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    PNP RF TRANSISTOR Search Results

    PNP RF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    2SA1943
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Datasheet
    TTA012
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TTA004B
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Datasheet

    PNP RF TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CM4957

    Abstract: CM5160 CM5583 CM5943
    Contextual Info: Small Signal RF Transistors TO-39 & TO-72 Cases TO-39 TYPE NO. DESCRIPTION VCBO VCEO VEBO ICBO @ µA V) (V) (V) (µ *VCER VCB (V) *ICEO *ICES *ICEV *ICER MIN MIN MIN CM4957 PNP RF AMPL/SWITCH 30 30 3.0 0.1 CM5160 PNP RF AMPL/SWITCH 60 40 4.0 CM5583 PNP RF AMPL/SWITCH


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    CM4957 CM5160 CM5583 CM5943 PDF

    MARKING CODE 16 transistor sot23

    Abstract: RF TRANSISTOR ic 556 datasheet pdf for ic 556 CMPTH81
    Contextual Info: Central CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D


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    CMPTH81 OT-23 100MHz 20-February MARKING CODE 16 transistor sot23 RF TRANSISTOR ic 556 datasheet pdf for ic 556 CMPTH81 PDF

    MARKING CODE 16 transistor sot23

    Abstract: CMPTH81 MARKING 16 transistor sot23 RF POWER TRANSISTOR 100MHz
    Contextual Info: Central CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications. Marking Code: C3D.


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    CMPTH81 OT-23 100MHz 16-October MARKING CODE 16 transistor sot23 CMPTH81 MARKING 16 transistor sot23 RF POWER TRANSISTOR 100MHz PDF

    Contextual Info: Central“ CMPTH81 Semiconductor Corp. SURFACE MOUNT PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy mold­ ed in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D


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    CMPTH81 1001OV, 100MHz 20-February OT-23 OT-23 PDF

    Contextual Info: Central" CMPTH81 Semiconductor Corp. SURFACE MOUNT PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy mold­ ed in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D


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    CMPTH81 OT-23 20-February OT-23 PDF

    Contextual Info: CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications.


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    CMPTH81 CMPTH81 OT-23 100MHz 15-August PDF

    RF TRANSISTOR

    Abstract: ic 556 datasheet CMPTH81 MARKING CODE 16 transistor sot23 sot 23 marking code R4 sot23 marking code 16
    Contextual Info: CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications.


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    CMPTH81 CMPTH81 OT-23 oth25 100MHz RF TRANSISTOR ic 556 datasheet MARKING CODE 16 transistor sot23 sot 23 marking code R4 sot23 marking code 16 PDF

    transistor LT 028

    Abstract: LT 74 s
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line lc = - 400 mA RF POWER TRANSISTOR PNP SILICON PNP SILICON RF POWER TRANSISTOR . . . d esigned for am plifier, frequency m ultiplier or o scillator a p p li­ cations in m ilitary and industrial equipm ent. Suitable for use as


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    O-205AD transistor LT 028 LT 74 s PDF

    AFY11

    Abstract: germanium mesa transistor pnp Germanium Transistor Germanium mesa
    Contextual Info: AFY11 Not for new developm ent PNP Mesa transistor for RF-application The AFY11 is a germanium PNP-RF mesa transistor in a case 5 C 3 DIN 41 873 TO-39 . The collector is electrically connected to the case. AFY11 is designed for universal RF-applications up to about 300 MHz.


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    AFY11 AFY11 Q60106 100MHz; germanium mesa transistor pnp Germanium Transistor Germanium mesa PDF

    marking FR PNP SOT323

    Abstract: BF824W
    Contextual Info: Philips Semiconductors Product specification PNP RF transistor BF824W FEATURES • S-mini package. H= FI 1 c APPLICATIONS It is especially Intended for RF stages in FM front-ends in common base configuration. Ü» Top view DESCRIPTION PNP transistor in a plastic SOT323


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    OT323 BF824W BF824W UAU037 OT323) marking FR PNP SOT323 PDF

    TRANSISTOR SMD

    Contextual Info: NTE2401 Silicon PNP Transistor RF Stages in FM Front Ends Description: The NTE2401 is a silicon PNP transistor in a plastic SOT–23 type surface mount package designed for use in RF stages in FM front–ends in common base configuration for SMD applications.


