Spice Model for TMOS Power MOSFETs
Abstract: scr spice model n mosfet depletion pspice model parameters transistor SMD making code 3f MOTOROLA smd SCR 707n AN1043 1E12 ABM11 BUZ103S
Contextual Info: A Hierarchical Cross-Platform Physics Based MOSFET Model for SPICE and SABER By Jon Mark Hancock Siemens Microelectronics ABSTRACT A physics based MOSFET subcircuit model has been developed and implemented for SABER and several SPICE platforms, including PSPICE, IS-SPICE, and S-SPICE. The model is hierarchical in
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XC3195A
Abstract: XC4000XV XILINX XC3195A XC3195A SPEED
Contextual Info: FPGA CUSTOMER SUCCESS STORY XC3195A FPGAs Getting a “Handel” on High Energy Physics A t the KEK High Energy Physics Accelerator Research Organization in Tsukuba, Japan, Dr. Timo Korhonen has been designing and building a large-scale control system for the Accelerator Test Facility. Instead of
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XC3195A
XC4000XV
XILINX XC3195A
XC3195A SPEED
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AN034
Abstract: BA592 INFINEON application note BA595 BAR63 BAR64 RF Semiconductors infineon RF
Contextual Info: Application Note No. 034 Discrete & RF Semiconductors Carrier Lifetime and Forward Resistance in RF PIN-Diodes This abstract summarises the fundamentals of RF PIN Diode physics. General design considerations of PIN Diodes are discussed and a measuring method
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S288P
Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
Contextual Info: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of
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TETRA etch
Abstract: semitool equinox AL 2001 AL-2001 al2001 Electrophoretic Deposition Coating AuSn eutectic ma 150 karl suss PLA-501F Canon PLA-501F
Contextual Info: Copyright Institute of Physics and IOP Publishing Ltd 2003. GaAs IC M ANUFACTURING compoundsemiconductor.net Photoresist application for 3D features on wafer surfaces The increasing use of via holes and other 3D features is posing a challenge to conventional resist
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LED top layer reflector
Abstract: telefunken diodes SI 61 L 565nm led detector 650nm Receivers lattice LM 45 diode SI 61 L telefunken
Contextual Info: Vishay Telefunken Physics of Optoelectronic Devices Light-Emitting Diodes This section deals with the principles and characteristics of the technically most important types of visible emitters which are formed, without special lateral structures, as whole-area emitters.
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AN829 "cross reference"
Abstract: AN-829
Contextual Info: THE PHYSICS OF THE BACKPLANE BUS For high-speed bus signals where the signal rise and fall times are less than the round-trip delay, the bus acts as a transmission line with an associated characteristic impedance and propagation delay whose unloaded values, Zo and
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AN011457-1
an011457
AN829 "cross reference"
AN-829
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Mixer and Detector Diodes
Abstract: X-Band Motion Detector "zero-bias schottky diode" ST Low Forward Voltage Schottky Diode gold metal detectors VF-8Z microwave motion sensors balun diode mixer motion sensor doppler x band diode detector waveguide
Contextual Info: APPLICATION NOTE Mixer and Detector Diodes Surface Barrier Diodes Electrical Characteristics and Physics of Schottky Barriers Most people who use diodes are more familiar with junction devices than with the surface barrier diodes commonly used in mixer and detector circuits. In a junction diode the rectifying
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TLMB100
Abstract: light-sensitive resistor GaAs silicon carbide LED telefunken diodes SI 61 L
Contextual Info: T e m ig TELEFUNKEN Semiconductors Physics of Optoelectronic Devices Light-Emitting Diodes This section deals with the principles and characteristics of the technically most important types of visible emitters which are formed, without special lateral structures, as
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80c85
Abstract: vhdl code for rs422 interface in fpga Fairchild 54ac14 HS26C32 54AC14 seu mongoose 54AC74 seu r6000 processor ad590 application ad590 rad hard
