PNP DATASHEET Search Results

3N121

Abstract: 3n123
Contextual Info: , One, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. OtVICI •CLARITY 3N121 3N123 3N129 3N130 3N131 BVlfO yum NPN PNP PNP PNP PNP 20 25 10 20 30 TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 BVctO r»« (Jol) !(EO Vo« VMIN nA MAX uMAX .VMAX

Contextual Info: SHD419205 PNP SHD419305 NPN SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 647, REV. A Complementary Bi-Polar Power Transistors NPN / PNP Designed for use as high-frequency drivers in audio amplifiers. SHD419205S PNP / SHD419305S (NPN) - S-100 (JANTX) Screening

TOP 948

Abstract: BDS944 BDS946 BDS948 IEC134 MS80 T 948
Contextual Info: Philips Components BDS944/946/948 Datasheet status Product specification date of issue April 1991 PNP Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN PNP silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general

BDS60

Abstract: S80 SMD BDS60A BDS60B BDS60C UBB018 smd npn darlington FAG 29 diode
Contextual Info: Philips Components Datasheet status Product specification date of Issue April 1M1 BDS60/60A/60B/60C PNP Silicon Darlington power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 2 3 4 PNP Silicon power transistors in a

BDS940

Abstract: BOS938 lem HA BDS934 BDS936 BDS938 BDS942 USB002 smd transistors 458
Contextual Info: Philips Component« BDS934/936/938/940/942 Datasheet status Product specification date of Issue April 1991 PNP silicon epitaxial base power transistors PINNING -SOT223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 2 3 4 PNP silicon epitaxial base transistors

Contextual Info: Philips Component* BDV64F/64AF/64BF/64CF Datasheet status Product specification PNP silicon Darlington power transistors date of issue December 1990 PINNING - SOT199 DESCRIPTION PIN 1 2 3 PNP epitaxial base transistors in a m onolithic Darlington circu it fo r

Contextual Info: 2SB1732 / 2SB1709 Datasheet PNP -1.5A -12V Middle Power Transistor lOutline Parameter Value TUMT3 -12V -1.5A VCEO IC TSMT3 Collector Collector Base Base Emitter Emitter 2SB1709 SC-96 2SB1732 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SD2702, 2SD2674

S95 SMD

Abstract: s954 s95A BDS950 BDS952 BDS954 BDS956 BDS95S 1S91
Contextual Info: Philips Components Datasheet status Product specification date of Issue April 1991 BDS950/952/954/956 PNP silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION base collector em itter collector PIN 1 2 3 4 PNP silicon epitaxial base transistors

NPN EBC SOT-23

Abstract: SOT-23 EBC NPN transistor ECB TO-92
Contextual Info: Power Transistor & Small Signal Transistor Power Transistor & Small Signal Transistor MAXIMUM RATINGS NPN BVCEO BVCES IC PC PIN STYLE PNP BVCBO BVCES BVCEV V (V) (A) (W) 123 PJP110A PNP -20 -12 -10 75 BCE TO-220 PJP168A PNP -20 -13 -18 100 BCE TO-220 PJ13003

Contextual Info: EMD29 NPN + PNP Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline <For DTr1(NPN)> Parameter Value VCC 50V 100mA 10kW 10kW IC(MAX.) R1 R2 EMT6 (6) (5) (4) (1) (2) (3) EMD29 (SC-107C) <For DTr2(PNP)> Parameter Value VCC -12V

High voltage fast-switching PNp power transistor

Contextual Info: STN9360 High voltage fast-switching PNP power transistor Datasheet − preliminary data Features • High voltage capability ■ Fast switching speed 4 Applications 2 1 ■ Lighting ■ Switch mode power supply 3 SOT-223 Description This device is a high voltage fast-switching PNP

Contextual Info: EMD30 NPN + PNP Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline <For DTr1(NPN)> Parameter Value VCC 50V 100mA 10kW 10kW IC(MAX.) R1 R2 EMT6 (6) (5) (4) (1) (2) (3) EMD30 (SC-107C) <For DTr2(PNP)> Parameter Value VCC -30V

Contextual Info: EMD30 PNP + NPN Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet Outline <For DTr1(PNP)> Parameter Value VCC 30V 200mA 1k 10k IC(MAX.) R1 R2 EMT6 (6) (5) (4) (1) (2) (3) EMD30 (SC-107C) <For DTr2(NPN)> Parameter Value

Contextual Info: EMD38 NPN + PNP Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline <For DTr1(NPN)> Parameter Value VCC 50V 100mA 10kW 47kW IC(MAX.) R1 R2 EMT6 (6) (5) (4) (1) (2) (3) EMD38 (SC-107C) <For DTr2(PNP)> Parameter Value VCC -50V

STN93

Contextual Info: STN9360 High voltage fast-switching PNP power transistor Datasheet — production data Features • High voltage capability ■ Fast switching speed 4 Applications 1 ■ Lighting ■ Switch mode power supply 2 3 SOT-223 Description This device is a high voltage fast-switching PNP

Contextual Info: EMD29 NPN + PNP Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline <For DTr1(NPN)> Parameter Value VCC 50V 100mA 10kW 10kW IC(MAX.) R1 R2 EMT6 (6) (5) (4) (1) (2) (3) EMD29 (SC-107C) <For DTr2(PNP)> Parameter Value VCC -12V

S46 SMD

Contextual Info: Philips Components BDS 944/946/948 Datasheet status P ro d u ct sp ecification date of issue April 1991 PNP silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PNP silicon epitaxial base transistors in a m iniature SMD envelope SOT223 intended fo r general

MPS650

Abstract: TO-92 CASE CENW650 CENW751 MPS651 MPS750 MPS751 T0237 MPS75
Contextual Info: Datasheet Central Semiconductor Corp. MPS650 MPS651 NPN T0-92 EBC MPS750 MPS751 PNP TO-92 EBC CENW650 CENW651 NPN T0-237 EBC CENW750 CENW751 PNP T0-237 EBC 145 Adams Avenue, Hauppauge, NY 11788 USA COMPLEMENTARY SILICON SMALL Tel: 631 435-1110 • Fax: (631) 435-1824

2N2905

Contextual Info: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V, 0.6 A Datasheet — production data Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics

2N2905At

Contextual Info: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V, 0.6 A Datasheet — production data Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics

TRANSISTOR SMD MARKING CODE DK

Abstract: 301 marking code PNP transistor TRANSISTOR SMD CODE PACKAGE SOT23 501 smd transistor marking DK smd TRANSISTOR code marking pb sot23 transistor marking 44 sot23 339 marking code SMD transistor DK smd code sot23 TRANSISTOR SMD CODE 339 TRANSISTOR SMD MARKING CODE SP
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA143ZT PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 12 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143ZT

SOC3810HRB

Abstract: transistor st 431 SOC38 ESCC SOC3810 2N3810
Contextual Info: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet — production data Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics

2N4406

Abstract: 2N4407
Contextual Info: Datasheet Central 2N4406 2N4407 Sem iconductor Corp. PNP SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4406, 2N4407 types are PNP Silicon Epitaxial Planar Transistors designed

ESCC 5207 005

Abstract: 2N3810HR 2N3810HRG
Contextual Info: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet - production data Features 21 3 4 56 BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor