T5096P Search Results

Contextual Info: T5096P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor E: emitter FEATURES • Package type: chip • Package form: chip • Dimensions L x W x H in mm : 0.39 x 0.39 x 0.185 • High photo sensitivity • High collector current E • Small size

Contextual Info: T5096P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES E: emitter • Package type: chip • Package form: chip • Dimensions L x W x H in mm : 0.39 x 0.39 x 0.185 • High photo sensitivity • High collector current E • Small size

Contextual Info: T5096P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES E: emitter • Package type: wafer • Package form: wafer • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.185 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

Contextual Info: T5096P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor E: emitter FEATURES • Package type: chip • Package form: chip • Dimensions L x W x H in mm : 0.39 x 0.39 x 0.185 • High photo sensitivity • High collector current E • Small size

Contextual Info: T5096P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor E: emitter FEATURES • Package type: chip • Package form: chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.185 • High photo sensitivity • High radiant sensitivity E • Suitable for visible and near infrared radiation

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Optoelectronics Bare Die Portfolio Infrared Emitters and Photo Detectors TABLE OF CONTENTS Introduction to Bare