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    NTE2401 NTE2401 100MHz TRANSISTOR SMD PDF

    2N3553 equivalent

    Abstract: vk-200 ferrite choke vk200* FERROXCUBE 2N3553 VK-200 VK200 MM4019 ATC200
    Contextual Info: MM4019 silicon PNP SILICON RF POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR . . . designed for use as complement to NPN 2N 3553 in VH F and UHF amplifier applications for military and industrial equipment. • Power Output - Pout = 2.0 W (Typ) @ Pjn = 0.5 W, f = 400 MHz


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    MM4019 2N3553 MM4019/2N3553 ATC-200 2N3553 equivalent vk-200 ferrite choke vk200* FERROXCUBE VK-200 VK200 MM4019 ATC200 PDF

    BFR93 application note

    Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF


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    BFT93 R77/02/pp10 BFR93 application note PDF

    BFT93

    Abstract: BFR93 application note bfr93 MSB003 BFR93A
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF


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    BFT93 R77/02/pp10 BFT93 BFR93 application note bfr93 MSB003 BFR93A PDF

    W1p TRANSISTOR

    Abstract: BFT92 transistor w1P w1p npn SOT23 W1P BFR92 application note SOT23 W1P NXP w1p 60 transistor Bft92 W1p 48 TRANSISTOR
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT92 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF


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    BFT92 R77/02/pp10 W1p TRANSISTOR BFT92 transistor w1P w1p npn SOT23 W1P BFR92 application note SOT23 W1P NXP w1p 60 transistor Bft92 W1p 48 TRANSISTOR PDF

    MM4018

    Contextual Info: MM4018 SILICON PNP SILICON RF POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier or oscillator appli­ cations in m ilitary and industrial equipm ent. Suitable fo r use as Class A , 6 , or C driver, or pre-driver stages in V H F applications.


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    MM4018 MM4018 PDF

    2N5160

    Contextual Info: me. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 2N5160 The RF Line PNP SILICON AMPLIFIER TRANSISTOR PNP SILICON RF POWER TRANSISTORS . . . designed for amplifier, frequency multiplier or oscillator applications in military and industrial equipment, Suitable for use as Class A,


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    2N5160 2N3866 400-MHz -30nH. -10pF 2N5160 PDF

    transistor BF 257

    Abstract: bf414 transistor BF 414 tfk 513 BF 414 transistor BF 258 414 transistor AI-257 db258 Kleine
    Contextual Info: Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Features: • Kleine R ückwirkungskapazität


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    VHF power TRANSISTOR PNP TO-39

    Abstract: LN 7904 i31n mm4018
    Contextual Info: I MOTOROLA SC XSTRS/R MbE D F h3b?2S4 G Q tm 2 3 t i MOTOROLA r SEMICONDUCTOR TECHNICAL DATA - 3 ^ HOTb n MM4018 T h e R F L in e \q 9 = - 4 0 0 mA RF POWER TRANSISTOR PNP SILICON PNP SILICON RF POWER TRANSISTOR . . designed for amplifier, frequency multiplier or oscillator appli­


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    MM4018 VHF power TRANSISTOR PNP TO-39 LN 7904 i31n mm4018 PDF

    2N5160 equivalent

    Abstract: 2n5160 CM5160 TRANSISTOR REPLACEMENT high frequency silicon transistor TO-39 CASE
    Contextual Info: Central CM5160 TM Semiconductor Corp. PNP HIGH FREQUENCY SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CM5160 is a silicon PNP RF transistor, mounted in a hermetically sealed package, designed for high frequency amplifier and non-saturated switching


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    CM5160 CM5160 2N5160. 200MHz 18-November 2N5160 equivalent 2n5160 TRANSISTOR REPLACEMENT high frequency silicon transistor TO-39 CASE PDF

    Contextual Info: VfSMAY _ BF569/BF569R ▼ Vishay Telefunken Silicon PNP Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications For selfoscillating RF m ixer stages. Features • High gain •


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    BF569/BF569R BF569 BF569R D-74025 20-Jan-99 PDF

    MRF5160

    Abstract: F5160 MRF*5160
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5160 The RF Line PNP Silicon High Frequency Transistor lc = -400 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR PNP SILICON . . . designed for am plifier, oscillator or frequency m ultiplier applications in industrial


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    F5160 MRF3866 MRF5160 MRF5160 F5160 MRF*5160 PDF

    transistor BF 509

    Abstract: transistor BF 298 bf509 TRANSISTOR bf 297 EE50 to 92 z Kleine
    Contextual Info: BF 509 Silizium-PNP-HF-Transistor Silicon PNP RF Transistor Anwendungen: Regelbare VHF-Eingangsstufen Applications: Gain controlled VHF input stages Besondere Merkmale: • Hohe Leistungsverstärkung Features: • High p o w e r gain • Kleine Rauschzahlen


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    BF479

    Abstract: Transistor BF 479 Mischstufen Transistor BF 479 t pnp rf transistor rcbo S55A TRANSISTOR BF479 CJCO
    Contextual Info: Silizium-PNP-HF-Transistor Silicon PNP RF Transistor Anwendungen: UHF/VHF-Hochstrom -Eingangs- und M ischslufen Applications: UHF/VHF-high current input and m ixer stages Besondere Merkmale: Features: • Hohe Kreuzm odulationsfestigkeit • • Hohe Verstärkung


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