PHOTOTRANSISTOR DAYLIGHT Search Results

WPTS-520D

Abstract: uv phototransistor C 520D 520D c 5802 transistor
Contextual Info: Photo Transistor Waitrony Module No.: WPTS-520D 1. General Description: The WPTS-520D is a high sensitivity NPN silicon phototransistor mounted in a 05mm black epoxy resin package. With daylight filter, this phototransistor is only sensitive to infrared rays. This phototransistor

c 5802 transistor

Abstract: IAO5 Waitrony IE-2 WPTS-510D Rise time of photo transistor
Contextual Info: Photo Transistor Waitrony Module No.: WPTS-510D 1. General Description: The WPTS-510D is a high sensitivity NPN silicon phototransistor mounted in a 05mm black epoxy resin package. With daylight filter, this phototransistor is only sensitive to infrared rays. This phototransistor

Infrared Phototransistor

Abstract: "infrared phototransistor" all datasheet phototransistor QEE213 QSE213C QSE214C
Contextual Info: QSE213C/QSE214C Plastic Silicon Infrared Phototransistor Features Description • ■ ■ ■ ■ ■ The QSE213C/QSE214C is a silicon phototransistor encapsulated in a medium angle, infrared transparent, clear thin plastic sidelooker package. NPN Silicon Phototransistor

Infrared Phototransistor

Abstract: QEE213 QSE213 QSE214
Contextual Info: QSE213/QSE214 Plastic Silicon Infrared Phototransistor Features Description • ■ ■ ■ ■ ■ The QSE213/QSE214 is a silicon phototransistor encapsulated in a medium angle, infrared transparent, black thin plastic sidelooker package. NPN Silicon Phototransistor

Contextual Info: QSB363 / QSB363GR / QSB363YR / QSB363ZR Subminiature Plastic Silicon Infrared Phototransistor Features Description • • • • • • • • The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. NPN Silicon Phototransistor

QEB363

Contextual Info: QSB363 Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°

Infrared Phototransistor

Abstract: c 5802 7402 ic configuration QSB363 QEB363 QEB373 IC 7402
Contextual Info: QSB363 Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°

sfh siemens

Abstract: npn phototransistor sfh 309 380nm SFH 309
Contextual Info: SIEMENS NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter SFH 309 SFH 309 F Area not flat 4,5t-” Collector Transistor Cathode (Diode) 'Chip position

Contextual Info: PHOTOTRANSISTOR Part Number: L-3DP3BT Description Features z Mechanically and spectrally matched to the infrared emitting Made with NPN silicon phototransistor chips. LED lamp. z Blue transparent lens. z Daylight filter. z RoHS compliant. Package Dimensions

Infrared Phototransistor

Abstract: "infrared phototransistor" qed12x QED22X
Contextual Info: QSD122, QSD123, QSD124 Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSD122/123/124 is a phototransistor encapsulated in an infrared transparent, black T-1 3/4 package. ■ Package Type: T-1 3/4 ■ Matched Emitter: QED12X/QED22X/QED23X

QRB1113

Abstract: QRB1114 Photo interrupter application notes
Contextual Info: QRB1113/1114 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH PACKAGE DIMENSIONS FEATURES • No contact surface sensing 0.420 10.67 • Phototransistor output 0.328 (8.33) • Focused for sensing specular reflection 0.150 (3.81) NOM PIN 1 • Daylight filter on photosensor

phototransistor 600 nm

Abstract: 305d WPTS-305D Waitrony
Contextual Info: Waitrony Photo Transistor Module No.: WPTS-305D 1. General Description: Dimensions The WPTS-305D is a high sensitivity NPN silicon phototransistor mounted in a compact black epoxy encapsulation. With daylight filter, this phototransistor is only sensitive to

Contextual Info: SIEMENS SFH320 SFH320F DAYLIGHT FILTER NPN Silicon Phototransistor SMT-TOPLED Package Dimensions in Inches mm FEATURES Maximum Ratings * NPN Silicon Phototransistor Operating & Storage Temperature Hop, Tstg) . -5 5 to +100°C Collector-Emitter Voltage (VCE) . 35 V

near IR sensors with daylight filter

Contextual Info: TEST2600 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description TEST2600 is a high sensitive silicon NPN epitaxial planar phototransistor in miniature side view plastic package with cylindrical lens. The integrated Daylight filter is matched to IR emitters, λp=950nm .

near IR sensors with daylight filter

Contextual Info: TEST2600 Vishay Semiconductors Silicon NPN Phototransistor Description TEST2600 is a high sensitive silicon NPN epitaxial planar phototransistor in miniature side view plastic package with cylindrical lens. The integrated Daylight filter is matched to IR emitters, λp = 950 nm .

Contextual Info: TEST2600 Vishay Semiconductors Silicon NPN Phototransistor Description TEST2600 is a high sensitive silicon NPN epitaxial planar phototransistor in miniature side view plastic package with cylindrical lens. The integrated Daylight filter is matched to IR emitters, λp = 950 nm .

f41 marking

Contextual Info: SIEMENS NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter SFH 303 SFH 303 F Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified

Contextual Info: Opto Semiconductors NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter SFH 303 SFH 303 FA 9.0 8.2 B C E 11.5 10.9 0.6 0.4 6.9 0.7 0.4 7.8 7.5 25.2

Contextual Info: SIEMENS SFH320 SFH320F DAYLIGHT FILTER NPN Silicon Phototransistor SMT-TOPLËD FEATURES • NPN Silicon Phototransistor • Daylight Filter C>ption-SFH320F • Suitable for Vapor-Phase Reflow, Infrared Reflow, Wave Solder Processes • Compatible with Automatic Placement

8239

Abstract: Diode IR 8294 Telefunken Phototransistor TEMT1000
Contextual Info: TEMT1000 Vishay Telefunken Silicon NPN Phototransistor Description TEMT1000 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in SMT package with dome lens. Due to its integrated Daylight filter the device is sensitive for IR radiation only.

TEMT7100X01

Abstract: J-STD-020D VSMB1940X01
Contextual Info: TEMT7100X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • • • • • • • • • • • 20043-1 DESCRIPTION • TEMT7100X01 is a silicon NPN epitaxial planar phototransistor with daylight blocking filter in a miniature,

near IR sensors with daylight filter

Contextual Info: TEST2600 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description TEST2600 is a high sensitive silicon NPN epitaxial planar phototransistor in miniature side view plastic package with cylindrical lens. The integrated Daylight filter is matched to IR emitters, λp = 950 nm .

QSB363

Abstract: QEB363 QEB373 "infrared phototransistor"
Contextual Info: QSB363 Subminiature Plastic Silicon Infrared Phototransistor • Daylight Filter ■ Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package

npn phototransistor sfh 309

Abstract: SFH 256 diode p1000 Fototransistor fototransistor led P1000 diode Q62702-P999 transistor 309 Q62702-P1000 Q62702-P174
Contextual Info: SFH 309 SFH 309 F NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter SFH 309 SFH 309 F Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified