PJ 72 Search Results

pj diode

Abstract: Diode marking code PJ PJ 75 pj 50 diode marking code pj diode pj marking code pj diode
Contextual Info: BAW56WS HIGH-SPEED SWITCHING DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PJ Top View Marking Code: "PJ" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VRRM 85 V Reverse Voltage VR 75 V Continuous Forward Current

diode pj

Abstract: pj 50 diode marking code pj BAW56WS PJ diode marking code pj diode PJ 75 MM diode
Contextual Info: BAW56WS HIGH-SPEED SWITCHING DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PJ Top View Marking Code: "PJ" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VRRM 85 V Reverse Voltage VR 75 V Continuous Forward Current

CODE PJ

Abstract: marking code pj diode pj BAW56WS PJ diode pj 50 diode marking code pj diode
Contextual Info: BAW56WS HIGH-SPEED SWITCHING DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PJ Top View Marking Code: "PJ" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VR 75 V VRRM 85 V IF 125 mA Repetitive Peak Forward Current

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PS Miniature Sized, Low Impedance, For Switching Power Supplies series Through 100V only Wide temperature range type, miniature sized. Compliant to the RoHS directive (2002/95/EC). PJ Smaller PS TS Long Life Specifications

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PS Miniature Sized, Low Impedance, For Switching Power Supplies series Through 100V only Wide temperature range type, miniature sized. Adapted to the RoHS directive (2002/95/EC). PJ Smaller PS Specifications Performance Characteristics

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PS Miniature Sized, Low Impedance, For Switching Power Supplies series Through 100V only Wide temperature range type, miniature sized. Compliant to the RoHS directive (2002/95/EC). PJ Smaller PS TS Long Life Specifications

Contextual Info: Model 4280 and 4280N WE=310 PJ-051 To Bantam Miniature Phone Plug Pomona FEATURES: • Shielded cable to reduce noise • WE-310 and Bantam Plugs molded to the cable for optimum durability MATERIALS: Plugs – (4280) Brass, unplated (4280N) Brass, nickel plated

28PJ28-210

Abstract: 180w 155pj28-350 155PJ24-350 94A85 155PJ15-250 34VDC natel
Contextual Info: PJ-PAK1 DC/DC Converters Specifications DC Input: DC Input Continued Temperature Coefficient: 0.008%/°C Initial setting: (Max) ± 1 % Trim Range: ± 1 0 % (2.6 VDC unit, +10,-0%) 100-200VDC for 155PJ-PAK 20 - 36VDC for 28PJ-PAK (See derating with temperature)

1850 0062

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below . Capacitance ranges available based on the numerical values in E12 series under JIS.

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below . Capacitance ranges available based on the numerical values in E12 series under JIS.

Contextual Info: Pj SEMTECH April 13, 1998 10.0 AMP POSITIVE VOLTAGE REGULATOR TE L805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com DESCRIPTION FEATURES The EZ1082 series of high performance positive voltage regulators are designed for use in applications requiring low dropout performance at full

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies Approved by Reliability Center for Electronic Component, Japan-Certification No. RCJ-03-23C series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below .

B52 transistor

Contextual Info: Thal mLUM HEWLETT PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features This device is designed for use in low noise, wideband amplifier, • High Output Power: mixer and oscillator applications 21.0 dBm Typical Pj iB at 2.0 GHz

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below . Capacitance ranges available based on the numerical values in E12 series under JIS.

Contextual Info: What HEWLETT 1"KM PACK ARD 3.0 GHz Wideband Silicon RFIC Amplifier Technical Data INA-32063 Features • 17 dB Gain at 1.9 GHz Surface Mount SOT-363 SC-70 Package • +3 dBm Pj dB at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications • LO Buffer and Driver

Contextual Info: W hat HEWLETT« mLMÆ PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical Pj dB at 2.0 GHz 20.5 dBm Typical Pi ¿b at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical Gi ^ at 2.0 GHz

transistor atf

Contextual Info: What H E W L E T T * mLliM PACKARD 2 -1 8 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 Features • Low N oise Figure: 1.1 dB Typical at 12 GHz • High A ssociated Gain: 9.5 dB Typical at 12 GHz • High Output Power: 17.5 dBm Typical Pj ¿b at 12 GHz

Contextual Info: 8 DRAWING HADE IN THJRO ANGLE PROJECTION THIS DRAWING IS UNPUÖLISHEO. COPV*T0HT IS Aftòó— LOC Disr 5066 DF DO CODE RELEASED FOR PUBLICATION ,19 BY AMP fNC0*P0*AT£0. AU. IMfERNAT JQNAL PJÖHrS «£SÉÂVEO. P * JONC / REVISIONS LT« OeSCRIPTiON REV g REDRAWN; ECN 0F-0021 £

Contextual Info: WhatHEWLETT mL'EM P A C K A R D 2 - 1 0 GHz Medium Pow er Gallium Arsenide FE T Technical Data ATF-46101 Features • High Output Power: 27.0 dBm Typical Pj dB at 4 GHz • High Gain a t 1 dB Compression: 12.0 dB Typical Gj ^ at 4 GHz • High Power Efficiency:

F2683

Contextual Info: That HEWLETT mi/LMPACKARD 2-16 GHz General Purpose Gallium Arsenide FET Technical Data A TF-26836 F e a tu r e s D escrip tio n • High Output Power: 18.0 dBm Typical Pj dB at 12 GHz The ATF-26836 is a high perfor­ mance gallium arsenide Schottkybarrier-gate field effect transistor

Diode SJ 56

Abstract: diode sj pj+939+diode
Contextual Info: SK50GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK50GD12T4T .5'( @BVV P WR K =' Q WV SJ XV K @RV K Z BV P =T Q @RV SJ @V _' =' Q BR SJ XV K =' Q WV SJ

Contextual Info: Whol H E W L E T T mLZMPA C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1120 F eatures • High Dynamic Range Cascadable 50 Q or 75 £2 Gain Block • 3 dB Bandwidth: 50 MHz to 1.6 GHz • 17.5 dBm Typical Pj ^ at 0.5 GHz • 12 dB Typical 50 Q Gain at

TH7815AC

Abstract: TH7815 TH7815A 0896B e2v ccd e2v linear ccd pj 71 diode
Contextual Info: TH7815A 50 MHz 4096 Linear CCD Datasheet 1. Features • • • • • • • • Data Rate up to 50 MHz 2 Outputs at 25 MHz Each Pixel Size: 10 µm x 10 µm (10 µm Pitch) 300 to 1100 nm Spectral Range High Sensitivity and Lag Free Photodiodes Very Low Noise (30 pJ/cm2 Noise Equivalent Illumination)

pj 56 diode

Abstract: semikron 3Y diode PJ diode ph9a
Contextual Info: SK100GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK100GD12T4T .5'( @BVV P @BX K =' Q WV SJ @VV K CVV K Z BV P =T Q @RV SJ @V _' =' Q BR SJ @VB K =' Q WV SJ