PJP7 Search Results

F730

Abstract: P730
Contextual Info: PJP730 / PJF730 TO-220AB / ITO-220AB 400V N-Channel Enhancement Mode MOSFET FEATURES • 5.5A , 400V, RDS ON =0.95Ω@VGS=10V, ID=3.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

p75n06

Abstract: 30a13 transistor p75n06 PJP75N06 30a13m
Contextual Info: PJP75N06 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=13mΩ • RDS(ON), VGS@4.5V,IDS@30A=18mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls

p75n75

Contextual Info: PJP75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=11mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current

PU10

Abstract: 15VPCU PJP7 MAX8734
Contextual Info: 5 4 3 S5 D PJ7 Power Jack VA 19V PQ9 PU15 MAX8734 VIN(19V) 2 S4(RVCC_ON) S3(SUS_ON) S0(MAIN_ON) 5VPCU PQ51 5VPCU PD23/ PD22 PQ52 MABT+ C PQ10 VCC5 D 5VSUS 15VPCU 3VPCU PJP7 Batt Jack 1 PQ53 VIN(19V) PQ56 3VPCU 3VPCU PQ59 3VPCU PU12 VCC3 3VSUS RVCC3 RVCC1.8

P7NA60

Contextual Info: PPJU7NA60 / PJP7NA60 / PJF7NA60 / PJD7NA60 600V N-Channel MOSFET 600 V Voltage 7A Current Features  RDS ON , VGS@10V,ID@3.5A<1.2Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.

p75n75

Abstract: PJP75N75
Contextual Info: PJP75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=12mΩ • RDS(ON), VGS@4.5V,IDS@30A=18mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls

p75n75

Abstract: PJP75N75
Contextual Info: PJP75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=11mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current

P75N75

Abstract: PJP75N75
Contextual Info: PJP75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=11mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current

p7n60

Abstract: F7N60 m2828 n60p ga 132
Contextual Info: PJP7N60 / PJF7N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 7A , 600V, RDS ON =1.2Ω@VGS=10V, ID=3.5A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

Contextual Info: PPJU7NA65 / PJP7NA65 / PJF7NA65 / PJD7NA65 650V N-Channel MOSFET 650 V Voltage 7A Current Features  RDS ON , VGS@10V,ID@3.5A<1.5Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.

p75n75

Abstract: IDS-30
Contextual Info: PJP75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=11mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current

F7N65

Abstract: P7N65 7N65 m2828
Contextual Info: PJP7N65 / PJF7N65 TO-220AB / ITO-220AB 650V N-Channel Enhancement Mode MOSFET FEATURES • 7A , 650V, RDS ON =1.4Ω@VGS=10V, ID=3.5A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

ALNUP+161609

Contextual Info: HAMMOND MANUFACTURING CO. INC. 475 Cayuga Rd., Suite 100 Cheektowaga, NY 14225 Tel: 716 630-7030 Fax: (716) 630-7042 www.hammondmfg.com Manufacturer’s Suggested U.S. Resale Pricing Transformers & Inductors Small Enclosures Outlet Strips Electrical Enclosures

cbb22

Contextual Info: HAMMOND MANUFACTURING CO. LTD. 394 Edinburgh Road North Guelph, Ontario N1H 1E5 Tel: 519 822-2960 Fax: (519) 822-0715 www.hammondmfg.com Manufacturer’s Suggested Canadian Resale Pricing Transformers & Inductors Small Enclosures Outlet Strips Electrical Enclosures

sis963l

Abstract: 255KI1 IT8510E 11z2103 7CN16 and pin diagram of MMC 4017 u28 sensor hall pin diagram AMD mobile sempron 80-UG5020-00A UG5001
Contextual Info: 5 4 3 C B A 1 255KIX REV:01 255 / 259KIX D 2 01 COVER PAGE 02 GPIO DEFINITION & POWER CONSUMPTION 03 BLOCK DIAGRAM 04 CPU-ATHLON64-HT 05 CPU-ATHLON64-DDR 06 CPU-ATHLON64-PWR & GND 07 MAIN CLOCK & PCB HOLE 08 DDR CONN 09 DDR PULL UP TERMINATION 10 SIS760 HOST& AGP BUS

kb926

Abstract: kb925 FBMA-L11-201209-221LMA30T compal Compal Electronics foxconn Compal Merom RT8203 mobile 478 SOCKET PIN VSS256
Contextual Info: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile Merom uFCPGA with Satna Rosa Platform 3 3 2007-07-24 REV:0.3 4 Compal Secret Data 2006/07/26 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

