PNZ120S Search Results

LN62S

Abstract: PN120S PNZ120S
Contextual Info: Phototransistors PNZ120S PN120S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an optical controller Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Wide directional sensitivity for easy use

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ120S (PN120S) Silicon planar type Unit: mm For optical control systems 3.75±0.3 • Features 12.5 min. • High sensitivity • Wide directivity characteristics for easy use

Contextual Info: Phototransistors PNZ120S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 4.1±0.3 2.0±0.2 For optical control systems Features 12.5 min. High sensitivity Wide directional sensitivity for easy use Fast response : tr, tf = 3 µs typ. ø0.3±0.05 ø0.45±0.05

PN120S

Abstract: PNZ120S
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ120S (PN120S) Silicon planar type For optical control systems • Features  High sensitivity  Wide directivity characteristics for easy use  Fast response: tr , tf = 3 s (typ.)

Contextual Info: Phototransistors PNZ120S PN120S Silicon planar type Unit: mm For optical control systems 3.75±0.3 • Features 12.5 min. • High sensitivity • Wide directivity characteristics for easy use • Fast response: tr , tf = 3 µs (typ.) • Signal mixing capability using base pin

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ120S (PN120S) Silicon planar type Unit: mm For optical control systems 4.1±0.3 • Features 12.5 min. • High sensitivity • Wide directivity characteristics for easy use

Contextual Info: Phototransistors PNZ120S PN120S Silicon planar type Unit: mm For optical control systems 4.1±0.3 • Features 12.5 min. • High sensitivity • Wide directivity characteristics for easy use • Fast response: tr , tf = 3 µs (typ.) • Signal mixing capability using base pin

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

PNZ335

Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Contextual Info: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)

MIL-STD-19500H

Abstract: PN120S-RL
Contextual Info: Sheet No. 1/5 30fi8!fô/PRODUCT SPECIFICATION OB DESIGNED BY TYPE NUMBER : P N 1 2 0 S n-/\‘Ä-qDn ^ / G L O B A L NUMBER : P N Z 1 CHECKED BY CHECKED BY APPROVED BY 2 0 S 0 □ *1 7 * h h "7 > V &# J / T y p e $ /Photo Transistor Eifè/Appl ¡cation Optical Fiber Communication Systems