 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2449 Unit in mm PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : VcEO = 160 V (Min.) Complementary to 2SB1594 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SD2386 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2386 PO W ER AM PLIFIER APPLICATIONS Unit in mm .2 + 0.2 15.9MAX. • High Breakdown Voltage : V^EO = 140V (Min.) • Complementary to 2SB1557 ^o 1 , / J- f / i k A 5

tr5v

Abstract: 2-21F1A 2SB1555 2SD2384
Contextual Info: TOSHIBA 2SB1555 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 2 S B 1 555 O PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2384 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

sat 1205

Abstract: 100w stereo class b amplifier with tone controls 100w car amplifier car woofer amplifier circuit diagram 15W stereo amplifiers with tone controls circuits 100w audio amplifier circuit diagram class D HZIP11 10w stereo class d amplifier with tone controls bass treble control circuit for woofer 100 100w stereo amplifier
Contextual Info: UTC 1205 LINEAR INTEGRATED CIRCUIT 20W BRIDGE AMPLIFIER FOR CAR RADIO DESCRIPTION The UTC 1205 is class B dual audio power amplifier, have designed for car radio application. HZIP-11 FEATURES * High output power: Po=10+10W@RL=2Ω, d=10% Po=20W@RL=4Ω, d=1%

Contextual Info: TO SH IB A TPD7000F TOSHIBA INTELLIGENT PO W ER DEVICE SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TPD7000F 4-CHANNEL LOW-SIDE PO W ER MOS FET DRIVER TPD7000F is a power MOS FET driver for low-side switching. This 4-channel driver with a built-in circuit is

Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SB1555 SILICON PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 2 S B 1 555 O PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V q e O = —140V (Min.) Complementary to 2SD2384 M A X IM U M RATINGS (Ta = 25°C)

2SB1557

Abstract: 2SD2386
Contextual Info: TO SH IBA 2SD2386 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2386 Unit in mm PO W E R A M PLIFIER APPLICATIONS 03.2 ± 0.2 1 5.9 MAX. • • High Breakdown Voltage : V q e O = 140 V (Min.) Complementary to 2SB1557

2-5K1A toshiba

Contextual Info: SILICON NPN EPITAXIAL TYPE RN5001 U nit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. 1.6 MAX0-4±0.05 PO W ER SW ITCHIN G APPLICATIONS. • W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process

S-AU80

Abstract: TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic
Contextual Info: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors

S-AV17

Abstract: 2SC2879 2SK3075 s-av6 quality FM TRANSMITTER 2SK1310 TOSHIBA RF Power Module S-AV17 S-AU80 2SK2854 2SK3079
Contextual Info: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors

Contextual Info: TOSHIBA TLP2530,TLP2531 TOSHIBA PHOTOCOUPLER G a A M s IRED & PHOTO IC TLP2530, TLP2531 DEGITAL LOGIC ISOLATION U n it in mm LINE RECEIVER PO W ER SUPPLY CONTROL SWITCHING PO W ER SUPPLY 8 7 6 5 5L_E_5L_E.- The T O SH IB A TLP2530 and TLP2531 dual photocouplers consist of a

to92c

Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 High Voltage Transistors Typ e M axim um Ratings N=NPN P=PNP BF420 BF421 BF422 BF423 BFP22 BFP23 BFP25 BFP26 N P N P N P N P V CEO V 'c m.\ Pt mW 300 300 250 250 200 200 300 300 50

Contextual Info: T O S H IB A MP4207 TOSHIBA PO W ER MOS FET MODULE SILICON N & P CHANNEL MOS TYPE L2-7r-MOSlV 4 IN 1 MP4207 INDUSTRIAL APPLICATIONS Unit in mm O HIGH PO W ER HIGH SPEED SWITCHING APPLICATIONS. O H-SW ITCH DRIVER • 4-Volt Gate Drive. • Small Package by Full Molding. (SIP 10 Pin)

Contextual Info: SILICON NPN EPITAXIAL TYPE RN5002 U nit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. i f 6 MAX- PO W ER SW IT C H IN G APPLICATIONS. 0 .4 ± 0 .05 1.7 MAX. W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process

Contextual Info: Ad vanced Thermal Prot ect i on f or Hig h Po wer LEDs wi t h 60V LED Dr i ver I C I LD6150 Appl icat io n Not e AN - EVAL- I LD6150 Revision: 2.1 Date: 22 July 2014 Po wer Manag em ent and Mult im ar k et Edition 2014-07-22 Published by Infineon Technologies AG