Contextual Info: Adaptive Instrument Module - A Reconfigurable Processor for Spacecraft Applications Richard F. Conde1, Ann Garrison Darrin1, F. Charles Dumont 1, Phil Luers2, Steve Jurczyk3, Dr. Neil Bergmann4 and Dr. Anwar Dawood4 1 The Johns Hopkins University Applied Physics Laboratory, Laurel MD
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XQR4062XL
80c85
vhdl code for rs422 interface in fpga
Fairchild 54ac14
HS26C32
54AC14 seu
mongoose
54AC74 seu
r6000 processor
ad590 application
ad590 rad hard
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OPA03
Abstract: DMILL 65260 npn nv SRAM cross reference SUN SENSOR BGP01 hep 50 hep silicon diode scr spice model SMALL ELECTRONICS PROJECTS
Contextual Info: Atmel is manufacturing the DMILL technology in its Nantes’ factory. Primarily developed to serve the High Energy Physics market, the technology offers versatile components suitable for any advanced mixed or pure digital conception. Taking advantage of SOI use and trench insulators, the SCR structures inherently present in
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Cu6Sn5
Abstract: Cu6Sn5 surface energy sem 2006 IPACK2005
Contextual Info: APPLIED PHYSICS LETTERS 88, 012106 ͑2006͒ Effect of current crowding on void propagation at the interface between intermetallic compound and solder in flip chip solder joints Lingyun Zhang,a͒ Shengquan Ou, Joanne Huang, and K. N. Tu Department of Materials Science and Engineering, University of California, Los Angeles,
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Indium Tac Flux 020
Abstract: CU-106A CU-106A shelf life of BGAS DALE SOMC k type thermocouple utl USR(pet) gold embrittlement
Contextual Info: APPENDIX A Surface Tension and the Self-Centering of BGAs ITS PHYSICS ARE REVIEWED T O G E TH E R W I T H SOLDER TYPE, TEM PERATURE A N D THE PRESENCE OF C O N T A M I N A T E S A N D H O W THEY IN F LU E N C E By Steve G r e a t h o u s e THE S E L F - A L I G N I N G M O V E M E N T OF DEVICES D U R I N G
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flash "high temperature data retention" mechanism
Abstract: Angstrem Hebrew material science and technology 1117 FG 0.18-um CMOS Flash technology DSASW0037374
Contextual Info: SuperFlash Memory Program/Erase Endurance Viktor Markov, Xian Liu, Alexander Kotov, Amitay Levi, Tho Ngoc Dang, and Yuri Tkachev Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, E-mail: akotov@sst.com Abstract––Program/erase endurance data for SuperFlash
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32Kbit
flash "high temperature data retention" mechanism
Angstrem
Hebrew
material science and technology
1117 FG
0.18-um CMOS Flash technology
DSASW0037374
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reliability
Abstract: symposium research paper and gate
Contextual Info: a ADI Reliability Handbook Analog Devices presents many papers on quality and reliability at technical conferences, and publishes articles in many technical journals. Following is a list of some of the papers presented at these conferences. At the 1995 IEEE
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kc 2462
Abstract: ED36 symposium ED-36 gunn diode datasheet Betel d 1878 transistors A102
Contextual Info: ADI Reliability Handbook Table XII. 1200 ؎500 ppm 38 @ 90% C.I. ELFR FIT Rate No Failures Occurred in Other Stress Tests Conducted, e.g., HAST, T/C, etc. The ppm figure obtained in Table XII was at the time of qualification and based on a limited sample size. Recent figures based on statistically valid sample sizes indicate that the ELFR is running at less
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diode EGP 10
Abstract: diode EGP diode gp 421 lcf6
Contextual Info: IEEE 1990 Bipolar Circuits and Technology Meeting 5.2 A NEW PHYSICAL COMPACT MODEL FOR LATERAL PNP TRANSISTORS F.G. O’Hara, J.J.H. van den Biesen, H.C. de Graaff and J.B. Foley.# Philips Research Laboratories P.O. Box 80.000 5600 JA Eindhoven - The Netherlands
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ED-32,
diode EGP 10
diode EGP
diode gp 421
lcf6
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sense amplifier bitline memory device
Abstract: VP12 Intel StrataFlash Memory double data rate Reliability VP12 "vlsi technology" abstract for basic vlsi with intel
Contextual Info: Intel StrataFlashTM Memory Technology Development and Implementation Al Fazio, Flash Technology Development and Manufacturing, Santa Clara, CA. Intel Corp. Mark Bauer, Memory Components Division, Folsom, CA. Intel Corp. Index words: StrataFlash, MLC, flash, memory.
