PNP 2907A SOT23 Search Results

Contextual Info: SIEMENS SMBT 2907A PNP Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-em itter saturation voltage • C om plem entary type: SM BT 2222A NPN Type Marking Ordering Code Pin Configuration SM BT 2907A s2F Q 68000-A6474

2907A

Abstract: 2907a TRANSISTOR PNP transistor s2f S2F MARKING SOT23 2907a transistor npn 2907A S2F SOT-23 s2F SOT23 PNP 2907a SOT23 Q68000-A6474
Contextual Info: SMBT 2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2222A NPN 2 1 Type Marking Ordering Code Pin Configuration SMBT 2907A s2F 1=B Q68000-A6474 2=E

2907a TRANSISTOR PNP

Abstract: 2907a transistor s2f sot-23 marking 2907A symbol TRANSISTOR S2F
Contextual Info: SIEMENS SMBT 2907A PNP Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: S M B T 2222A NPN Type Marking Ordering Code Pin Configuration S M B T 2907A s2F Q68000-A6474

2907 TRANSISTOR PNP

Abstract: 2907a 2907 2907a transistor 2907a TRANSISTOR PNP npn 2907A TRANSISTOR S2F a 2907 MARKING 2907A transistor 2907
Contextual Info: SMBT 2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2222A NPN 2 1 Type Marking SMBT 2907A s2F Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23

s02907

Contextual Info: r z T SGS-THOMSON Ä 7# MoramiCTiMffloiei S02907 S02907A SMALL SIGNAL PNP TRANSISTORS Type Marking S02907 P05 S O 2907A P03 . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . MEDIUM CURRENT AF AMPLIFICATION

SOT-23 marking p03

Abstract: SO2907 SO2907A npn 2907A 2907AS
Contextual Info: SO2907 SO2907A SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking SO2907 P05 SO 2907A P03 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING NPN COMPLEMENTS ARE RESPECTIVELY

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors MMBT2907LT1 MMBT2907ALT1* COLLECTOR 3 PNP Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2907 2907A Unit Collector – Emitter Voltage VCEO –40 –60

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1G LMBT2907ALT1G S-LMBT2907LT1G S-LMBT2907ALT1G • We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS Rating Symbol Value 2907 2907A –40

LMBT2907ALT1G

Abstract: LMBT2907LT1G 1N916 LMBT2907
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1G LMBT2907ALT1G • We declare that the material of product compliance with RoHS requirements. 3 MAXIMUM RATINGS Rating Symbol Value 2907 2907A –40 –60 V CEO Collector–Base Voltage

2907 TRANSISTOR PNP

Abstract: 1N916 LMBT2907 LMBT2907ALT1 LMBT2907ALT1G LMBT2907LT1 LMBT2907LT1G Lo8.3 LO81
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1 LMBT2907ALT1 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 MAXIMUM RATINGS Rating Symbol Value 2907 2907A Collector–Emitter Voltage V

Contextual Info: MMBT2907 MMBT2907A PNP General Purpose Transistors COLLECTOR 3 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC 2907 -40 2907A -60

MMBT2907

Abstract: MMBT2907A-2F maximum current rating of 2907A pnp transistor MMBT2907A sot-23 15V vebo pnp mmbt2907 2f mmbt2907 2f sot-23
Contextual Info: MMBT2907 MMBT2907A COLLECTOR 3 PNP General Purpose Transistors 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC 2907 -40 2907A -60

Contextual Info: MMBT2907 MMBT2907A PNP General Purpose Transistors COLLECTOR 3 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC 2907 -40 2907A -60

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon 3 COLLECTOR LMBT2907LT1 LMBT2907ALT1 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value 2907 2907A Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO –60 Vdc Emitter–Base Voltage

transistor 2222a

Abstract: transistor 2222a CURRENT GAIN EHN0005 2222a sot23 2222A transistor
Contextual Info: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1 B Q68000-A6481 1=B

CMPT2907A

Contextual Info: Central C M P T 2907A sem ico n d u cto r Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SE M IC O N D U C T O R CMPT2907A type is an PNP silicon transistor manufactu red by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1G LMBT2907ALT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 MAXIMUM RATINGS Rating Symbol Value 2907 2907A –40 –60 V CEO Collector–Base Voltage

transistor 2222a

Abstract: transistor 2222a CURRENT GAIN 2222A transistor 2222a 2907a TRANSISTOR PNP
Contextual Info: SMBT 2222A NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP 2 1 Type Marking SMBT 2222A s1B Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23

T2907A

Contextual Info: M O TO R O LA Order this document by MMBT2907LT1/D SEMICONDUCTOR TECHNICAL DATA M M B T 2907L T 1 M M B T2907A LT1* General Purpose Transistors PNP Silicon C0LLECT0R * Motorola Preferred Device % 2 EMITTER MAXIMUM RATINGS Rating Symbol 2907 2907A Unit Collector-Emitter Voltage

MMBT2907 2F

Contextual Info: M OTO RO LA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon M M B T2 9 0 7 LT1 M M B T 2 9 0 7 A L T 1* C0LLE CT0R 3 'M o to ro la Preferred D evice MAXIM UM RATINGS Rating Symbol 2907 2907A Unit C ollector-E m itter Voltage v CEO -4 0

transistor 3904

Abstract: transistor 2222a transistor 2222a sot 89 sot 23 transistor 70.2 2907a TRANSISTOR PNP pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt transistor A92 SOT 89 3906 npn
Contextual Info: N e w T o T h e 2 3 E D t T i a N - . . c o M Small Signal Transistors High Current NPN and PNP Transistors in an SOT-23 package. These new small signal transistors provide an increased current capability and high hpE- CMPT491E CMPT591E - 1 Amp Low VCE SAT NPN High Current Transistor See page 338.

marking code nt amplifier

Abstract: MARKING 2907A 2907A BF
Contextual Info: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*

transistor c-111

Abstract: TRANSISTOR 111
Contextual Info: PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor Description Features The PN2907A, MMBT2907A, and PZT2907A are 60 V -PNP bipolar transistors designed for use as a genHigh-Current Gain Bandwidth Product fT : eral-purpose amplifier or switch in applications that

PN2907A

Abstract: PN2222A/2907A
Contextual Info: PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor Features Description • High DC Current Gain hFE Range: 100 – 300 The PN2907A, MMBT2907A, and PZT2907A are 60 V -PNP bipolar transistors designed for use as a general-purpose amplifier or switch in applications that