PN20 Search Results

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Abstract: PN208
Contextual Info: Panasonic Darlington Phototransistors PN208 Darlington Phototransistor For optical control systems • Features • D a rlin g to n output, high sensitivity • E asy to co m b in e lig h t em issio n and p h o to d ete ctio n on sam e prin ted c irc u it b oard

MMBT201

Contextual Info: NATL SEMICGND DISCRETE H E D I bSD113D □ U3V d J. d U | • o National Semiconductor * Z IO T-2 7-/3 3 to o MMBT201 PN201 TUG/10100-5 PNP General Purpose Amplifier . Electrical Characteristics Ta = 25°C unless otherwise noted Min Parameter Symbol Max Units

pnp pn100 transistor

Abstract: PN100 TRANSISTOR transistor pn100 pn200 PN100 PN100A PN200A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package EB C COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

BCxxx TRANSISTOR

Contextual Info: PN4249 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N3702

Abstract: PN200
Contextual Info: 2N3702 2N3702 B C TO-92 E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* Symbol

pn200

Abstract: PN100 PN100A PN200A pnp pn100 transistor transistor pn100
Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package EB C COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

Contextual Info: SEM ICONDUCTOR ¡m PN4250A PNP General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum RâtinÇjS

2N3702

Abstract: 2N3702PNP
Contextual Info: SEMICONDUCTOR 2N3702 PNP General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol

2N3703

Abstract: PN200
Contextual Info: 2N3703 E TO-92 CB PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N3702

Abstract: data sheet 2N3702 2n3702 fairchild pnp general purpose amplifier pn200
Contextual Info: 2N3702 E TO-92 CB PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: BC213L BC213L PNP General Purpose Amplifier • This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. • Sourced from process 68. • See PN200 for Characteristics. TO-92 1 1. Emitter 2. Collector 3. Base

PN205

Abstract: PNA2602
Contextual Info: Darlington Phototransistors PNA2602 PN205 Darlington Phototransistor Unit : mm For optical control systems 4.2±0.3 2.3 1.9 4.5±0.3 4.8±0.3 2.4 2.4 Not soldered ø3.5±0.2 Features 2.8 1.8 1.0 Darlington output, high sensitivity 12.8 min. 10.0 min. Easy to combine light emission and photodetection on same

PN202S

Abstract: PNZ202S L10324
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNZ202S (PN202S) Silicon planar type Unit: mm φ3.0±0.2 • Features 12.5 min. ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

PN200

Abstract: PN4250A
Contextual Info: S E M I C O N D U C T O R ¡m PN4250A PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Màximum RStinQS

PN200

Abstract: PN4249
Contextual Info: SEMICONDUCTOR PN4249 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Màximum RStinQS TA = 2 5 ° C unless o th e rw ise noted

PNP 3-224

Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
Contextual Info: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11

PN207

Abstract: PNA2W01M
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNA2W01M (PN207) Silicon planar type For optical control systems • Features  High sensitivity  Easy to combine with red and infrared light emitting diodes  Small size designed for easier mounting to printed circuit board

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNZ202S (PN202S) Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. M Di ain sc te on na tin nc ue e/ d • Darlington output, high sensitivity

Contextual Info: S3 EE M d LJ Cy1~C3 i 2N3703 . EV . * T O -9 2 CB PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum RatinQS

Contextual Info: SEM ICONDUCTOR > :m PN5134 . ;^C* C< \ TO-92 Be PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum RatinQS

PN2222N

Abstract: CBVK741B019 F63TNR MPS6523 PN200
Contextual Info: MPS6523 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MMBT200

Abstract: MMBT200A PN200 PN200A T092
Contextual Info: . D iscrete P O W E R & S ig n a l Technologies S e m i c o n d u c t o r ,M I MMBT200 PN200 PN200A / PN200A I MMBT200A MMBT200 MMBT200A S O T -2 3 Mark: N2 I N2A PNP General Purpose Amplifier This device is designed fo r general purpose amplifier applications

Contextual Info: Panasonic Darlington Phototransistors PN202S Darlington Phototransistor For optical control systems • Features • Darlington output, high sensitivity • Easy to combine with red and infrared light emitting diodes • Small size 0 3 ceramic package I Absolute Maximum Ratings (Ta = 25°C)

PS6523

Contextual Info: S E M IC O N D U C T O R MPS6523 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. AbSOlUtG Maximum RâtinÇjS