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DMILL
Abstract: RAD HARD TRENCH TRANSISTOR BPSG HEP transistors hep silicon diode 1E14 temic jfet jfet n channel ultra low noise nuclear Neutron Radiation Detector
Contextual Info: 10MRAD Si DMILL Mixed Analog/Digital Radiation Hard BiCMOS An emerging need in HEP MPW The decision to develop new equipment for High Energy Physics (HEP) research has led the need for ultra rad hard technology. The radiation tolerance for detector electronics adjacent to proton collision
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10MRAD
D-85386
I-20157
DMILL
RAD HARD TRENCH TRANSISTOR
BPSG
HEP transistors
hep silicon diode
1E14
temic jfet
jfet n channel ultra low noise
nuclear
Neutron Radiation Detector
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NE213
Abstract: BC501 XC4010E scintillator PLCC84 package transistor BC501 A274 A292 PLCC84 XC4010XL
Contextual Info: NEUTRON SINGLE EVENT UPSETS IN SRAM-BASED FPGAs* Mattias Ohlsson Peter Dyreklev Karin Johansson Ericsson Saab Avionics AB Electromagnetic Technology Division 581 88 Linköping, Sweden and Peter Alfke Xilinx, Inc. 2100 Logic Drive, San Jose CA 95124, USA Abstract
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NE213
BC501
XC4010E
scintillator
PLCC84 package
transistor BC501
A274
A292
PLCC84
XC4010XL
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voltage divider rule
Abstract: "inverting adder" mancini "current divider rule" AN9510 op amp as adder Harris Application Note 9415
Contextual Info: Harris Semiconductor No. AN9510.1 Harris Linear November 1996 Basic Analog for Digital Designers Authors: Ron Mancini and Chris Henningsen What Is This Application Note Trying To Accomplish? There is a long gap between engineering college and mid career in a non-engineering position, but technology
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AN9510
voltage divider rule
"inverting adder"
mancini
"current divider rule"
op amp as adder
Harris Application Note 9415
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SC-15
Abstract: EEPROM flotox Japanese Transistor Cross References
Contextual Info: u these components. In this paper, we will focus on the technology factors by comparing the three dom inant E2 technologies to date, and giving our own viewpoint on the development in the market place. COMPARISON AND TRENDS IN TO DAY’S DOM INANT E2 TECHNOLOGIES
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Recent Study on On-state Breakdown Modeling of pHEMTs
Contextual Info: Recent Study on On-state Breakdown Modeling of pHEMTs Hong Yin, Cejun Wei, Yu Zhu, Alex Klimashov, Dylan Bartle Skyworks Solutions Inc. Woburn, MA 01801 Hong.Yin@skyworksinc.com Abstract—Traditionally, the on-state breakdown of pHEMTs is attributed to impact ionization and thermal breakdown under
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RF transmitter nxp
Abstract: LDMOS Technology for RF Power Amplifiers power amplifier NXP GaN amplifier galliumnitride rf gan amplifier
Contextual Info: NXP GaN technology for RF power Boost efficiency and lower system cost in wireless infrastructure with GaN This new gallium-nitride GaN technology, the result of a collaborative development effort, enables high-power amplifiers that deliver very high efficiency in next-generation wireless
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