PN202S
Abstract: PNZ202S L10324
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNZ202S (PN202S) Silicon planar type Unit: mm φ3.0±0.2 • Features 12.5 min. ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNZ202S (PN202S) Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. M Di ain sc te on na tin nc ue e/ d • Darlington output, high sensitivity
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Contextual Info: Panasonic Darlington Phototransistors PN202S Darlington Phototransistor For optical control systems • Features • Darlington output, high sensitivity • Easy to combine with red and infrared light emitting diodes • Small size 0 3 ceramic package I Absolute Maximum Ratings (Ta = 25°C)
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Contextual Info: Darlington Phototransistors PNZ202S PN202S Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. • Darlington output, high sensitivity • Easy to combine with red and infrared light emitting diodes • Small size (φ3) ceramic package
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PT1061
Abstract: PT8830 PN20R PN150 PN154 PN168 PN202S PN205 PT46t PT90
Contextual Info: - £ 5r a ft -fr a 1|£ E fix': ’vT - 500 10 - 500 10 - 100 10 //. E min mA mW cnr PN150 & I' PN154 PN 155 0.05 PNI SR - 500 10 0.8 _ 500 10 PN202S 0.2 - PN205 0.2 PN168 % • -¡t Bo % ;sr irar. h, max ß.\ 0.2 V cf. !.V: öü w 11 ? 1 9 ? - X r ,■
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Contextual Info: Darlington Phototransistors PNZ202S PN202S Silicon planar type Unit: mm φ3.0±0.2 4.1±0.3 • Features 12.5 min. • Darlington output, high sensitivity • Easy to combine with red and infrared light emitting diodes • Small size (φ3) ceramic package
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PN202S
Abstract: PNZ202S
Contextual Info: Darlington Phototransistors PNZ202S PN202S Darlington Phototransistor Unit : mm ø3.0±0.2 4.1±0.3 2.0±0.2 For optical control systems Features Darlington output, high sensitivity Easy to combine with red and infrared light emitting diodes 12.5 min. Small size (ø 3) ceramic package
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DARLINGTON phototransistor 14
Abstract: PN202S vv50
Contextual Info: Panasonic Darlington Phototransistors PN202S Darlington Phototransistor For optical control systems • Features • Darlington output, high sensitivity • Easy to combine with red and infrared light emitting diodes • Small size 0 3 ceramic package I Absolute Maximum Ratings (Ta=
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pn202s\/ju-70vivi40/\aa\\\20+2darlington phototransistor 14vv50
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNZ202S (PN202S) Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. • Darlington output, high sensitivity • Easy to combine with red and infrared light emitting diodes
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNZ202S (PN202S) Silicon planar type Unit: mm φ3.0±0.2 4.1±0.3 M Di ain sc te on na tin nc ue e/ d • Features 2.0±0.2 For optical control systems 12.5 min. • Darlington output, high sensitivity
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PN202
Abstract: PN202S PNZ202S
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNZ202S (PN202S) Silicon planar type Unit: mm φ3.0±0.2 4.1±0.3 • Features 12.5 min. • Darlington output, high sensitivity • Easy to combine with red and infrared light emitting diodes
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PN202S
Abstract: ELE Panasonic 72C09897
Contextual Info: PANASONIC INDL/ELEK-CSEMI} 7SC D | b c]35flS4 ODDTflìt. 4 T ~ 6932852 PANASONIC IN DL ,E LE CT RO NIC ““ 72C 09896 PN 150 7 r 7 h II X 7 h Q - H " k> ( PN 150 '> i zi > NPN Th: h h -7 > ^ $ / S i NPN Phototransistor Optical Control Systems • ^ /F e a tu re s
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transistor 30021
Abstract: PNA4602M
Contextual Info: Photo Detectors/Photo S3 • PIN Photodiodes for AF, CD, VD, Optical Communications, Control and Space Transmission Flat (Clear) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) PSD Flat (Visible light
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PN126S
Abstract: ON1503 PN7103
Contextual Info: Photo Detectors/Photo Couplers • PIN Photodiodes for AF, CD, VD, Optical ■ Phototransistors Communications and Control A p tr.ti II Appli Package VB Id min. typ. typ. cations Type No. Construciton No. (V) max. (nA) (nm) (ns) PN312C(N) Flat (Clear) 2 division 037 30 20 10 900 10
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PN7103
Abstract: pf204 mr03 C302 C5031 PNA4602M ON1501 PN334 PN106 PNA4602
Contextual Info: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli cations Type No. Flat (Clear) 2 division PF204-3 PN3104 Flat (Clear) PSD PN3106(N) tr.tf typ. (ns) typ 10 PF004-5 22 940 8 Flat (Clear) PSD
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bt35f
Abstract: mf03 c PNA4602M
Contextual Info: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli cations Type No. PN334 Flat (Clear) 2 division Flat (Clear) PSD Flat (Clear) PSD Flat (Clear) 2 division Flat (Viable light cut) 2 division
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pn312epn3104pn3106pn3206+9pn312dpn322dpn3105pn3112pn3108pn3107bt35fmf03 cpna4602m
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PNZ335
Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Contextual Info: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)
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