PNP VCEO 500V Search Results

Contextual Info: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)

pnp 500v

Abstract: FZT560 DSA003710
Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt C E C PARTMARKING DETAIL – FZT560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

2N3055

Abstract: 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955
Contextual Info: General Transistor Corporation CASE lc M A X V ceo (SUS) TO-3 = 2-50A = 35-500V NPN Power Transistors PNP VCEO M 1C (max) (A) hFE@ic/Vc* (min-m« @ A/V) VCE(SAT) @IC/IB (V @ A/A) V8E @IC/VCE (V @ A/V) 40 55 40 55 6 6 6 6 15-45 @ 1.5/4 15-45 @ 1.5/4 25-75 @1.5/4

Contextual Info: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10

pnp 900v

Abstract: SRSP5014 L3045 2N5415 2N1480 2N1481 2N1482 2N2911 2N5784 2N5786
Contextual Info: Silicon power transistors NPN TO-5 = 1.0 to 3.5A fT = 1.0 to 40 MHz V ce o is u s = 4 0 to 9 0 0 V I if e Type# PNP Comple­ VcEO SUS) ment (Volts) @ Ic/VcE (Min-Max @ A /V ) VcE(SAT) @ Ic / I b (V @ A/A) Vbe @ Ic/VcE (V @ A/V) Pd @ ( lie Cob fr Te = 25°C

pnp 500v

Contextual Info: High Voltage Transistors PNP High Voltage Transistors 300 to 500 Volts The Zetex range of 300V to 500V transistors provide optimized high performance PNP specifications in a variety of through hole and surface mount packages. Providing very efficient high voltage operation, these devices are ideally suited to line

pnp 500v

Abstract: Silicon PNP Epitaxial Planar Transistor high gain low voltage PNP transistor TO-92 high voltage transistor
Contextual Info: TSA894 PNP Silicon Planar High Voltage Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Base 3. Collector BVCBO -500V BVCEO -500V IC -150mA VCE SAT Features ● ● Ordering Information Low Saturation Voltages Excellent gain characteristics specified up to -50mA

pnp 500v

Abstract: TSA874 marking code B2 PNP transistor 263 sot-223 code marking marking code B08 sot223 marking code
Contextual Info: TSA874 PNP Silicon Planar High Voltage Transistor SOT-223 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO -500V BVCEO -500V IC -150mA VCE SAT Features ● ● Ordering Information Low Saturation Voltages Excellent gain characteristics specified up to -50mA

pnp 500v

Abstract: A8 diode sot-23 marking code B2 PNP Epitaxial Silicon Transistor sot-23 SOT-23 marking a8 tsa884 hFE is transistor TSA88
Contextual Info: TSA884 PNP Silicon Planar High Voltage Transistor SOT-23 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Base 3. Collector BVCBO -500V BVCEO -500V IC -150mA VCE SAT Features ● ● Ordering Information Low Saturation Voltages Excellent gain characteristics specified up to -50mA

TRANSISTOR 0835

Abstract: transistor F12 TSA874 transistor sot 223
Contextual Info: TSA874 PNP Silicon Planar High Voltage Transistor SOT-223 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -500V BVCEO -500V IC -150mA VCE SAT Ordering Information Features ● ● -0.5V @ IC / IB = -50mA / -10mA Low Saturation Voltages

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

Flyback Transformers SANYO TV

Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams
Contextual Info: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)

SLA6023 application

Abstract: SLA6024 SLA5065 SLA5064 SLA5060 application SLA5073 SLA6026 SLA5013 SLA5031 pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: Bulletin No T07 EB0 Mar.,2001 CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the

inverter in 12v DC to 220v AC 400w circuit diagrams

Abstract: step down chopper tv tube charger circuit diagrams 220v 300w ac regulator circuit 2SC5707 equivalent RD2004 2sc6096 ech8 pattern 2sc5707 Flyback Transformers SANYO TV
Contextual Info: Discrete Devices 2009-5 SANYO Discrete Devices SANYO's environmentally-considered discrete ECoP contributes to the realization of comfortable life in various aspects. Discrete devices and ExPDs power device are environmentally-considered products that well address the needs (small size, low profile, high efficiency & high reliability)

nte175

Abstract: NTE38
Contextual Info: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high– speed switching and linear amplifier applications for high–voltage operational amplifiers, switching

TT2140

Abstract: transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140
Contextual Info: Ordering number: EP106A Discrete Devices for Video Equipment '04-08 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage

RD2004

Abstract: 2SK4087 2SK4097 2sk4086 2SC5707 2sk4096 SBX201C 2SC5706 2sk3615 half-bridge power supply
Contextual Info: ディスクリートデバイス 2009-4 三洋ディスクリートデバイス 環境に配慮した三洋ディスクリートデバイス ECoP R ディスクリートデバイスExPD パワーデバイス）は、 様々な分野の機器の小型化・薄型化・高効率化・高信頼性化に

ZTX653 equivalent

Abstract: ZTX753 equivalent fzt651 ZDT1049 ztx1056A ztx651 equivalent equivalent FZT651 zldo 17 50 1N4148 SOD323 DIODE S4 58A
Contextual Info: SELECTION GUIDE Discrete semiconductors Bipolar transistors | Diodes | MOSFETs Discrete semiconductors Bipolar transistors Zetex Semiconductors provides product designers with a broad range of discrete semiconductor components renowned for their quality, high performance and optimized

EM 1455 A

Abstract: TL 2N2222A npn transistor 2N2222A 2N2907A HCT700
Contextual Info: SEME HCT700 LAB MECHANICAL DATA Dimensions in mm inches COMPLEMENTARY SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS LCC2 – Ceramic Surface Mount Package FEATURES 2 3 1 4 A 6 0.23 rad. (0.009)

Contextual Info: Power Transistors 2SC3403 2SC3403 Silicon PNP Triple-Diffused Planar Type i Package Dimensions High Breakdown Voltage, High Speed Switching Unit ‘ J • Features • High speed switching ' • Low collector-emitter saturation voltage V ce <sat • “N Type” package configuration with a cooling fin for direct soldering

2SC3870

Abstract: pnp 500v
Contextual Info: Power Transistors 2SC3870 2SC3870 Silicon PNP Triple-Diffused Planar Type P ackage Dimensions High Breakdown Voltage, High Speed Switching U nit : mm • Features • • • • High speed switching , High collector-base voltage V c b o Wide area of safety operation (ASO)

d2494

Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in

Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1 - NOVEMBER 1998 FEATURES * 500 V o lt VCE0 * 150m A c o n tin u o u s c u rre n t * Ptot = 2 W a tt PARTM ARKING D E T A IL - X <VC FZT560 ABSOLUTE M AXIM UM RATINGS. PARAMETER VALUE UNIT VcBO

LCC-20

Abstract: 2N2907A 4 pin ic
Contextual Info: 2N2907AQ–LCC20 MECHANICAL DATA Dimensions in mm inches SURFACE MOUNT QUAD PNP TRANSISTOR 5 .0 8 (.2 0 0 ) 1 .2 7 (.0 5 0 ) R E F 1 .2 7 (.0 5 0 ) R E F 5 .0 8 (.2 0 0 ) FEATURES P IN 1 IN D E X 1 1 .9 1 (.0 7 5 ) • FOUR INDEPENDENT TRANSISTORS IN A 0.35 INCH SQUARE CERAMIC PACKAGE