MCP67MV

Abstract: RTS5117 MCP67MV- A2 12VSUS IT8511TE D1703 D1804 D1803 asus F9DC
Contextual Info: 5 4 3 2 1 F9DC BLOCK DIAGRAM THERMAL SENSOR G781 BATTERY TYPE Page 5 D D 3S1P 3S2P FAN CTRL Page 5 AC & BAT CON Page 47 CPU S1g1 GDDR2 16Mx16 x4 DDR2 16M*16-2.5 1.8V Page42 INFINEON DDR2 SDRAM 667MHz Page2,3,4 DDR2 667 SODIMM X2 +1.8V +0.9VS Page11,12,13

foxconn

Abstract: compal Compal Electronics BT122 DJ1U
Contextual Info: A B C D E F G H I J 1 1 2 2 3 3 LA-1511 REV1.0 Schematics Document uFCBGA/uFCPGA Northwood with Brookdale chipset 845MP+ICH3-M 4 5 4 5 6 6 BOM 記號 7 7 8 Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS,INC. AND CONTAINS CONFIDENTIAL

foxconn

Abstract: 1000P-0402 LA-1452 RTL8101L C267 G2R-117 C612 Socket AM2 BDW00 PCI 1520
Contextual Info: A B C D E 1 1 Compal confidential 2 2 Schematics Document ClawHammer AMD K8 with nVIDIA Chrush K8 3 3 2003-10-15 REV:0.5 4 4 Compal Electronics, Inc. Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

KB3910

Abstract: DCL51 LA-1881 LA1881REV foxconn Compal Electronics BGA421 RTL8101L compal RT810
Contextual Info: A B C D E 1 1 Compal Confidential 2 2 DCL51 Schematics Document Banias uFCBGA/uFCPGA Package with Montara-GM Core Logic 2003-06-12 3 3 REV: 1.0 4 4 Compal Electronics, Inc. Title SCHEMATIC M/B LA-1881 THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

ST DB3 C702

Abstract: SIS 648 Z1212 SiS648 QT1608RL600 755SA1 z1175 Z1155 ATC93LC46 st DB3 c130
Contextual Info: 5 4 3 2 CPU 755SA5 BLOCK DIAGRAM +3V Pentium 4 Socket 478 CPUCLK CPUCLK# 100/133/200MHZ 1 EC THERMAL Vcore ADM1032 Page 3 Page 3 HOST BUS D 100/133/166MHZ 755SA1 P/N: DDRCLK0 DDRCLK1 DDRCLK2 DDRCLK0# DDRCLK1# DDRCLK2# DDR 2 +2.5V DDRCLK0 DDRCLK1 DDRCLK2 DDR RAM BUS

socket lan

Abstract: compal LA-1701 foxconn 8139CL murata flyback CRT pr261 LA-1701 Compal Electronics ADP3205 ADP3415
Contextual Info: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile Banias uFCBGA/uFCPGA with Intel ODEM_MCH+ICH4-M core logic 2003-05-12 3 3 REV:1.0 4 4 Compal Electronics, Inc. Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

rqw200n03

Abstract: 37GL53010-C1 L50RIO ITE8512E RQW200 L53II6 pll gl960 gl960 HCB1608KF-600T30 rqw130
Contextual Info: 5 Model : L53II6 4 3 2 1 PCB P/N:37GL53010-C1 PCBA P/N:82GL53080-C1F D D Intel Merom CPU + GL960 + ICH8-M Chipset C B A PG01 PG02 PG03 PG04 PG05 PG06 PG07 PG08 PG09 PG10 PG11 PG12 PG13 PG14 PG15 PG16 PG17 PG18 PG19 INDEX SYSTEM BLOCK DIAGRAM POWER DIAGRAM & SEQUENCE

Compal Electronics

Abstract: compal smd sot23-3 W32 UFCBGA479 compal la LA-3342P DIODE T25-4 PLC1045P R3381 PR210
Contextual Info: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile Yonah uFCPGA with Intel Calistoga_GM/PM+ICH7-M core logic 3 3 2006-07-24 REV:1.0 4 4 Compal Secret Data Security Classification 2005/03/10 Issued Date 2006/03/10 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL