PNP RF TRANSISTOR Search Results

PNP RF TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TTA004B	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N	Datasheet
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini	Datasheet
2SA1943	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L)	Datasheet

PNP RF TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications.	Original	CMPTH81 CMPTH81 OT-23 100MHz 15-August	PDF
RF TRANSISTOR Abstract: ic 556 datasheet CMPTH81 MARKING CODE 16 transistor sot23 sot 23 marking code R4 sot23 marking code 16 Contextual Info: CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications.	Original	CMPTH81 CMPTH81 OT-23 oth25 100MHz RF TRANSISTOR ic 556 datasheet MARKING CODE 16 transistor sot23 sot 23 marking code R4 sot23 marking code 16	PDF
2N3553 equivalent Abstract: vk-200 ferrite choke vk200* FERROXCUBE 2N3553 VK-200 VK200 MM4019 ATC200 Contextual Info: MM4019 silicon PNP SILICON RF POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR . . . designed for use as complement to NPN 2N 3553 in VH F and UHF amplifier applications for military and industrial equipment. • Power Output - Pout = 2.0 W (Typ) @ Pjn = 0.5 W, f = 400 MHz	OCR Scan	MM4019 2N3553 MM4019/2N3553 ATC-200 2N3553 equivalent vk-200 ferrite choke vk200* FERROXCUBE VK-200 VK200 MM4019 ATC200	PDF
SOT23 W1P NXP Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT92 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF	Original	BFT92 MSB003act R77/02/pp10 SOT23 W1P NXP	PDF
MM4018 Contextual Info: MM4018 SILICON PNP SILICON RF POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier or oscillator appli cations in m ilitary and industrial equipm ent. Suitable fo r use as Class A , 6 , or C driver, or pre-driver stages in V H F applications.	OCR Scan	MM4018 MM4018	PDF
2N5160 Contextual Info: me. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 2N5160 The RF Line PNP SILICON AMPLIFIER TRANSISTOR PNP SILICON RF POWER TRANSISTORS . . . designed for amplifier, frequency multiplier or oscillator applications in military and industrial equipment, Suitable for use as Class A,	Original	2N5160 2N3866 400-MHz -30nH. -10pF 2N5160	PDF
transistor BF 257 Abstract: bf414 transistor BF 414 tfk 513 BF 414 transistor BF 258 414 transistor AI-257 db258 Kleine Contextual Info: Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Features: • Kleine R ückwirkungskapazität	OCR Scan		PDF
2N5160 equivalent Abstract: 2n5160 CM5160 TRANSISTOR REPLACEMENT high frequency silicon transistor TO-39 CASE Contextual Info: Central CM5160 TM Semiconductor Corp. PNP HIGH FREQUENCY SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CM5160 is a silicon PNP RF transistor, mounted in a hermetically sealed package, designed for high frequency amplifier and non-saturated switching	Original	CM5160 CM5160 2N5160. 200MHz 18-November 2N5160 equivalent 2n5160 TRANSISTOR REPLACEMENT high frequency silicon transistor TO-39 CASE	PDF
Contextual Info: VfSMAY _ BF569/BF569R ▼ Vishay Telefunken Silicon PNP Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications For selfoscillating RF m ixer stages. Features • High gain •	OCR Scan	BF569/BF569R BF569 BF569R D-74025 20-Jan-99	PDF
transistor BF 509 Abstract: transistor BF 298 bf509 TRANSISTOR bf 297 EE50 to 92 z Kleine Contextual Info: BF 509 Silizium-PNP-HF-Transistor Silicon PNP RF Transistor Anwendungen: Regelbare VHF-Eingangsstufen Applications: Gain controlled VHF input stages Besondere Merkmale: • Hohe Leistungsverstärkung Features: • High p o w e r gain • Kleine Rauschzahlen	OCR Scan		PDF
BF479 Abstract: Transistor BF 479 Mischstufen Transistor BF 479 t pnp rf transistor rcbo S55A TRANSISTOR BF479 CJCO Contextual Info: Silizium-PNP-HF-Transistor Silicon PNP RF Transistor Anwendungen: UHF/VHF-Hochstrom -Eingangs- und M ischslufen Applications: UHF/VHF-high current input and m ixer stages Besondere Merkmale: Features: • Hohe Kreuzm odulationsfestigkeit • • Hohe Verstärkung	OCR Scan		PDF
AFY16 Abstract: Germanium Transistor 71lb 21b22 Contextual Info: AFY16 PNP Transistor for RF-application up to 900 MHz The A FY 16 is a germanium PNP RF mesa transistor in a case 18 A 4 DIN 41 876 TO-72 . The terminals are electrically insulated from the case. The AFY 16 is designed for use in pre-stages as well as in mixer and oscillator stages up to 900 MHz.	OCR Scan	AFY16 AFY16 18A4DIN41876 Q60106 f-200 Germanium Transistor 71lb 21b22	PDF
k 3436 transistor Abstract: BFQ51 lc 945 transistor 918 TRANSISTOR PNP BFR90A transistor 3746 Contextual Info: Philips Semiconductors Product specification T ^ 3 !- /7 PNP 5 GHz wideband transistor PHILIPS BFQ51 INTERNATIONAL DESCRIPTION PNP transistor in a plastic SOT37 envelope. It is primarily intended for use in RF amplifiers such as in aerial amplifiers, radar systems,	OCR Scan	BFQ51 711002b 00454L BFR90A. k 3436 transistor BFQ51 lc 945 transistor 918 TRANSISTOR PNP BFR90A transistor 3746	PDF
MPSH54 Abstract: MPS-H54 455 khz filter MPSH04 MPS-H55 MPSH55 equivalent MPS-H04 MPS-H05 AM radio MPSH05 Contextual Info: MPS-H54 silicon MPS-H55 PNP SILICON TRANSISTORS PNP SILICON ANNULAR TRANSISTORS . . . MPS-H54 is designed for RF am plifier applications in AM receivers. . . . MPS-H55 is designed for mixer, oscillator, autodyne converter, and IF am plifier applications in AM receivers.	OCR Scan	MPS-H54 MPS-H55 MPS-H54 MPS-H55 15/imhos MPS-H04, MPS-H05 MPS-H54, MPSH54 455 khz filter MPSH04 MPSH55 equivalent MPS-H04 MPS-H05 AM radio MPSH05	PDF

transistor KSA Abstract: AF109R Contextual Info: ESC D • flEBShOS 0ÛÛ4G53 0 « S I E G A F 109 R PNP Germanium RF Transistor SIEMENS AKT IE Nû ES EL LSC H AF 04053 D - T - 3 /'0 ~ 7 for A G C input stages up to 260 MHz AF 109 R is a germanium PNP RF mesa transistor in TO 72 case 18 A 4 DIN 41876 .	OCR Scan	Q60106-X109-R1 Q004QS? AF109R transistor KSA AF109R	PDF
Germanium power Abstract: pnp germanium transistor AF379 Contextual Info: aSC D • 023SbD5 0QQ4QÔS 5 ■ S I E û T- PNP Germanium RF Transistor Of AF 379 - SIEMENS AKTIENGESELLSCHAF -fo r large sig n a l a p p lic a tio n s up to 9 0 0 M H z A F 379 is a PNP germanium planar RF transistor in 5 0 B 3 DIN 41 867 plastic package	OCR Scan	023SbD5 2701-F72 TartlbS45 voltage11 Germanium power pnp germanium transistor AF379	PDF
AF279 Abstract: tfk transistor germanium-pnp-mesa-hf-transistor AF279 transistor tfk 140 Germanium mesa AF 279 042PF Contextual Info: Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: V orstufen bis 900 MHz Applications: Pre stages up to 900 MHz Besondere Merkmale: Features: • Passivierte O berfläche • • Leistungsverstärkung 16 dB • Power gain 16 dB	OCR Scan		PDF
2N3636 Abstract: 2N3635 2N3637 Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package 2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching and Low Power Amplifier.	Original	2N3635 2N3636 2N3637 2N3635 2N3637 C-120 37Rev260901 2N3636	PDF
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package 2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching and Low Power Amplifier.	Original	2N3635 2N3636 2N3637 2N3635 2N3637 C-120 37Rev260901	PDF
bfr96 equivalent Abstract: MCE544 bfr96 equivalent TRANSISTORS MC1343 transistor equivalent bfr96 2N5031 equivalent TRANSISTOR PNP 5GHz MRF630 MRF544 microsemi MRF237 Contextual Info: MCE545 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MCE545 is a high breakdown, high gain, discrete PNP silicon bipolar transistor, shipped in waffle pack. ! High Breakdown BVCEO = 70V ! Gold Back Metal	Original	MCE545 Symb333 SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA bfr96 equivalent MCE544 bfr96 equivalent TRANSISTORS MC1343 transistor equivalent bfr96 2N5031 equivalent TRANSISTOR PNP 5GHz MRF630 MRF544 microsemi MRF237	PDF
AF280 Abstract: germanium-pnp-mesa-hf-transistor oszillator Germanium mesa AF 280 042PF Contextual Info: Nicht für Neuentwicklungen Not for new developments AF 280 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Misch- und O szillatorstufen bis 900 MHz Applications: M ixer and oscilla to r stages up to 900 MHz Besondere Merkmale:	OCR Scan		PDF
transistor BR 471 A Abstract: BF471 Contextual Info: 4m> BF 472 'W Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video B-class p o w e r stages in TV-receivers Besondere Merkmale: Features: • Hohe Sperrspannung	OCR Scan	N125A 627/1177A2 transistor BR 471 A BF471	PDF
BF679 Abstract: BF679S bf 679 Contextual Info: BF 679 S Silizium-PNP-HF-Transistoren Silicon PNP RF Transistors Anwendungen: R egelbare U HF/VH F-Eingangsstufen Applications: G ain controlled UHF/VHF input stages Besondere Merkmale: Features: • Hohe Verstärkung • H igh pow e r gain • Kleine R auschzahlen	OCR Scan	-30dBGpb BF679 BF679S bf 679	PDF
transistor bf 422 Abstract: BF 264 PNP transistor 263 BF 422 Contextual Info: Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video El-class p o w e r stages in TV-receivers Besondere Merkmale: Features: • Kom plem entär zu BF 422	OCR Scan		PDF

PNP RF TRANSISTOR Search Results

PNP RF TRANSISTOR Result Highlights (5)

PNP RF TRANSISTOR Datasheets Context Search

RF TRANSISTOR

2N3553 equivalent

SOT23 W1P NXP

MM4018

2N5160

transistor BF 257

2N5160 equivalent

transistor BF 509

BF479

AFY16

k 3436 transistor

MPSH54

transistor KSA

Germanium power

AF279

2N3636

bfr96 equivalent

AF280

transistor BR 471 A

BF679

transistor bf 422