SOT23 MARK Y3
Abstract: NPN Transistor PN100A PN100A
Contextual Info: PN100 / MMBT100 / PN100A / MMBT100A PN100 PN100A MMBT100 MMBT100A C E C B TO-92 SOT-23 E B Mark: NA / NA1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10.
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NPN Transistor PN100A
Abstract: CBVK741B019 F63TNR MMBT100 MMBT100A PN100 PN100A PN2222N PN100 TRANSISTOR
Contextual Info: PN100 / MMBT100 / PN100A / MMBT100A PN100 PN100A MMBT100 MMBT100A C E C B TO-92 SOT-23 E B Mark: NA / NA1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10.
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pn100mmbt100pn100ammbt100a+6ot-23npn transistor pn100acbvk741b019f63tnrpn2222npn100 transistor
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PNP 3-224
Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
Contextual Info: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11
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pn100pn100ammbt100mmbt100a+16pn200pn200ammbt200mmbt200afpn330fpn330apnp 3-224npn transistor pn100a2n3906 darlington transistor2n3904 transistor pnppnp 2n3904transistor 31822n3906 npn transistorpnp switching transistor 2n3906transistor 338tn6715a
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pnp pn100 transistor
Abstract: PN100 TRANSISTOR transistor pn100 pn200 PN100 PN100A PN200A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package EB C COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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pn200pn200apn100pn100a+5c-120rev270302dpnp pn100 transistorpn100 transistortransistor pn100
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pn200
Abstract: PN100 PN100A PN200A pnp pn100 transistor transistor pn100
Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package EB C COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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qsc/l-000019pn200pn200apn100+5pn100ac-120rev270302dpnp pn100 transistortransistor pn100
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Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package EB C COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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2N3704
Abstract: equivalent transistor 2n3704 F63TNR PN100 PN2222N CBVK741B019 2N3704 circuit
Contextual Info: 2N3704 2N3704 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol
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2n3704pn100equivalent transistor 2n3704f63tnr+3pn2222ncbvk741b0192n3704 circuit
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Contextual Info: 2N5172 2N5172 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol
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2N3859A
Abstract: PN100
Contextual Info: 2N3859A 2N3859A NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base
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Contextual Info: 2N3859A 2N3859A NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base
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2N3704
Abstract: equivalent transistor 2n3704 PN100 2N3704 circuit
Contextual Info: 2N3704 2N3704 NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base
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2n3704300mapn100equivalent transistor 2n3704+12n3704 circuit
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MPS8098
Abstract: CBVK741B019 F63TNR PN100 PN2222N
Contextual Info: MPS8098 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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PN3565
Abstract: CBVK741B019 F63TNR PN100 PN2222N
Contextual Info: PN3565 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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PN3643
Abstract: CBVK741B019 F63TNR PN100 PN2222N
Contextual Info: PN3643 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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PN4141
Abstract: CBVK741B019 F63TNR PN100 PN2222N TO-92 Package Dimensions
Contextual Info: PN4141 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N3859A
Abstract: 2N3859 F63TNR PN100 PN2222N CBVK741B019
Contextual Info: 2N3859A E TO-92 CB NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5172
Abstract: CBVK741B019 F63TNR PN100 PN2222N 2n5172 transistor
Contextual Info: 2N5172 2N5172 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol
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2N3704
Contextual Info: 2N3704 2N3704 NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base
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transistor BC 157
Abstract: TIS97 CBVK741B019 F63TNR PN100 PN2222N
Contextual Info: TIS97 E TO-92 BC NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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BF208
Abstract: 8K*8 sram 70V7278 70V7288 70V7339 70V7519 70V7599 AN-306 5646 BC256
Contextual Info: BANK-SWITCHABLE APPLICATION DUAL-PORTS' NOTE FREQUENTLY ASKED QUESTIONS AN-306 What is a bank-switchable dualport? A bank-switchable dual-port or BSDP is an innovative multi-port memory solution that allows simultaneous access to common memory from two separate ports at
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an-306bf-208bc256dr-208+8bf2088k*8 sram70v727870v728870v733970v751970v75995646
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2N2210
Abstract: TIS92 TN2218A transistor 2N2210 2N3827 PN3694 TIS90 2N2270 2N2586 2N5962
Contextual Info: NATL SEMICOND DISCRETE 5SE D • bS01130 D037774 7 ■ NPN General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Vcbo (V) Min Min Min Max (mA/V) PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 40 40 40 40 40 40 50 40 40 100 100 100 250 40 100 200 300
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bs01130d037774pn5816tis90+12tis92tis97tn2218ao-237tn2219a2n2210transistor 2n22102n3827pn36942n22702n25862n5962
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TIS90
Abstract: MPS6566 TIS97
Contextual Info: NATL SEMICOND DISCRETE 22E D • bS01130 D03777M 7 ■ NPN General Purpose Transistors by Ascending Vceo (continued) • H,e Ft (MHz) Min Vceo (V) VCbo(V) Min Min Min Max (mA/V) PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 40 40 40 40 40 40 50 40 40 100 100
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transistor 2N3563
Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
Contextual Info: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .
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transistor 2n35632n3819 cross reference2sk302sa726+62sk41e2sc1026transistor 2sc14172sa10262sc2259bc150 transistor
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BC548
Abstract: BC338 BC338-16 BC338-25 BC338-40 BC368 BC547C BC548A BC548B BC548C
Contextual Info: Small Signal General Purpose Transistors Part No. and Polarity NPN BC547C BC548A BC548B BC548C BC338 BC338-16 BC338-25 BC338-40 BC368 MPS8099 KSP8099 MPSA06 KSP06 MPS8098 KSP8098 MPSA05 KSP05 MPS6602 MPS2222A KSP2222A MPS6513 MPSA10 MPSA20 MPS2222 KSP2222
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