PHOTOTRANSISTOR DIE WAFER Search Results

OPTOLAB

Contextual Info: OL 8110 Dual Emitter Phototransistor Mechanical Specifications • • • • Chip size: 508µm x 690 µm +/- 20 µm Chip thickness: 178 µm - 254 µ Active area: 200 µm x 400 µ Back side (collector) gol metalized for conductive epoxy die-attach Electrical Specifications (TA = 25°C)

Contextual Info: T1070P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25 • High photo sensitivity

T1070P

Abstract: FVOV6870 MIL-HDBK-263 81119
Contextual Info: T1070P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25 • High photo sensitivity

T1070P

Abstract: phototransistor visible light FVOV6870 MIL-HDBK-263 touch dimmer IC VISHAY Optoelectronics
Contextual Info: T1070P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25 • High photo sensitivity

Contextual Info: T1070P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25 • High photo sensitivity

Contextual Info: T1070P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25 • High photo sensitivity

Contextual Info: T1070P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25 • High photo sensitivity

FVOV6870

Abstract: MIL-HDBK-263 silicon npn phototransistor phototransistor die
Contextual Info: T5090P Vishay Semiconductors Silicon NPN Phototransistor FEATURES E: emitter • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.185 • High photo sensitivity • High radiant sensitivity E • Suitable for visible and near infrared radiation

Contextual Info: T5096P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES E: emitter • Package type: wafer • Package form: wafer • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.185 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

Contextual Info: T1070P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25

Contextual Info: T1070P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25

Contextual Info: T1070P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25

Contextual Info: T1090P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.53 x 0.53 x 0.185 • High photo sensitivity E • High radiant sensitivity B • Suitable for visible and near infrared radiation

FVOV6870

Abstract: MIL-HDBK-263
Contextual Info: T5090P Vishay Semiconductors Silicon NPN Phototransistor FEATURES E: emitter • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.185 • High photo sensitivity • High radiant sensitivity E • Suitable for visible and near infrared radiation

Contextual Info: T1090P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.53 x 0.53 x 0.185 • High photo sensitivity E • High radiant sensitivity B • Suitable for visible and near infrared radiation

T1090P

Abstract: FVOV6870 MIL-HDBK-263
Contextual Info: T1090P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.53 x 0.53 x 0.185 • High photo sensitivity E • High radiant sensitivity B • Suitable for visible and near infrared radiation

Contextual Info: T1090P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.53 x 0.53 x 0.185 • High photo sensitivity E • High radiant sensitivity B • Suitable for visible and near infrared radiation

Contextual Info:  !" incremental encoder chip 1.2 mm EEEEEEEEEEEEEEEECFCA93298C OIT3C consists in three unique silicon phototransistors. They have a common collector and every emitter is available on a pad. The pitch of the silicon arrays is 1.2 mm, while the component electrical pitch is 1.27 mm.

manufacturing

Abstract: antiparallel scr Optocoupler with triac transistor working principle AG SMD TRANSISTOR OPTOCOUPLER for SCR SCR firing circuit SMD Dual optocoupler hi speed smd
Contextual Info: Manufacturing and Reliability Vishay Semiconductors Manufacturing and Reliability THE IMPORTANCE RELIABILITY OF OPTOCOUPLER Because of the widespread use of optocouplers as an interface device, optocoupler reliability has been of major importance to circuit designers and component engineers.

antiparallel scr

Abstract: optocoupler MTBF phototransistor MTBF dual channel triac optocoupler inverse-parallel scr drive circuit optocoupler RC snubber vishay transistor transistor working principle opto-coupler scr SCR optocoupler
Contextual Info: VISHAY Vishay Semiconductors Manufacturing and Reliability The Importance of Optocoupler Reliability Because of the widespread use of optocouplers as an interface device, optocoupler reliability has been of major importance to circuit designers and components engineers. Published studies of comparative

Infineon moisture sensitive package

Abstract: phototransistor MTBF optocoupler MTBF dual channel opto triac antiparallel scr double channel optocoupler infineon mtbf optocoupler triac infineon transistor working principle mtbf infineon
Contextual Info: Infineon technologies Optocoupler Manufacturing and Reliability The Concern for Optocoupler Reliability Because of the widespread use of optocouplers as an inter­ face device, optocoupler reliability has been a major con­ cern to circuit designers and components engineers. Pub­

Contextual Info: T5096P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor E: emitter FEATURES • Package type: chip • Package form: chip • Dimensions L x W x H in mm : 0.39 x 0.39 x 0.185 • High photo sensitivity • High collector current E • Small size

Contextual Info: T1090P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.53 x 0.53 x 0.185 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

Contextual Info: T5096P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor E: emitter FEATURES • Package type: chip • Package form: chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.185 • High photo sensitivity • High radiant sensitivity E • Suitable for visible and near infrared radiation