PNP 2A DPAK Search Results

Contextual Info: SEMICONDUCTOR KTA1040D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. FEATURES ・Low Collector Saturation Voltage : VCE sat =-1.0V(Max.) at IC=-2A, IB=-0.2A. ・Straight Lead (IPAK, "L" Suffix)

Contextual Info: KTA1040D/L SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR TECH NICAL D A T A GENERAL PURPOSE APPLICATION. DPAK FOR SVRFACE MOUNT APPLICATIONS. FEATURES • Low Collector Saturation Voltage : VcE sat =-l-OV(Max.) at IC=-2A, IB=-0.2A. • Straight Lead (IPAK, "L" Suffix)

Contextual Info: SEMICONDUCTOR KTA1040D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. A I C J D FEATURES Low Collector Saturation Voltage B : VCE sat =-1.0V(Max.) at IC=-2A, IB=-0.2A. M K O Complementary to KTC2020D/L.

Contextual Info: SEMICONDUCTOR KTA1040D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SVRFACE MOUNT APPLICATIONS. A I C J D FEATURES ᴌLow Collector Saturation Voltage B : VCE sat =-1.0V(Max.) at IC=-2A, IB=-0.2A. M O K ᴌComplementary to KTC2020D/L.

Contextual Info: SEMICONDUCTOR KTA1040D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SVRFACE MOUNT APPLICATIONS. A I C J D FEATURES Low Collector Saturation Voltage B : VCE sat =-1.0V(Max.) at IC=-2A, IB=-0.2A. M O K Complementary to KTC2020D/L.

TSB1184

Abstract: TO252 18BSC TSB1184CP pnp transistor d 640 transistor B 540
Contextual Info: TSB1184 Low Vcesat PNP Transistor TO-252 DPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -40V BVCEO -30V IC -3A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) -0.3V @ IC / IB = -2A / -100mA (Typ.) Excellent DC current gain characteristics

Contextual Info: TSB1184 Low Vcesat PNP Transistor TO-252 DPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -50V BVCEO -50V IC -3A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) -0.3V @ IC / IB = -2A / -100mA (Typ.) Excellent DC current gain characteristics

CH772GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH772GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. DPAK * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time: tstg= 1.0uSec (typ.)

transistor A08

Abstract: A08 transistor TO252 18BSC TSB1184A TSB1184ACP
Contextual Info: TSB1184A Low Vcesat PNP Transistor TO-252 DPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -50V BVCEO -50V IC -3A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) -0.3V @ IC / IB = -2A / -100mA (Typ.) Excellent DC current gain characteristics

Contextual Info: 2SB1184 PNP PLASTIC ENCAPSULATE TRANSISTORS P b Lead Pb -Free Features: 1.BASE 2.COLLECTOR 3.EMITTER * Low VCE(sat).). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) TO-251 MAXIMUM RATINGS (TA=25ºC unless otherwise noted) Symbol Value Unit Collector-Base Voltage

Contextual Info: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA

Contextual Info: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA

PART NUMBER OF PNP 2A DPAK

Contextual Info: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. 1 FEATURE * Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA

MJD210

Abstract: MJD210L-TN3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJD210 PNP SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS „ 1 DESCRIPTION TO-252 The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. „ FEATURE 1 *Collector-Emitter Sustaining Voltage

PNP 2A DPAK

Abstract: On semiconductor date Code dpak
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CJD110 NPN CJD115 PNP COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS DPAK TO-252 Plastic Package Designed for General Purpose Power and Switching such as Output or Driver stages in Applications such as Switching

PNP 2A DPAK

Abstract: MJD112 MJD117 MJD117 Darlington On semiconductor date Code dpak npn 2A DPAK NPN VCBO 80V
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112 NPN MJD117 PNP DPAK TO-252 Plastic Package Designed for General Purpose Power and Switching Applications

PNP 2A DPAK

Abstract: MJD200 MJD210
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY PLASTIC POWER TRANSISTORS MJD200 NPN MJD210 PNP DPAK TO-252 Plastic Package Designed for Low Voltage, Low Power, High Gain Audio Amplifier Applications

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112 NPN MJD117 PNP DPAK TO-252 Plastic Package Designed for General Purpose Power and Switching Applications

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CJD110 NPN CJD115 PNP COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS DPAK TO-252 Plastic Package Designed for General Purpose Power and Switching such as Output or Driver stages in Applications such as Switching

Contextual Info: UNISONICTECHNOLOGIESCO., LTD MJD210 PNP SILICON TRANSISTOR PN P SI LI CON DPAK FOR SU RFACE M OU N T APPLI CAT I ON S 1 ̈ DESCRI PT I ON TO-252 The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. ̈ FEAT U RE 1 *Collector-Emitter Sustaining Voltage

Contextual Info: MJD117 PNP SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix)

TIP117

Abstract: MJD117
Contextual Info: MJD117 PNP SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I. PACK, “ - I “ Suffix) • Electrically Similar to Popular TIP117

complementary bipolar transistor driver schematic

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN PNP M JD6036 Com plem entary Darlington Power Transistors M JD6039 DPAK For Surface Mount Applications ‘ Motorola Preferred D*vlc» Designed for general purpose power and switching such as output or driver stages

369D

Abstract: j11x
Contextual Info: MJD112 NPN MJD117 (PNP) Preferred Device Complementary Darlington Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters,