PN323B Search Results

PN323B

Abstract: PNZ323B
Contextual Info: PIN Photodiodes PNZ323B PN323B Silicon planar type For optical control systems Unit: mm 4.6±0.2 Chip Not soldered 1.5 max. (1.0) 5.5±0.2 6.0±0.2 (0.5) 1.5±0.2 22.25±1.0 Ta = 25°C Rating Unit Reverse voltage VR 30 V Power dissipation PD 100 mW Operating ambient temperature

PN323B

Abstract: 970 nm
Contextual Info: Panasonic PIN Photodiodes PN323B PIN Photodiode 4.6+0.2 U nit : mm For optical control systems • Features • F a st resp o n se w hich is w ell suited to high speed m o d u lated light detection : tr, tf = 50 ns typ. • H igh sensitivity, high reliab ility

Contextual Info: PIN Photodiodes PNZ323B PN323B Silicon planar type For optical control systems Unit: mm 4.6±0.2 Chip Not soldered 1.5 max. (1.0) 5.5±0.2 (0.5) 1.5±0.2 (2-0.6±0.1) 22.25±1.0 31.25±1.0 (1.32) Ta = 25°C (1.5) • Absolute Maximum Ratings 6.0±0.2 • Fast response which is well suited to high speed modulated light

PNZ323B application

Abstract: PN323B PNZ323B
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ323B (PN323B) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

PN323B

Abstract: PNZ323B
Contextual Info: PIN Photodiodes PNZ323B PN323B PIN Photodiode Not soldered 1.5 max. 6.0±0.2 7.5±0.2 (2) 5.5±0.2 1.0 For optical control systems Unit : mm 4.6±0.2 2.3 Chip Features 22.25±1.0 High sensitivity, high reliability Peak sensitivity wavelength matched with infrared light emitting

Contextual Info: Panasonic PIN Photodiodes PN323B PIN Photodiode 4.6+0.2 U n it : m m For optical control systems • Features • F a st re sp o n se w hich is w ell suited to h igh speed m o d u lated light d etectio n : tr, tf = 50 ns typ. • H ig h sensitivity, h igh re liab ility

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ323B (PN323B) Silicon planar type For optical control systems Unit: mm 4.6±0.2 Chip Not soldered 1.5 max. (1.0) 5.5±0.2 (0.5) 1.5±0.2 (2-0.6±0.1) 22.25±1.0 31.25±1.0 (1.32)

PN323B

Abstract: PNZ323B
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ323B (PN323B) Silicon planar type For optical control systems • Features  Fast response which is well suited to high speed modulated light detection: tr , tf = 50 ns (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ323B (PN323B) Silicon planar type For optical control systems Unit: mm 4.6±0.2 Chip Not soldered 1.5 max. (1.0) 5.5±0.2 6.0±0.2 (0.5) 1.5±0.2 22.25±1.0 Ta = 25°C Rating

PNA4602M

Abstract: PNA4602 PN323B PNA4601 PNA4601M PNA4608M PNA4610M
Contextual Info: Panasonic Photo IC PNA4601M Series PNA4601 M/4602M/4608M/461 OM Bipolar Integrated Circuit with Photodetection Function For infrared remote control systems • Features • Extension distance is 8 m or more • External parts not required • Adoption o f visible light cutoff resin

PNA4612M00YB

Abstract: PN323B PNA4612M
Contextual Info: 製品規格／Product Specification Prepared by Checked by Approved by 品種名／Type Number：ＰＮＡ４６１２Ｍ００ＹＢ A.Nakano T.Nakagawa S.Nakagawa 種別／Type 増幅機能付シリコンフォトダイオ−ド／Photodiode with Amplifier Functions

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

KB-H-040-02A

Abstract: Ultrasonic transmitter receiver PN323B panasonic confidential flow transmitter specification sheet
Contextual Info: Confidential Until 開発仕様／Tentative Specification Ｄｅｓｉｇｎed by Sheet № 1/6 Approved by Checked by 品種名／Type Number：ＰＮＡ４８６１Ｍ００ＸＡ（仮） 種別／Type 増幅機能付シリコンフォトダイオ－ド／Photodiode with Amplifier Functions

PNA4612M

Abstract: PN323B PNA4611 PNA4611M PNA4613M PNA4614M PNA4620M
Contextual Info: Panasonic Photo IC PNA4611M Series PNA4611M/4612M/4613M/4614M/4620M Bipolar Integrated Circuit with Photodetection Function For infrared remote control systems • Features • • • • High sensitivity (extension distance is 11 m or more) External parts not required

PNA4602M

Contextual Info: Panasonic Photo IC PNA4601M Series PNA4601M/4602M/4608M/461 OM Bipolar Integrated C ircuit with Photodetection Function For infrared remote control systems • Features • Extension distance is 8 m or more • External parts not required • Adoption of visible light cutoff resin

PNA4613M00XD

Abstract: PN323B PNA4613M aeha LTPD-15 iol-400
Contextual Info: 製品規格／Product Specification Prepared by Checked by Approved by 品種名／Type Number：ＰＮＡ４６１３Ｍ００ＸＤ A.Nakano T.Nakagawa S.Nakagawa 種別／Type 増幅機能付シリコンフォトダイオ−ド／Photodiode with Amplifier Functions

uch 11

Abstract: PN323B PNA4611M MATSUA PANASONIC
Contextual Info: 製品規格／Product Specification Prepared by Checked by Approved by 品種名／Type Number：ＰＮＡ４６１１Ｍ００ＹＢ A.Nakano T.Nakagawa S.Nakagawa 種別／Type 増幅機能付シリコンフォトダイオ−ド／Photodiode with Amplifier Functions

1k88

Abstract: PN3634 1R88 6N3P PNA4602M
Contextual Info: I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control II A p tr.tl e min. typ. lyp. typ. ( m A) (nm) (ns) (deg) PN3104 Flat (Clear) PSD 30 2 2 2 940 8 a 65 PN3106(N) Flat (Clear) PSD 30 2 13 940 5 u Flat (Clear) 2 PN3206

PN126S

Abstract: ON1503 PN7103
Contextual Info: Photo Detectors/Photo Couplers • PIN Photodiodes for AF, CD, VD, Optical ■ Phototransistors Communications and Control A p tr.ti II Appli­ Package VB Id min. typ. typ. cations Type No. Construciton No. (V) max. (nA) (nm) (ns) PN312C(N) Flat (Clear) 2 division 037 30 20 10 900 10

PN323B

Abstract: PNA4613M signal detection circuit "peak hold" constant vol 20 kHz ultrasonic transmitter
Contextual Info: 製品規格／Product Specification Prepared by Checked by Approved by 品種名／Type Number：ＰＮＡ４６１３Ｍ００ＹＢ A.Nakano T.Nakagawa S.Nakagawa 種別／Type 増幅機能付シリコンフォトダイオ−ド／Photodiode with Amplifier Functions

PN7103

Abstract: pf204 mr03 C302 C5031 PNA4602M ON1501 PN334 PN106 PNA4602
Contextual Info: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli cations Type No. Flat (Clear) 2 division PF204-3 PN3104 Flat (Clear) PSD PN3106(N) tr.tf typ. (ns) typ 10 PF004-5 22 940 8 Flat (Clear) PSD

bt35f

Abstract: mf03 c PNA4602M
Contextual Info: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli­ cations Type No. PN334 Flat (Clear) 2 division Flat (Clear) PSD Flat (Clear) PSD Flat (Clear) 2 division Flat (Viable light cut) 2 division